IXFX120N20

HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS(on) Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID104 IDM IAR TC TC TC TC 120 76 480 120 A A A A EAR EAS TC = 25°C TC = 25°C 64 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 15 V/ns PD TC = 25°C 560 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.9/6 Nm/b.in. PLUS 247 TO-264 6 10 g g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3mA 200 V VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 PLUS 247TM (IXFX) G (TAB) D TO-264 AA (IXFK) G D G = Gate S = Source (TAB) S D = Drain TAB = Drain Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls ±200 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 17 mΩ Advantages • PLUS 247TM package for clip or spring mounting • Space savings • High power density IXYS reserves the right to change limits, test conditions, and dimensions. © 2002 IXYS All rights reserved 98636-B (9/02) IXFK 120N20 IXFX 120N20 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 40 77 S 9100 pF 2200 pF Crss 1000 pF td(on) 40 ns 65 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), 110 ns 35 ns 300 nC 50 nC 170 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.22 RthCK 0.15 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 120 A ISM Repetitive; pulse width limited by TJM 480 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns trr QRM IF = 50A,-di/dt = 100 A/µs, VR = 100 V 0.8 µC 8 A IRM PLUS247TM (IXFX) Outline Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 TO-264 AA Outline Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 5,187,117 5,237,481 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 5,486,715 5,381,025 6,306,728B1 IXFK 120N20 IXFX 120N20 Fig. 1. Output Characteristics at 25oC Fig. 2. Output Characteristics at 125oC 140 160 VGS = 10V 9V 8V TJ = 25OC 140 7V ID - Amperes ID - Amperes 120 100 80 6V 60 6V 80 60 5V 40 5V 20 0 0.0 0 0.0 0.5 1.0 1.5 2.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Volts VDS - Volts Fig. 3. RDS(ON) vs. Drain Current Fig. 4. RDS(ON) vs. TJ 4.0 3 VGS = 10V VGS = 10V RDS(ON) - Normalized 3.5 RDS(ON) - Normalized 7V 100 40 20 VGS = 10V 9V 8V TJ = 125OC 120 TJ = 125OC 3.0 2.5 2.0 1.5 TJ = 25OC 1.0 0.5 0 ID = 120A 2 ID = 60A 1 0 20 40 60 80 100 120 140 160 180 200 -25 0 25 ID - Amperes 50 75 100 125 150 T J - Degrees C Fig. 5. Drain vs. Case Temperature Fig. 6. Admittance Curves 160 120 140 100 ID - Amperes ID - Amperes 120 100 80 60 80 60 TJ = 125oC 40 TJ = 25oC 40 20 20 0 -50 -25 0 25 50 75 T C - Degrees C © 2002 IXYS All rights reserved 100 125 150 0 3.0 TJ = -40oC 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 IXFK 120N20 IXFX 120N20 Fig. 8. Capacitance Curves Fig. 7. Gate Charge Characteristic Curve 16 20000 14 VDS=100V ID=60A IG=10mA Capacitance - pF VGS - Volts 12 Ciss 10000 10 8 6 4 5000 f = 1 MHz Coss Crss 1000 2 500 0 0 100 200 300 400 500 0 5 10 Gate Charge - nC 15 20 25 30 35 40 VDS - Volts Fig. 9. Source Current vs. Source to Drain Voltage 180 160 ID - Amperes 140 120 100 80 TJ =125OC 60 TJ=25OC 40 20 0 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig. 10. Maximum Thermal Impedance 0.40 R(th)JC - K/W 0.20 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.