IXFX120N30P3

IXFK120N30P3 IXFX120N30P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 300V 120A 27m 250ns RDS(on)  trr  D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = G TO-264 (IXFK) S G D Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 300 300 V V VGSS VGSM Continuous Transient  20  30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 120 300 A A IA EAS TC = 25C TC = 25C 60 3 A J PD TC = 25C 1130 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns -55 ... +150 150 -55 ... +150 C C C S Maximum Ratings TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features   300 260 °C °C 1.13/10 Nm/lb.in  20..120 /4.5..27 N/lb  10 6 g g    Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 5.0 V Applications   TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved 200 nA 25 750 A A 27 m Easy to Mount Space Savings     DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100481B(1/20) IXFK120N30P3 IXFX120N30P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 54 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 90 S 8630 pF 1406 pF 20 pF 1.5  26 ns 13 ns 60 ns 11 ns 150 nC 40 nC 53 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.11C/W RthCS 0.15C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 120 A ISM Repetitive, Pulse Width Limited by TJM 480 A VSD IF = IS , VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 60A, -di/dt = 100A/s 2.2 VR = 100V, VGS = 0V 19.6 250 ns  µC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK120N30P3 IXFX120N30P3 Fig. 1. Output Characteristics @ TJ = 25ºC 120 Fig. 2. Extended Output Characteristics @ TJ = 25ºC 280 VGS = 10V 9V V GS = 10V 9V 240 100 8V 200 I D - Amperes I D - Amperes 80 60 7V 160 8V 120 40 80 7V 20 40 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 0 5 10 20 25 Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 120 3.0 V GS = 10V 8V VGS = 10V 2.6 80 RDS(on) - Normalized 100 I D - Amperes 15 VDS - Volts VDS - Volts 7V 60 40 2.2 I D = 120A 1.8 I D = 60A 1.4 1.0 6V 20 0.6 5V 0 0.2 0 3.4 1 2 3 4 5 6 7 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 140 VGS = 10V 125 150 125 150 120 3.0 100 2.6 TJ = 125ºC I D - Amperes R DS(on) - Normalized -25 VDS - Volts 2.2 1.8 1.4 80 60 40 TJ = 25ºC 1.0 20 0.6 0 0 40 80 120 160 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 200 240 280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK120N30P3 IXFX120N30P3 Fig. 7. Input Admittance 180 160 160 140 Fig. 8. Transconductance TJ = - 40ºC 140 25ºC g f s - Siemens I D - Amperes 120 TJ = 125ºC 25ºC - 40ºC 120 100 80 60 100 125ºC 80 60 40 40 20 20 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 20 40 60 80 VGS - Volts 140 160 180 200 10 VDS = 150V 9 300 I D = 60A 8 250 I G = 10mA 7 VGS - Volts I S - Amperes 120 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 100 I D - Amperes 200 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 40 VSD - Volts Fig. 11. Capacitance 80 100 120 140 160 Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 RDS(on) Limit f = 1 MHz 25µs Ciss 10,000 100 1,000 100µs I D - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs Coss 10 1ms 100 TJ = 150ºC TC = 25ºC Single Pulse Crss 10 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 V DS - Volts 1,000 IXFK120N30P3 IXFX120N30P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_120N30P3(K8) 6-25-12 IXFK120N30P3 IXFX120N30P3 TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C AM b b2 c e = Gate 2,4 = Drain 3 = Source 1 0P1 BACK SIDE A K M D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b e b2 3 PLCS 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK120N30P3 IXFX120N30P3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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