IXFX120N30T

Advance Technical Information IXFK120N30T IXFX120N30T GigaMOSTM Power MOSFET VDSS ID25 = = 300V 120A Ω 24mΩ 200ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 300 300 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 120 330 A A IA EAS TC = 25°C TC = 25°C 30 2.5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 960 W -55 ... +150 150 -55 ... +150 °C °C °C G = Gate S = Source 300 260 °C °C Features 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D (TAB) S PLUS247 (IXFX) (TAB) z z z z z D = Drain TAB = Drain International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 60A, Note 1 TJ = 125°C z z V 5.0 V ± 200 nA 50 µA 3 mA 24 mΩ Applications z z z z z z z © 2009 IXYS CORPORATION, All rights reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100132(03/09) IXFK120N30T IXFX120N30T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 70 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz td(on) td(off) tf S 20 nF pF 135 pF 32 ns 31 ns 87 ns 23 ns 265 nC 87 nC 60 nC Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs 120 1380 Crss tr TO-264 (IXFK) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.13 RthJC RthCS °C/W °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 120 A ISM Repetitive, Pulse Width Limited by TJM 480 A VSD IF = 60A, VGS = 0V, Note 1 1.5 V trr QRM IRM 200 IF = 60A, -di/dt = 100A/µs VR = 75V, VGS = 0V Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T µC 10.4 A Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Dim. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. ns 0.8 Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK120N30T IXFX120N30T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 120 300 VGS = 10V 7V 110 100 VGS = 10V 8V 250 80 7V 200 ID - Amperes ID - Amperes 90 6V 70 60 50 150 6V 100 40 30 50 20 5V 10 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 6 8 10 12 14 16 18 Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature 20 2.8 VGS = 10V 7V 110 2.6 100 2.4 90 2.2 80 RDS(on) - Normalized ID - Amperes 4 VDS - Volts 120 6V 70 60 50 40 5V VGS = 10V 2.0 I D = 120A 1.8 I D = 60A 1.6 1.4 1.2 30 1.0 20 0.8 10 0.6 0 0.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -50 6.0 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 150 140 3.0 VGS = 10V 2.8 120 2.6 TJ = 125ºC 2.4 100 2.2 ID - Amperes RDS(on) - Normalized 2 VDS - Volts 2.0 1.8 1.6 80 60 1.4 40 1.2 TJ = 25ºC 1.0 20 0.8 0.6 0 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 ID - Amperes © 2009 IXYS CORPORATION, All rights reserved -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK120N30T IXFX120N30T Fig. 8. Transconductance Fig. 7. Input Admittance 200 200 180 180 160 160 TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 120 g f s - Siemens ID - Amperes 140 100 80 140 25ºC 120 125ºC 100 80 60 60 40 40 20 20 0 0 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 240 270 Fig. 10. Gate Charge 10 350 VDS = 150V 9 300 I D = 60A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 TJ = 125ºC 100 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 30 60 120 150 180 210 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000.0 100,000 f = 1 MHz RDS(on) Limit Ciss 25µs 100.0 10,000 I D - Amperes Capacitance - PicoFarads 90 QG - NanoCoulombs VSD - Volts Coss 100µs 10.0 1,000 1.0 1ms TJ = 150ºC TC = 25ºC Single Pulse Crss 100 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_120N30T(9W)3-23-09 IXFK120N30T IXFX120N30T Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.00 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All rights reserved IXYS REF: F_120N30T(9W)3-23-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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