IXFX140N25T

Advance Technical Information IXFK140N25T IXFX140N25T GigaMOSTM Power MOSFET VDSS ID25 = = 250V 140A Ω 17mΩ 200ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 250 250 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 140 380 A A IA EAS TC = 25°C TC = 25°C 40 3 A J PD TC = 25°C 960 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns -55 ... +150 150 -55 ... +150 °C °C °C G = Gate S = Source 300 260 °C °C Features 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D (TAB) S PLUS247 (IXFX) (TAB) z z z z z D = Drain TAB = Drain International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 250 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 60A, Note 1 TJ = 125°C z z V 5.0 V ± 200 nA 50 µA 3 mA 17 mΩ Applications z z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100135(03/09) IXFK140N25T IXFX140N25T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 80 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz td(on) td(off) tf S 19 nF pF 185 pF 33 ns 29 ns 92 ns 22 ns 255 nC 90 nC 62 nC Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs 135 1500 Crss tr TO-264 (IXFK) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.13 RthJC RthCS °C/W °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 140 A ISM Repetitive, Pulse Width Limited by TJM 560 A VSD IF = 60A, VGS = 0V, Note 1 1.3 V trr QRM IRM 200 IF = 70A, -di/dt = 100A/µs VR = 75V, VGS = 0V Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T µC 9.30 A Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Dim. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. ns 0.60 Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK140N25T IXFX140N25T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 320 140 VGS = 10V 8V 7V 120 ID - Amperes ID - Amperes 7V 240 100 6V 80 60 200 160 120 6V 40 80 20 40 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2.2 2 4 6 8 10 12 14 16 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature 140 18 2.8 VGS = 10V 8V 7V 100 2.6 VGS = 10V 2.4 RDS(on) - Normalized 120 ID - Amperes VGS = 10V 8V 280 6V 80 60 40 2.2 2.0 I D = 140A 1.8 I D = 70A 1.6 1.4 1.2 1.0 5V 0.8 20 0.6 0.4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 4.5 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 150 160 2.8 VGS = 10V 2.6 140 TJ = 125ºC 2.4 120 2.2 ID - Amperes RDS(on) - Normalized -25 VDS - Volts 2.0 1.8 1.6 100 80 60 1.4 40 1.2 TJ = 25ºC 1.0 20 0.8 0 0 40 80 120 160 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 240 280 320 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF:F_140N25T(9W)3-25-09 IXFK140N25T IXFX140N25T Fig. 7. Input Admittance 220 160 200 160 g f s - Siemens 120 TJ = - 40ºC 180 TJ = 125ºC 25ºC - 40ºC 140 ID - Amperes Fig. 8. Transconductance 180 100 80 25ºC 140 120 125ºC 100 80 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 240 270 Fig. 10. Gate Charge 10 350 VDS = 125V 9 300 I D = 70A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 30 60 90 120 150 180 210 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100,000 RDS(on) Limit Ciss 10,000 I D - Amperes Capacitance - PicoFarads f = 1 MHz Coss 1,000 25µs 100 100µs 10 1ms TJ = 150ºC Crss TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFK140N25T IXFX140N25T Fig. 13. Maximum Transient Thermal Impedance 1.00 Z (th )J C - ºC / W 0.10 0.01 0.00 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF:F_140N25T(9W)3-25-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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