IXFX150N30P3

IXFK150N30P3 IXFX150N30P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 300V 150A 19m 250ns RDS(on)  trr  D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = G TO-264 (IXFK) S G D Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 300 300 V V VGSS VGSM Continuous Transient  20  30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 150 375 A A IA EAS TC = 25C TC = 25C 75 4 A J PD TC = 25C 1300 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g S Maximum Ratings TJ TJM Tstg Tab PLUS247 (IXFX) G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) Tab S G = Gate S = Source D = Drain Tab = Drain Features  TL TSOLD D       Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 5.0 V 200 nA Applications   TJ = 125C 25 A 1 mA 19 m     © 2020 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100478B(1/20) IXFK150N30P3 IXFX150N30P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 65 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 110 S 12.1 nF 1910 pF 40 pF 1.0  44 ns 30 ns 74 ns 12 ns 197 nC 70 nC 65 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.096C/W RthCS 0.15C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 150 A ISM Repetitive, Pulse Width Limited by TJM 600 A VSD IF = 100A , VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 75A, -di/dt = 100A/s 2.9 VR = 100V, VGS = 0V 23.0 250 ns  µC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK150N30P3 IXFX150N30P3 Fig. 1. Output Characteristics @ TJ = 25ºC VGS = 10V 9V 140 VGS = 10V 9V 250 120 8V 200 I D - Amperes 100 I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 300 80 7V 60 8V 150 100 7V 40 50 20 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 0 5 10 Fig. 3. Output Characteristics @ TJ = 125ºC 20 25 Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature 3.0 VGS = 10V 8V 140 15 VDS - Volts VDS - Volts VGS = 10V 2.6 I D - Amperes 100 RDS(on) - Normalized 120 7V 80 60 I D = 150A 1.8 I D = 75A 1.4 1.0 6V 40 2.2 0.6 20 5V 0 0.2 0 3.2 1 2 3 4 5 6 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 160 V GS = 10V 140 120 TJ = 125ºC 2.4 I D - Amperes RDS(on) - Normalized 2.8 2.0 100 80 60 1.6 TJ = 25ºC 40 1.2 20 0 0.8 0 50 100 150 200 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK150N30P3 IXFX150N30P3 Fig. 7. Input Admittance 200 Fig. 8. Transconductance 180 TJ = - 40ºC 180 160 TJ = 125ºC 25ºC - 40ºC 160 140 g f s - Siemens I D - Amperes 140 120 100 80 25ºC 120 125ºC 100 80 60 60 40 40 20 20 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 20 40 60 VGS - Volts 80 100 120 140 160 180 200 220 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 VDS = 150V 9 I D = 75A 8 250 I G = 10mA 200 VGS - Volts I S - Amperes 7 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 VSD - Volts 80 100 120 140 160 180 200 QG - NanoCoulombs Fig. 11. Capacitance 100,000 Fig. 12. Forward-Bias Safe Operating Area 1000 f = 1 MHz RDS(on) Limit Ciss 10,000 25µs 100 1,000 I D - Amperes Capacitance - PicoFarads 60 Coss 100µs 10 100 Crss TJ = 150ºC 1ms TC = 25ºC Single Pulse 10 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK150N30P3 IXFX150N30P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_150N30P3(W9) 6-18-12 IXFK150N30P3 IXFX150N30P3 TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C AM b b2 c e = Gate 2,4 = Drain 3 = Source 1 0P1 BACK SIDE A K M D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b e b2 3 PLCS 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK150N30P3 IXFX150N30P3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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