IXFX20N120P

PolarTM HiPerFETTM Power MOSFET IXFK20N120P IXFX20N120P VDSS ID25 RDS(on) trr D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G = 1200V = 20A  570m  300ns TO-264 (IXFK) S G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 1200 1200 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 20 50 A A IA EAS TC = 25C TC = 25C 10 1 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 15 V/ns PD TC = 25C 780 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) Tab PLUS247 (IXFX) G      VGS = 0V, ID = 1mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V    200 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2019 IXYS CORPORATION,All rights reserved High Power Density Easy to Mount Space Savings Applications V 6.5 Fast Intrinsic Diode Dynamic dv/dt Rating Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages  BVDSS D = Drain Tab = Drain Features  Characteristic Values Min. Typ. Max. Tab S G = Gate S = Source  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) D 50 A 5 mA 570 m    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Discharger Circuits in Lesers Pulsers, Spark Igniters, RF Generators High Voltage Pulse Power Supplies AC and DC Motor Drives High Speed Power Switching Application DS99854C(12/19) IXFK20N120P IXFX20N120P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 VDS = 20V, ID = 0.5 • ID25, Note 1 16 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf RG = 1 (External) Qg(on) Qgs 11.1 nF 600 pF 60 pF 1.6 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd S   48 ns 45 ns 72 ns 70 ns 193 nC 74 nC 85 nC RthJC 0.16C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 20 A ISM Repetitive, Pulse Width Limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM Note IF = 10A, -di/dt = 100A/s 840 9 VR = 100V, VGS = 0V 300 ns nC A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK20N120P IXFX20N120P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 20 40 VGS = 10V 9V 18 VGS = 10V 9V 35 16 30 8V 12 I D - Amperes I D - Amperes 14 10 8 25 20 8V 15 6 10 4 7V 2 7V 5 0 0 0 2 4 6 8 10 0 12 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 2.8 20 VGS = 10V 8V 18 VGS = 10V 2.4 RDS(on) - Normalized 16 14 I D - Amperes 20 VDS - Volts VDS - Volts 12 10 7V 8 6 4 I D = 10A 1.6 1.2 0.8 6V 2 I D = 20A 2.0 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 20 o V GS = 10V 2.2 TJ = 125 C 16 1.8 I D - Amperes RDS(on) - Normalized 2.0 1.6 1.4 12 8 1.2 o TJ = 25 C 4 1.0 0.8 0 0 5 10 15 20 25 I D - Amperes © 2019 IXYS CORPORATION,All rights reserved 30 35 40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK20N120P IXFX20N120P Fig. 7. Input Admittance Fig. 8. Transconductance 35 35 30 30 25 25 o 20 g f s - Siemens I D - Amperes TJ = - 40 C o TJ = 125 C o 25 C 15 o - 40 C o 25 C 20 o 125 C 15 10 10 5 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 Fig. 9. Forward Voltage Drop of Intrinsic Diode 30 35 200 240 280 16 VDS = 600V 14 50 I D = 10A I G = 10mA 12 40 V GS - Volts I S - Amperes 25 Fig. 10. Gate Charge 60 30 10 8 6 o TJ = 125 C 20 4 o TJ = 25 C 10 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 40 VSD - Volts 80 120 160 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 100,000 f = 1 MHz RDS(on) Limit Ciss 25µs 10,000 100µs 10 Z (th)JC - K / W Capacitance - PicoFarads 20 I D - Amperes VGS - Volts Coss 1,000 1ms 1 100 10ms o TJ = 150 C 100ms o Tc = 25 C Single Pulse Crss DC 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 1,000 Pulse Width - Seconds 10,000 IXFK20N120P IXFX20N120P 1 Fig. 13. Maximum Transient Thermal Impedance Fig. 13 Maximum Transient Thermal Impedance aaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION,All rights reserved IXYS REF: F_20N120P(86) 121-17-19-C IXFK20N120P IXFX20N120P TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C AM b b2 c e = Gate 2,4 = Drain 3 = Source 1 0P1 BACK SIDE A K M D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b e b2 3 PLCS 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Drain 3 = Source IXYS reserves the right to change limits, test conditions, and dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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