IXFX220N17T2

Advance Technical Information IXFK220N17T2 IXFX220N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 220A Ω 6.3mΩ 140ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 170 170 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IL(RMS) IDM TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 220 160 550 A A A IA EAS TC = 25°C TC = 25°C 110 2 A J PD TC = 25°C 1250 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G G VGS = 0V, ID = 3mA 170 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 60A, Note 1 5.1 z z z z High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages 5.0 V ± 200 nA z z z z 25 μA 3 mA z 6.3 mΩ z z z © 2010 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Easy to Mount Space Savings High Power Density Applications V TJ = 150°C Tab S Features z BVDSS D G = Gate S = Source z Characteristic Values Min. Typ. Max. Tab S PLUS247 (IXFX) z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D Synchronous Recification DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100230(01/10) IXFK220N17T2 IXFX220N17T2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 105 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 175 S 31 nF 2130 pF 290 pF 1.40 Ω 44 ns 160 ns 40 ns 150 ns 500 nC 130 nC 137 nC 0.12 RthJC RthCS TO-264 (IXFK) Outline °C/W °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 220 A ISM Repetitive, Pulse Width Limited by TJM 880 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr QRM IRM 140 IF = 110A, -di/dt = 100A/μs VR = 85V, VGS = 0V Terminals: Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T μC 8.6 A Terminals: ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 ns 0.5 Dim. 4,931,844 5,017,508 5,034,796 Inches Min. Max. PLUS 247TM (IXFX) Outline Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 1 - Gate 2 - Drain 3 - Source 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain 3 - Source Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK220N17T2 IXFX220N17T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 220 400 VGS = 10V 7V 200 VGS = 10V 7V 350 180 300 6V 140 ID - Amperes ID - Amperes 160 120 100 80 5V 60 6V 250 200 150 100 5V 40 50 20 4V 4V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.5 1.0 1.5 2.0 VDS - Volts 220 4.0 4.5 5.0 VGS = 10V 3.0 2.6 R DS(on) - Normalized 160 ID - Amperes 3.5 3.4 VGS = 10V 7V 6V 180 3.0 Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 200 2.5 VDS - Volts 140 5V 120 100 80 60 I D = 220A 2.2 I D = 110A 1.8 1.4 1.0 40 4V 0.6 20 0 0.2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) ID = 110A Value Fig. 6. Drain Current vs. Case Temperature vs. Drain Current 180 3.4 VGS = 10V 160 3.0 External Lead Current Limit 140 2.6 120 ID - Amperes R DS(on) - Normalized TJ = 175ºC 2.2 1.8 100 80 60 1.4 40 TJ = 25ºC 1.0 20 0.6 0 0 40 80 120 160 200 240 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 280 320 360 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFK220N17T2 IXFX220N17T2 Fig. 7. Input Admittance Fig. 8. Transconductance 350 200 TJ = - 40ºC 180 300 160 250 120 g f s - Siemens ID - Amperes 140 TJ = 150ºC 100 25ºC 80 - 40ºC 60 25ºC 200 150ºC 150 100 40 50 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 20 40 60 80 VGS - Volts 100 120 140 160 180 200 220 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 320 10 VDS = 85V 9 280 I D = 110A 8 I G = 10mA 240 200 VGS - Volts IS - Amperes 7 160 120 TJ = 150ºC 6 5 4 3 80 2 TJ = 25ºC 40 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 50 100 150 200 250 300 350 400 450 500 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100.0 f = 1 MHz Ciss 25µs 100 10.0 ID - Amperes Capacitance - NanoFarads RDS(on) Limit Coss 1.0 100µs 10 1ms TJ = 175ºC TC = 25ºC Single Pulse Crss 0.1 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFK220N17T2 IXFX220N17T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 350 400 RG = 1Ω , VGS = 10V 350 RG = 1Ω , VGS = 10V 300 VDS = 85V I D = 200A TJ = 25ºC 250 t r - Nanoseconds t r - Nanoseconds 300 VDS = 85V 250 200 200 TJ = 125ºC 150 100 150 I D = 100A 50 100 0 50 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 700 500 120 100 I D = 100A 300 80 200 60 100 0 2 3 4 5 6 7 8 9 450 120 400 110 I D = 200A 350 100 300 90 I D = 100A 80 40 200 70 20 150 25 10 35 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf td(off) - - - - RG = 1Ω, VGS = 10V TJ = 25ºC 200 90 100 0 60 80 100 120 140 160 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 180 t f - Nanoseconds 110 tf td(off) - - - - 600 TJ = 125ºC, VGS = 10V VDS = 85V 600 500 I D = 200A 500 400 400 300 I D = 100A 300 200 70 200 100 50 200 100 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds TJ = 125ºC 300 t d(off) - Nanoseconds 130 700 700 150 400 60 125 800 VDS = 85V t f - Nanoseconds 130 VDS = 85V 250 170 40 140 RG - Ohms 600 500 td(off) - - - - t d(off) - Nanoseconds I D = 200A 400 1 200 RG = 1Ω, VGS = 10V t f - Nanoseconds VDS = 85V 180 150 tf 550 140 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 500 160 600 160 600 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXFK220N17T2 IXFX220N17T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance 0.200 .sadgsfgsf Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_220N17T2(8V)1-18-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.