IXFX240N25X3

Preliminary Technical Information IXFK240N25X3 IXFX240N25X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 = 250V = 240A  5.0m  RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IL(RMS) TC = 25C External Lead Current Limit 240 160 A A IDM TC = 25C, Pulse Width Limited by TJM 600 A IA TC = 25C 200 A EAS TC = 25C 3 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 1250 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g G D Tab S PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 250 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 4.5 V 200 nA 25 A 2.5 mA TJ = 125C  Applications   4.1 5.0 m    © 2017 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100833B(9/17) IXFK240N25X3 IXFX240N25X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance 80 Ciss Coss TO-264 Outline Characteristic Values Min. Typ. Max 135 S 1.8  23.8 nF 3.7 nF 1.5 pF VGS = 0V, VDS = 25V, f = 1MHz Crss Q S R D Energy related td(on) Resistive Switching Times tr td(off) tf Time related 1 VGS = 0V VDS = 0.8 • VDSS 1400 5480 pF pF 36 ns 32 ns 180 ns 14 ns 345 nC 112 nC 72 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 3 L1 L c Terminals: b2 b A1 0P 4 1 = Gate 2,4 = Drain 3 = Source 0.10 C/W RthJC RthCS C/W 0.15 Source-Drain Diode PLUS 247TM Outline Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS 2 b1 x2 e Qg(on) Qgs Q1 R1 Effective Output Capacitance Co(er) Co(tr) A E A Characteristic Values Min. Typ. Max VGS = 0V 240 Repetitive, pulse Width Limited by TJM 960 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 120A, -di/dt = 100A/μs VR = 100V ns μC A E1 Q D2 R A ISM 177 1.2 13.5 E A2 D1 D 1 2 4 3 L1 L C A1 b 3 PLCS b4 b2 2 PLCS e 2 PLCS Terminals: 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFK240N25X3 IXFX240N25X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 900 240 VGS = 10V 8V VGS = 10V 9V 800 200 7V 700 8V 600 I D - Amperes I D - Amperes 160 6V 120 80 500 7V 400 300 6V 200 5V 40 100 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 120A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 240 2.4 VGS = 10V 8V VGS = 10V 200 7V 2.0 RDS(on) - Normalized 160 I D - Amperes 15 VDS - Volts 6V 120 80 5V I D = 240A 1.6 I D = 120A 1.2 0.8 40 4V 0.4 0 0 3.5 0.5 1 1.5 2 -50 2.5 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 120A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 3.0 o RDS(on) - Normalized -25 VDS - Volts TJ = 125 C 2.5 2.0 1.5 o TJ = 25 C 1.0 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 0.5 0.5 0 100 200 300 400 500 600 700 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 800 900 1000 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFK240N25X3 IXFX240N25X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 350 180 160 140 VDS = 10V 300 External Lead Current Limit 250 I D - Amperes I D - Amperes 120 100 80 60 200 150 o TJ = 125 C o 100 25 C 40 o - 40 C 50 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 400 800 o 350 TJ = - 40 C VDS = 10V 700 600 o 25 C 250 200 I S - Amperes g f s - Siemens 300 o 125 C 150 500 400 300 100 200 50 100 0 o TJ = 125 C o TJ = 25 C 0 0 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.0 2.2 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 125V C iss Capacitance - PicoFarads I D = 120A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 1,000 C oss 100 Crss 10 f = 1 MHz 1 0 1 0 50 100 150 200 250 300 350 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFK240N25X3 IXFX240N25X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 40 RDS(on) Limit 35 25μs 100μs 100 25 I D - Amperes E OSS - MicroJoules 30 20 15 10 External Lead Current Limit 10 1ms 1 10ms DC o TJ = 150 C o TC = 25 C 5 Fig. 15. Maximum Transient ThermalSingle Impedance Pulse 10 0 50 100 150 200 0.1 250 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.2 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_240N25X3 (29-S301) 5-19-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.