IXFX26N120P

IXFK26N120P IXFX26N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on)  trr  D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = 1200V 26A 500m 300ns G S TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 1200 1200 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 26 60 A A IA EAS TC = 25C TC = 25C 13 1.5 A J PD TC = 25C 960 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D S Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features      Fast Intrinsic Diode Dynamic dv/dt Rating Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V 6.5 V 200 nA Applications   TJ = 125C 50 A 5 mA   500 m   © 2019 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Discharger Circuits in Lesers Pulsers, Spark Igniters, RF Generators High Voltage Pulse Power Supplies AC and DC Motor Drives High Speed Power Switching Application DS99740I(12/19) IXFK26N120P IXFX26N120P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 13 VDS = 20V, ID = 0.5 • ID25, Note 1 21 S 14 nF 725 pF 50 pF 1.5  56 ns 55 ns 76 ns 58 ns 255 nC 87 nC 98 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.13C/W RthCS 0.15C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 13A, -di/dt = 100A/s 1.3 VR = 100V, VGS = 0V 12.0 26 A 104 A 1.5 V 300 ns  µC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK26N120P IXFX26N120P Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 50 VGS = 10V 9V 24 VGS = 10V 45 40 20 9V I D - Amperes I D - Amperes 35 16 8V 12 8 30 25 20 8V 15 10 4 7V 5 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 5 10 15 20 30 Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 3.0 VGS = 10V 9V 24 VGS = 10V 2.6 20 RDS(on) - Normalized 8V I D - Amperes 25 VDS - Volts VDS - Volts 16 12 7V 8 4 I D = 26A 2.2 1.8 I D = 13A 1.4 1.0 0.6 6V 0 0.2 0 2.4 5 10 15 25 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 28 o TJ = 125 C 24 2.0 20 I D - Amperes RDS(on) - Normalized -25 VDS - Volts VGS = 10V 2.2 20 1.8 1.6 1.4 12 8 o TJ = 25 C 1.2 16 4 1.0 0.8 0 0 5 10 15 20 25 30 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 35 40 45 50 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK26N120P IXFX26N120P Fig. 8. Transconductance Fig. 7. Input Admittance 40 30 o TJ = - 40 C 35 25 30 15 g f s - Siemens I D - Amperes 20 o TJ = 125 C o 25 C o - 40 C 10 o 25 C 25 o 20 125 C 15 10 5 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 5 10 15 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 Fig. 10. Gate Charge 80 16 70 14 60 12 50 10 VDS = 600V V GS - Volts I S - Amperes 20 I D - Amperes 40 30 o I D = 13A I G = 10mA 8 6 TJ = 125 C 20 4 o TJ = 25 C 10 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 80 VSD - Volts 120 160 200 Fig. 11. Capacitance 280 320 Fig. 12. Forward-Bias Safe Operating Area 100000 100 RDS(on) Limit 10000 25µs 100µs Ciss 10 Z (th)JC - K / W Capacitance - PicoFarads 240 QG - NanoCoulombs 1000 Coss 1ms 1 100 10ms o TJ = 150 C o 100ms Tc = 25 C Single Pulse Crss f = 1 MHz 10 DC 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 Pulse Width - Seconds 10,000 IXFK26N120P IXFX26N120P 1 Fig. 13. Maximum Transient Thermal Impedance Fig. 13 Maximum Transient Thermal Impedance aaa 0.2 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: IXF_26N120P (96)12-17-19-C IXFK26N120P IXFX26N120P TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C A M b b2 c e = Gate 2,4 = Drain 3 = Source 1 0P1 BACK SIDE A KM D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b e b2 3 PLCS 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK26N120P IXFX26N120P Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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