IXFX320N17T2

Advance Technical Information IXFK320N17T2 IXFX320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 320A Ω 5.2mΩ 150ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 170 170 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IL(RMS) IDM TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 320 160 800 A A A IA EAS TC = 25°C TC = 25°C 100 5 A J PD TC = 25°C 1670 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G (TAB) G = Gate S = Source BVDSS VGS = 0V, ID = 3mA 170 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 60A, Note 1 5.0 ± 200 z z z z z TJ = 150°C Easy to Mount Space Savings High Power Density V Applications V z z z 50 μA 5 mA z 5.2 mΩ z z z z © 2009 IXYS CORPORATION, All Rights Reserved International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z nA D = Drain TAB = Drain Features z Characteristic Values Min. Typ. Max. (TAB) S PLUS247 (IXFX) z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D Synchronous Recification DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100188(09/09) IXFK320N17T2 IXFX320N17T2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 120 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 190 S 45 nF 2890 pF 410 pF 1.96 Ω 46 ns 170 ns 115 ns 230 ns 640 nC 185 nC 175 nC RthJC 0.09 RthCS TO-264 (IXFK) Outline °C/W °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 320 A Repetitive, Pulse Width Limited by TJM 1280 A IF = 100A, VGS = 0V, Note 1 1.25 V 150 IF = 160A, -di/dt = 100A/μs VR = 60V, VGS = 0V Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T μC 9.00 A Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Dim. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. ns 0.53 Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK320N17T2 IXFX320N17T2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 320 400 VGS = 15V 10V 8V 7V 280 240 VGS = 15V 10V 7V 350 300 ID - Amperes ID - Amperes 6V 200 6V 160 120 250 200 150 5.5V 5.5V 100 80 5V 40 5V 50 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 VDS - Volts Fig. 3. Output Characteristics 320 6 7 3.4 VGS = 15V 10V 7V VGS = 10V 3.0 240 2.6 R DS(on) - Normalized ID - Amperes 5 Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature @ T J = 150ºC 280 4 VDS - Volts 6V 200 160 120 5V 80 40 I D = 320A 2.2 I D = 160A 1.8 1.4 1.0 0.6 4V 0.2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 4.0 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 160A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 3.4 VGS = 10V 3.0 160 External Lead Current Limit TJ = 175ºC 2.6 120 ID - Amperes R DS(on) - Normalized 140 2.2 1.8 100 80 60 1.4 40 TJ = 25ºC 1.0 20 0.6 0 0 50 100 150 200 250 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 300 350 400 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFK320N17T2 IXFX320N17T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 400 TJ = - 40ºC 180 350 160 300 g f s - Siemens ID - Amperes 140 120 100 TJ = 150ºC 80 25ºC 60 - 40ºC 25ºC 250 200 150ºC 150 100 40 50 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 10 400 VDS = 85V 9 350 I D = 160A 8 300 I G = 10mA 7 250 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 6 5 4 3 TJ = 150ºC 100 2 TJ = 25ºC 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 100 200 300 400 500 600 700 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000.0 100.0 RDS(on) Limit External Lead Limit 100.0 100µs 10.0 ID - Amperes Capacitance - NanoFarads 25µs Ciss Coss 10.0 1ms 1.0 1.0 100ms TC = 25ºC Crss f = 1 MHz 10ms TJ = 175ºC DC Single Pulse 0.1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_320N17T2(9V)9-02-09 IXFK320N17T2 IXFX320N17T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 360 380 RG = 1Ω , VGS = 10V 340 RG = 1Ω , VGS = 10V 320 VDS = 85V I D VDS = 85V = 200A 280 t r - Nanoseconds t r - Nanoseconds 300 260 220 240 200 TJ = 125ºC 160 120 180 I D TJ = 25ºC = 100A 80 140 40 0 100 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 700 td(on) - - - - TJ = 125ºC, VGS = 10V 120 I D = 100A 300 80 200 40 100 t f - Nanoseconds t r - Nanoseconds 400 3 4 5 6 7 8 9 td(off) - - - - VDS = 85V 500 180 400 160 I D = 200A 300 100 100 25 10 35 45 200 700 180 TJ = 125ºC 160 VDS = 85V 300 140 TJ = 25ºC 120 100 100 0 40 60 80 100 75 85 95 105 115 80 125 120 140 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 80 200 800 tf td(off) - - - - 700 TJ = 125ºC, VGS = 10V I D = 200A VDS = 85V 600 600 500 500 400 400 I D = 100A 300 300 200 200 100 100 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 500 t f - Nanoseconds 600 t d(off) - Nanoseconds t f - Nanoseconds 800 200 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 220 RG = 1Ω, VGS = 10V 55 TJ - Degrees Centigrade 700 400 140 120 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current td(off) - - - - I D = 100A 200 RG - Ohms tf 200 RG = 1Ω, VGS = 10V 0 0 2 200 t d(off) - Nanoseconds 160 I D = 200A t d(on) - Nanoseconds VDS = 85V 1 180 220 tf 600 200 500 160 700 240 600 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXFK320N17T2 IXFX320N17T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.200 Z (th )JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_320N17T2(9V)9-02-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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