IXFX32N100Q3

IXFK32N100Q3 IXFX32N100Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D N-Channel Enhancement Mode Fast Intrinsic Rectifier G G D Symbol Test Conditions VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 32 A IDM TC = 25C, Pulse Width Limited by TJM 96 A IA TC = 25C 32 A EAS TC = 25C 2 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 1250 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g S Maximum Ratings TJ TJM Tstg TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1000V 32A 320m 300ns TO-264 (IXFK) S L = =   Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features       International Standard Packages Low Intrinsic Gate Resistance Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)  V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved 50 A 3 mA 320 m High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100300C(1/20) IXFK32N100Q3 IXFX32N100Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 32 S 10990 pF 745 pF 67 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.20 Qgs  45 ns 15 ns 54 ns 12 ns 195 nC 60 nC 78 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.10C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 32 A Repetitive, Pulse Width Limited by TJM 128 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 16A, -di/dt = 100A/s 1.2 12.3 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK32N100Q3 IXFX32N100Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 32 70 V GS = 10V 28 24 8V 50 20 I D - Amperes I D - Amperes VGS = 10V 60 16 7V 12 8V 40 30 7V 20 8 4 10 6V 6V 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 32 3.4 VGS = 10V 28 30 VGS = 10V 3.0 RDS(on) - Normalized 24 7V I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 20 16 12 6V 8 2.6 I D = 32A 2.2 I D = 16A 1.8 1.4 1.0 4 0.6 5V 0 0.2 0 2.8 5 10 15 20 25 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 35 VGS = 10V 2.6 30 o TJ = 125 C 2.4 25 2.2 I D - Amperes R DS(on) - Normalized 20 VDS - Volts VDS - Volts 2.0 1.8 1.6 20 15 o TJ = 25 C 1.4 10 1.2 5 1.0 0.8 0 0 10 20 30 40 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 50 60 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK32N100Q3 IXFX32N100Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 50 VDS = 20V 45 50 o TJ = - 40 C VDS = 20V 40 o TJ = 125 C 40 o 25 C o - 40 C 30 o g f s - Siemens I D - Amperes 35 25 20 25 C 30 o 125 C 20 15 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 5 10 15 20 VGS - Volts 30 35 40 45 50 55 60 200 220 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 10 90 9 80 8 70 7 60 6 VGS - Volts I S - Amperes 25 50 40 VDS = 500V I D = 16A I G = 10mA 5 4 o TJ = 125 C 30 3 o TJ = 25 C 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 V SD - Volts 80 100 120 140 160 180 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 100 RDS(on) Limit f = 1 MHz 100µs Ciss 10,000 10 I D - Amperes Capacitance - PicoFarads 60 Coss 1,000 1 100 o TJ = 150 C o TC = 25 C Single Pulse Crss 10 1ms 0.1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 V DS - Volts 10,000 IXFK32N100Q3 IXFX32N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N100Q3(Q8-R44)10-10-12 IXFK32N100Q3 IXFX32N100Q3 TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C A M b b2 c e = Gate 2,4 = Drain 3 = Source 1 0P1 BACK SIDE A KM D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b b2 3 PLCS e 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK32N100Q3 IXFX32N100Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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