IXFX32N50Q

VDSS IXFK 32N50Q IXFX 32N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM 32 120 A A IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 32 A EAR TC = 25°C 45 mJ 1500 mJ 5 V/ns 416 W -55 ... + 150 150 -55 ... + 150 °C °C °C 300 °C 1.13/10 Nm/lb.in. 6 4 g g EAS IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 PLUS 247TM (IXFX) G G G = Gate S = Source VDSS VGS = 0 V, ID = 250 uA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2004 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 z z TJ = 25°C TJ = 125°C z z V 4.5 V ±100 nA 100 1 µA mA 0.16 Ω D (TAB) S D = Drain TAB = Drain Features z Test Conditions (TAB) D TO-264 AA (IXFK) z Symbol RDS(on) 500 V 32 A 0.16 Ω 500 V 32 A 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt dv/dt ID25 IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z PLUS 247TM package for clip or spring mounting Space savings High power density DS98604E(01/04) IXFK 32N50Q IXFX 32N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 28 S 3950 pF 640 pF Crss 210 pF td(on) 35 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 18 tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 ns td(off) RG = 2 Ω (External), 75 ns 20 ns 150 nC 26 nC 85 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.3 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. t rr QRM K/W IF = 25A, -di/dt = 100 A/µs, VR = 100 V IRM 32 A 128 A 1.5 V 250 ns 0.75 µC 7.5 A Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXFK 32N50Q IXFX 32N50Q Figure 1. Output Characteristics at 25OC 80 TJ = 125OC 6V 50 40 30 20 30 5V 20 4V 0 0 4 8 12 16 0 20 0 4 8 VDS - Volts 16 20 Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.8 2.8 VGS = 10V VGS = 10V 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 12 VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID Tj=1250 C 2.0 1.6 Tj=250 C 1.2 0 10 20 30 40 50 2.4 ID = 32A 2.0 1.2 0.8 25 60 ID = 16A 1.6 50 Figure 5. Drain Current vs. Case Temperature 32 40 ID - Amperes 50 24 16 8 -50 0 25 50 75 TC - Degrees C © 2004 IXYS All rights reserved 125 150 30 20 100 125 150 0 TJ = 25oC TJ = 125oC 10 -25 100 Figure 6. Admittance Curves 40 0 75 TJ - Degrees C ID - Amperes ID - Amperes 6V 10 5V 10 0.8 VGS= 9V 8V 7V 40 ID - Amperes 60 ID - Amperes 50 VGS=10V 9V 8V 7V TJ = 25OC 70 Figure 2. Output Characteristics at 125OC 2 3 4 VGS - Volts 5 6 IXFK 32N50Q IXFX 32N50Q Figure 7. Gate Charge Figure 8. Capacitance Curves 14 10000 Vds=300V ID=16A IG=10mA VGS - Volts 10 F = 1MHz Ciss Capacitance - pF 12 8 6 4 Coss 1000 Crss 2 0 0 50 100 150 200 100 250 0 Gate Charge - nC 5 10 15 20 25 VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS= 0V ID - Amperes 80 60 TJ=125OC 40 20 TJ=25OC 0 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 0.40 R(th)JC - K/W 0.20 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.