IXFX32N80P

PolarHVTM HiPerFET Power MOSFET IXFK 32N80P IXFX 32N80P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 32 A IDM TC = 25° C, pulse width limited by TJM 70 A IAR TC = 25° C 16 A EAR TC = 25° C 50 mJ EAS TC = 25° C 2.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 830 W -55 ... +150 150 -55 ... +150 300 260 °C °C °C °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (TO-264) Weight TO-264 PLUS247 TO-264 (IXFK) G S (TAB) PLUS247 (IXFX) (TAB) G = Gate S = Source 10 6 g g D = Drain Tab = Drain Features l Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 800 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS IDSS V 5.0 V VGS = ±30 VDC, VDS = 0 ±200 nA VDS = VDSS VGS = 0 V 25 1000 µA µA TJ = 125° C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved D 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25° C, unless otherwise specified) RDS(on) = 800 V = 32 A ≤ 270 mΩ Ω ≤ 250 ns 270 mΩ l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99425E(01/06) IXFK 32N80P IXFX 32N80P Symbol Test Conditions gfs VDS = 20 V; ID = 0.5 ID25, pulse test 38 S 23 8800 pF 700 pF Crss 26 pF td(on) 30 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 24 ns td(off) RG = 2 Ω (External) 85 ns 24 ns 150 nC 40 nC 44 nC tf Qg(on) Qgs PLUS 247TM Outline Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 0.15 ° C/W RthJC ° C/W 0.15 RthCS Source-Drain Diode Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 32 A ISM Repetitive 70 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/µs 250 ns QRM VR = 100V, VGS = 0 V IRM 0.8 µC 6.0 A Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFK 32N80P IXFX 32N80P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 35 70 VGS = 10V VGS = 10V 30 25 50 6V I D - Amperes I D - Amperes 7V 60 7V 20 15 10 6V 40 5V 30 20 5 10 5V 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 Fig. 3. Output Characteristics 25 30 3.1 35 VGS = 10V 2.8 R D S ( o n ) - Normalized 7V 30 6V 25 I D - Amperes 20 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 20 15 10 5V 5 VGS = 10V 2.5 2.2 1.9 I D = 32A 1.6 I D = 16A 1.3 1.0 0.7 0.4 0 0 3 6 9 12 15 18 21 -50 24 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 2.8 35 2.6 VGS = 10V TJ = 125º C 30 2.4 25 2.2 I D - Amperes R D S ( o n ) - Normalized 15 V D S - Volts V D S - Volts 2.0 1.8 1.6 1.4 20 15 10 1.2 5 TJ = 25º C 1.0 0 0.8 0 10 20 30 40 I D - Amperes © 2006 IXYS All rights reserved 50 60 70 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFK 32N80P IXFX 32N80P Fig. 8. Transconductance Fig. 7. Input Adm ittance 45 70 40 60 30 25 TJ = 125º C 25º C 20 -40º C 15 50 g f s - Siemens I D - Amperes 35 40 30 TJ = -40º C 20 25º C 10 125º C 10 5 0 0 3 3.5 4 4.5 5 0 5 10 15 V G S - Volts 25 30 35 40 45 Fig. 10. Gate Charge 100 10 90 9 80 8 I D = 16A 7 I G = 10mA 70 VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 60 50 40 20 I D - Amperes TJ = 125º C 30 VDS = 400V 6 5 4 3 TJ = 25º C 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 V S D - Volts 20 40 60 80 100 120 140 160 Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 100000 1.00 C iss 10000 R( t h ) J C - ºC / W Capacitance - picoFarads f = 1MHz C oss 1000 0.10 100 C rs 10 0.01 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 Pulse Width - milliseconds 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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