IXFX32N80Q3

IXFK32N80Q3 IXFX32N80Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   800V 32A 270m 300ns G TO-264 (IXFK) S G D Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C, RGS = 1M 800 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 32 A IDM TC = 25C, Pulse Width Limited by TJM 80 A IA EAS TC = 25C TC = 25C 32 3 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 1000 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C  1.13/10 Nm/lb.in  20..120 /4.5..27 N/lb 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) Tab PLUS247 (IXFX) G   VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 800 3.0 V    200 nA TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG High Power Density Easy to Mount Space Savings Applications V 6.0 D = Drain Tab = Drain Advantages  BVDSS Tab S Features  Characteristic Values Min. Typ. Max. D G = Gate S = Source  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) S 50 A 2 mA   DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 270 m DS100361C(1/20) IXFK32N80Q3 IXFX32N80Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 16 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 26 S 6940 pF 700 pF 63 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.16 Qgs  38 ns 13 ns 45 ns 10 ns 140 nC 48 nC 63 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.125C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 32 A Repetitive, Pulse Width Limited by TJM 128 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 16A, -di/dt = 100A/s 1.4 12.0 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK32N80Q3 IXFX32N80Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 32 80 VGS = 10V 9V 24 60 20 50 16 V GS = 10V 70 I D - Amperes I D - Amperes 28 8V 12 8 9V 40 30 8V 20 4 10 7V 7V 0 0 0 1 2 3 4 5 6 7 8 0 5 10 15 Fig. 3. Output Characteristics @ TJ = 125oC 32 30 RDS(on) - Normalized 20 16 7V 12 8 2.2 I D = 32A I D = 16A 1.8 1.4 1.0 0.6 6V 4 VGS = 10V 2.6 24 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature 3.0 V GS = 10V 8V 28 20 VDS - Volts VDS - Volts 0 0.2 0 2.8 2 4 6 8 10 14 16 18 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature V GS = 10V 2.6 12 35 125 150 125 150 o TJ = 125 C 30 25 2.2 I D - Amperes R DS(on) - Normalized 2.4 2.0 1.8 o TJ = 25 C 1.6 1.4 20 15 10 1.2 5 1.0 0.8 0 0 10 20 30 40 50 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 60 70 80 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK32N80Q3 IXFX32N80Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 50 60 o TJ = - 40 C 45 50 40 g f s - Siemens I D - Amperes 35 30 25 o TJ = 125 C 20 o 25 C 15 o 25 C 40 o 125 C 30 20 o - 40 C 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 5 10 15 VGS - Volts 20 25 30 35 40 45 50 55 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 16 90 14 80 VDS = 400V I D = 16A I G = 10mA 12 60 V GS - Volts I S - Amperes 70 50 40 o 10 8 6 TJ = 125 C 30 o TJ = 25 C 4 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 50 VSD - Volts Fig. 11. Capacitance 150 200 Fig. 12. Forward-Bias Safe Operating Area 100 100,000 RDS(on) Limit f = 1 MHz C iss 10,000 25µs I D - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs 1,000 C oss 100µs 10 100 o TJ = 150 C o C rss TC = 25 C Single Pulse 10 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK32N80Q3 IXFX32N80Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N80Q3(R8)7-13-11 IXFK32N80Q3 IXFX32N80Q3 TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C A M b b2 c e = Gate 2,4 = Drain 3 = Source 1 0P1 BACK SIDE A KM D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b b2 3 PLCS e 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK32N80Q3 IXFX32N80Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved