IXFX55N50

HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) 500 V 50 A 100 mΩ Ω Ω 500 V 55 A 80 mΩ trr ≤ 250 ns IXFX 50N50 IXFX 55N50 Single Die MOSFET Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 50 55 200 220 50 55 A A A A A A EAR TC = 25°C 60 mJ EAS TC = 25°C 3 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns 50N50 55N50 50N50 55N50 50N50 55N50 D (TAB) TC = 25°C W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque G Weight 1.13/10 Nm/lb.in. 6 g l l l l l l Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS V GS = ±20 V, VDS = 0 IDSS V DS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2002 IXYS All rights reserved V 4.5 V ±200 nA TJ = 25°C TJ = 125°C 25 2 µA mA 50N50 55N50 100 80 mΩ mΩ International standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications l Symbol D Features l 520 PD PLUS 247TM (IXFX) l l l l DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Advantages l l l PLUS 247TM package for clip or spring mounting Space savings High power density 98507D (04/02) IXFX 50N50 IXFX 55N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25 Note 1 Ciss S 9400 pF 1280 pF Crss 460 pF td(on) 45 ns 60 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 45 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 2 Ω (External), 120 ns 45 ns 330 nC 55 nC 155 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.22 RthJC 0.15 RthCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 55N50 50N50 55 50 A A ISM Repetitive; pulse width limited by TJM 55N50 50N50 220 200 A A VSD IF = IS, VGS = 0 V 1.5 V 250 ns Note 1 t rr QRM IRM 1.0 µC 10 A IF =25 A,-di/dt = 100 A/µs, VR = 100 V PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 Note: 1.Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFX 50N50 IXFX 55N50 Figure 1. Output Characteristics at 25OC ID - Amperes TJ = 125OC VGS = 10V 9V 8V 7V TJ = 25OC 120 100 80 6V 80 60 40 Figure 2. Output Characteristics at 125OC 100 ID - Amperes 140 5V VGS = 10V 9V 8V 7V 6V 60 5V 40 20 20 0 0 0 4 8 12 16 20 0 24 4 8 12 Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 2.2 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 24 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ VGS = 10V TJ = 125OC 2.0 1.6 TJ = 25OC 1.2 2.0 VGS = 10V 1.8 ID = 55A 1.6 1.4 ID = 27.5A 1.2 0.8 0 20 40 60 80 100 1.0 25 120 50 ID - Amperes 100 125 150 Figure 6. Admittance Curves 60 100 50 IXF_55N50 80 ID - Amperes 40 IXF_50N50 30 20 TJ = 125oC 60 40 TJ = 25oC 20 10 0 -50 75 TJ - Degrees C Figure 5. Drain Current vs. Case Temperature ID - Amperes 20 VDS - Volts VDS - Volts 2.8 16 -25 0 25 50 75 TC - Degrees C © 2002 IXYS All rights reserved 100 125 150 0 3.0 3.5 4.0 4.5 VGS - Volts 5.0 5.5 6.0 IXFX 50N50 IXFX 55N50 Figure 7. Gate Charge Figure 8. Capacitance Curves 10000 12 Ciss VGS - Volts Capacitance - pF VDS = 250V ID = 27.5A 10 8 6 4 f = 1MHz Coss 1000 Crss 2 100 0 0 50 100 150 200 250 300 0 350 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 ID - Amperes 80 60 40 TJ = 125OC 20 TJ = 25OC 0 0.2 0.4 0.6 0.8 1.0 Figure10. Forward Bias Safe Operating Area R(th)JC - K/W 1.00 0.10 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.