IXFX64N60P3

IXFK64N60P3 IXFX64N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 600V 64A  100m 250ns RDS(on)   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 600 600 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 64 160 A A IA EAS TC = 25C TC = 25C 32 1.5 A J PD TC = 25C 1130 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features        Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C   V 5.0 V 200 nA Applications  25 A 3 mA  100 m     © 2014 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100312B(04/14) IXFK64N60P3 IXFX64N60P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 36 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf Qgs S 9.9 nF pF 4.0 pF 1.1  43 ns 17 ns 66 ns 11 ns 145 nC 44 nC 35 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) 60 920 Crss RGi TO-264 AA Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.11C/W RthCS 0.15C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 64 A Repetitive, Pulse Width Limited by TJM 260 A IF = IS , VGS = 0V, Note 1 1.5 V IF = 32A, -di/dt = 100A/s 1.2 VR = 100V, VGS = 0V 12.6 250 ns  μC Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 PLUS 247TM Outline Terminals: 1 - Gate 2 - Drain 3 - Source Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK64N60P3 IXFX64N60P3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 140 VGS = 10V 7V 60 VGS = 10V 8V 120 50 100 7V I D - Amperes I D - Amperes 6V 40 30 20 80 6V 60 40 10 20 5V 5V 0 0 0 1 2 3 4 5 6 0 7 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.4 VGS = 10V 7V 60 VGS = 10V 3.0 RDS(on) - Normalized 50 I D - Amperes 6V 40 30 5V 20 2.6 I D = 64A 2.2 I D = 32A 1.8 1.4 1.0 10 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 70 3.0 VGS = 10V 60 TJ = 125ºC 50 I D - Amperes RDS(on) - Normalized 2.6 2.2 1.8 1.4 40 30 20 TJ = 25ºC 1.0 10 0.6 0 0 20 40 60 80 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 100 120 140 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK64N60P3 IXFX64N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 90 120 TJ = - 40ºC 80 100 70 I D - Amperes g f s - Siemens TJ = 125ºC 25ºC - 40ºC 60 50 40 30 80 25ºC 60 125ºC 40 20 20 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 30 40 VGS - Volts 50 60 70 80 90 140 160 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 140 I D = 32A 8 120 I G = 10mA 7 VGS - Volts 100 I S - Amperes VDS = 300V 9 80 60 TJ = 125ºC 6 5 4 3 40 TJ = 25ºC 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 VSD - Volts 60 80 100 120 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 f = 1 MHz RDS(on) Limit 100 I D - Amperes Capacitance - PicoFarads Ciss 10,000 1,000 Coss 100 100µs 10 1 10 TJ = 150ºC Crss 1ms TC = 25ºC Single Pulse 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK64N60P3 IXFX64N60P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_64N60P3(K8)03-16-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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