IXFX80N50Q3

IXFK80N50Q3 IXFX80N50Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G = =   500V 80A 65m 250ns TO-264 (IXFK) S G D Symbol Test Conditions VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 80 A IDM TC = 25C, Pulse Width Limited by TJM 240 A IA TC = 25C 80 A EAS TC = 25C 5 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 1250 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g S Maximum Ratings TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) Tab PLUS247 (IXFX) G     VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V 200 nA IDSS VDS = VDSS, VGS = 0V 50 A 2 mA RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages  High Power Density Easy to Mount Space Savings Applications BVDSS V 6.5 D = Drain Tab = Drain Features  Characteristic Values Min. Typ. Max. Tab S G = Gate S = Source  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) D V      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 65 m DS100299A(12/19) IXFK80N50Q3 IXFX80N50Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 35 VDS = 20V, ID = 0.5 • ID25, Note 1 55 S 10 nF 1260 pF 115 pF Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.15 Qgs  30 ns 20 ns 43 ns 15 ns 200 nC 77 nC 90 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.10C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 80 A Repetitive, Pulse Width Limited by TJM 320 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 40A, -di/dt = 100A/s 1.8 15.6 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK80N50Q3 IXFX80N50Q3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 80 180 V GS = 10V V GS = 10V 160 70 120 50 I D - Amperes I D - Amperes 140 9V 60 40 30 8V 9V 100 80 60 20 40 10 8V 20 7V 7V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 5 10 15 3.4 80 VGS = 10V 9V 50 RDS(on) - Normalized I D - Amperes 30 8V 40 30 20 V GS = 10V 3.0 60 2.6 I D = 80A 2.2 I D = 40A 1.8 1.4 1.0 7V 10 0.6 6V 0 0.2 0 2 4 6 8 10 12 -50 -25 0 VDS - Volts VGS = 10V 2.8 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current 3.0 90 80 o TJ = 125 C 2.6 70 2.4 60 2.2 I D - Amperes R DS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 70 20 VDS - Volts VDS - Volts 2.0 1.8 1.6 50 40 30 1.4 20 o TJ = 25 C 1.2 10 1.0 0.8 0 0 20 40 60 80 100 120 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK80N50Q3 IXFX80N50Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 120 100 o TJ = - 40 C 100 80 o o TJ = 125 C o 25 C o - 40 C 60 25 C g f s - Siemens I D - Amperes 80 60 o 125 C 40 40 20 20 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 20 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 80 100 120 Fig. 10. Gate Charge 240 16 VDS = 250V 14 200 I D = 40A I G = 10mA 12 160 VGS - Volts I S - Amperes 60 I D - Amperes 120 80 10 8 6 o TJ = 125 C 4 o TJ = 25 C 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 40 80 VSD - Volts Fig. 11. Capacitance 160 200 240 280 Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit Ciss 10,000 100µs 100 I D - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs 1,000 Coss 100 10 1 o TJ = 150 C C rss o TC = 25 C Single Pulse 10 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK80N50Q3 IXFX80N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaa 0.2 Z(th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N50Q3(Q8)02-18-11 IXFK80N50Q3 IXFX80N50Q3 TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C AM b b2 c e = Gate 2,4 = Drain 3 = Source 1 0P1 BACK SIDE A K M D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b b2 3 PLCS e 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK80N50Q3 IXFX80N50Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved