IXFX98N50P3

IXFK98N50P3 IXFX98N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 98A  50m 250ns RDS(on)   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 500 500 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 98 245 A A IA EAS TC = 25C TC = 25C 49 4.5 A J PD TC = 25C 1300 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features        Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C   V 5.0 V 200 nA Applications  25 A 1.5 mA  50 m     © 2014 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100317B(9/14) IXFK98N50P3 IXFX98N50P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 90 S 12.9 nF 1300 pF 11 pF 1.2  48 ns 21 ns 90 ns 12 ns 200 nC 63 nC 62 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs TO-264 AA Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.096C/W RthCS 0.15C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 98 A Repetitive, Pulse Width Limited by TJM 390 A IF = IS , VGS = 0V, Note 1 1.5 V IF = 49A, -di/dt = 100A/s 1.6 VR = 100V, VGS = 0V 15.4 250 ns  μC Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 PLUS 247TM Outline Terminals: 1 - Gate 2 - Drain 3 - Source Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK98N50P3 IXFX98N50P3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 100 200 VGS = 10V VGS = 10V 90 180 8V 80 160 7V 140 I D - Amperes I D - Amperes 70 60 50 40 6V 30 7V 120 100 80 60 20 40 10 6V 20 5V 5V 0 0 0 1 2 3 4 5 0 5 10 15 20 25 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 49A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 100 3.4 VGS = 10V 7V 90 VGS = 10V 3.0 RDS(on) - Normalized 80 I D - Amperes 70 60 6V 50 40 30 2.6 I D = 98A 2.2 I D = 49A 1.8 1.4 1.0 20 5V 0.6 10 0 0.2 0 2 4 6 8 10 12 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 49A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 110 3.4 VGS = 10V 100 3.0 90 2.6 80 TJ = 125ºC I D - Amperes RDS(on) - Normalized -25 VDS - Volts 2.2 1.8 1.4 70 60 50 40 30 20 TJ = 25ºC 1.0 10 0.6 0 0 20 40 60 80 100 120 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 140 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK98N50P3 IXFX98N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 140 160 120 140 TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 120 g f s - Siemens I D - Amperes 100 80 60 25ºC 100 125ºC 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 20 40 VGS - Volts 80 100 120 140 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 VDS = 250V 9 250 I D = 49A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 60 I D - Amperes 150 6 5 4 100 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 VSD - Volts 80 100 120 140 160 180 200 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit Ciss 10,000 100 100µs I D - Amperes Capacitance - PicoFarads 60 1,000 Coss 100 10 1 1ms 10 TJ = 150ºC 0.1 10ms TC = 25ºC Single Pulse Crss 1 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK98N50P3 IXFX98N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 Z (th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_98N50P3(W9-W38) 9-25-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.