IXFY4N60P3

IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Polar3 TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 4A  2.4  TO-252 (IXFY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 4 A IDM TC = 25C, Pulse Width Limited by TJM 8 A IA TC = 25C 2 A EAS TC = 25C 200 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 114 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in. TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 TO-263 (IXFA) 0.35 2.50 3.00 g g g G S D (Tab) TO-220 (IXFP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1    TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved V 5.0 V Applications 100 nA  10 A 100 μA    2.4  High Power Density Easy to Mount Space Savings  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100427C(6/18) IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 • ID25, Note 1 2.2 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 3.7 S 6.0  365 pF 46 pF 3 pF 15 ns 24 ns 24 ns 23 ns 6.9 nC 1.7 nC 2.8 nC 1.10 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 4 A Repetitive, Pulse Width Limited by TJM 16 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 4A, -di/dt = 25A/μs 0.35 2.15 VR = 100V 250 ns C A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Fig. 1. Output Characteristics @ TJ = 25oC 4 VGS = 10V 8V 3.5 VGS = 10V 8V 6 3 7V 5 2.5 I D - Amperes I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25oC 7 2 1.5 6V 7V 4 3 2 1 6V 1 0.5 5V 5V 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 4 3.4 VGS = 10V 7V 30 VGS = 10V 3.0 RDS(on) - Normalized 3 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 3.5 20 VDS - Volts VDS - Volts 6V 2.5 2 1.5 1 2.6 I D = 4A 2.2 I D = 2A 1.8 1.4 1.0 5V 0.5 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.4 VGS = 10V 4 3.0 o I D - Amperes RDS(on) - Normalized TJ = 125 C 2.6 2.2 1.8 1.4 o TJ = 25 C 3 2 1 1.0 0.6 0 0 1 2 3 4 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 5 6 7 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Fig. 7. Input Admittance 5.0 Fig. 8. Transconductance 7 4.5 o 6 TJ = - 40 C 4.0 5 g f s - Siemens I D - Amperes 3.5 3.0 2.5 2.0 o TJ = 125 C o 25 C o 1.5 - 40 C o 25 C 4 o 125 C 3 2 1.0 1 0.5 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 0.5 1 1.5 VGS - Volts 2.5 3 3.5 4 4.5 5 5.5 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 12 Fig. 10. Gate Charge 10 VDS = 300V 9 10 I D = 2A 8 I G = 10mA 7 VGS - Volts 8 I S - Amperes 2 6 o TJ = 125 C 4 6 5 4 3 o TJ = 25 C 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 VSD - Volts 2 3 4 5 6 7 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10 1,000 RDS(on) Limit 100 I D - Amperes Capacitance - PicoFarads 25μs C iss C oss 100μs 1 10 o TJ = 150 C o TC = 25 C Single Pulse C rss f = 1 MHz 1 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Fig. 13. Maximum Transient Thermal Impedance 10 Fig. 13. Maximum Transient Thermal Impedance aaaaaa 2 Z (th )JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_4N60P3(K2)12-07-11 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 TO-252 Outline TO-263 Outline TO-220 Outline A E C2 L1 L2 2 A1 3 A oP D1 D 1 E E1 A1 H1 Q 4 H D2 D D1 b b2 L3 e c 0.43 [11.0] E1 e A2 EJECTOR 0 PIN L1 L 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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