IXGA20N120B3

Preliminary Technical Information VCES = 1200V IC90 = 20A VCE(sat) ≤ 3.1V IXGA20N120B3 IXGP20N120B3 GenX3TM 1200V IGBT High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM Continuous Transient IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1ms SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 15Ω Clamped Inductive load PC TC = 25°C G Maximum Ratings 1200 1200 V V ±20 ±30 V V 36 20 80 A A A ICM = 40 @VCE ≤ 1200 A V 180 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 10..65 / 2.2..14.6 Nm/lb.in. N/lb. TJ TJM Tstg Md FC Mounting Torque (TO-220) Mounting Force (TO-263) TL TSOLD Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Weight TO-263 TO-220 300 260 °C °C 2.5 3.0 g g E TO-220 (IXGP) G IC IC ICES VCE = VCES,VGE = 0V 1200 2.5 TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 16A, VGE = 15V, Note 2 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2.7 2.8 C = Collector TAB = Collector z z z Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications Characteristic Values Min. Typ. Max. = 250μA, VGE = 0V = 250μA, VCE = VGE E Features z BVCES VGE(th) C (TAB) C G = Gate E = Emitter z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C (TAB) z 5.0 V V 25 1 μA mA ±100 nA 3.1 V V z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines Inductive Heating DS100126(03/09) IXGA20N120B3 IXGP20N120B3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 16A, VCE = 10V, Note 2 7.5 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 12.5 S 1070 80 32 pF pF pF 51 nC 7.4 nC 23 nC 16 31 0.92 150 155 ns ns mJ ns ns Qg Qge IC = 16A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°°C IC = 16A, VGE = 15V VCE = 600V, RG = 15Ω Note 1 Eoff 0.56 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°°C IC = 16A, VGE = 15V VCE = 600V, RG = 15Ω Note 1 RthJC RthCK TO-220 TO-263 (IXGA) Outline 1.00 mJ 16 45 1.60 180 540 1.63 ns ns mJ ns ns mJ 0.50 0.69 °C/W °C/W TO-220 (IXGP) Outline Notes: 1. 2. Switching Times may Increase for VCE (Clamp) > 0.5 • VCES, Higher TJ or Increased RG. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. Pins: 1 - Gate 2 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA20N120B3 IXGP20N120B3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 140 32 VGE = 15V 13V 11V 28 VGE = 15V 120 100 20 13V 9V IC - Amperes IC - Amperes 24 16 12 7V 80 11V 60 40 8 9V 20 4 5V 7V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 4 8 12 20 24 28 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 32 1.6 VGE = 15V 13V 11V 28 VGE = 15V 1.5 1.4 VCE(sat) - Normalized 24 9V IC - Amperes 16 VCE - Volts VCE - Volts 20 16 7V 12 I C = 32A 1.3 1.2 1.1 1.0 I C = 16A 0.9 8 0.8 4 I 0.7 5V = 8A 0.6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 5.0 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 40 8 TJ = 25ºC 7 35 30 5 I C IC - Amperes 6 VCE - Volts C = 32A 4 16A 3 25 20 15 TJ = - 40ºC 25ºC 125ºC 10 8A 2 5 1 0 5 6 7 8 9 10 11 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 IXGA20N120B3 IXGP20N120B3 Fig. 7. Transconductance Fig. 8. Gate Charge 16 16 14 14 12 12 25ºC 10 125ºC VGE - Volts g f s - Siemens TJ = - 40ºC 8 6 VCE = 600V I C = 16A I G = 10 mA 10 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 0 45 5 10 15 Fig. 9. Capacitance 25 30 35 40 45 50 Fig. 10. Reverse-Bias Safe Operating Area 45 10,000 40 f = 1MHz 35 Cies 30 1,000 IC - Amperes Capacitance - PicoFarads 20 QG - NanoCoulombs IC - Amperes Coes 100 25 20 15 10 5 Cres 0 200 10 0 5 10 15 20 25 30 35 40 TJ = 125ºC RG = 15Ω dV / dt < 10V / ns 300 400 500 600 VCE - Volts 700 800 900 1000 1100 1200 1300 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_20N120B3(4L)03-17-09 IXGA30N120B3 IXGP30N120B3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 3.2 --- TJ = 125ºC , VGE = 15V 3.2 5.0 2.8 Eoff 2.4 VCE = 600V 4.5 VCE = 600V 4.0 = 32A 2.2 3.0 2.0 2.5 1.8 2.0 I C = 16A 1.6 1.0 1.2 30 40 50 60 70 80 2.0 2.5 1.6 2.0 1.2 1.5 TJ = 25ºC 0.8 1.0 0.4 0.5 0.0 10 90 12 14 16 18 RG - Ohms 26 28 30 32 600 4.4 VCE = 600V 3.6 I C = 32A 2.0 3.2 2.8 1.5 2.4 2.0 I C = 16A 1.0 1.6 tfi 700 td(off) - - - 500 TJ = 125ºC, VGE = 15V VCE = 600V 600 400 I 500 C = 32A 300 I 400 C = 16A 200 1.2 0.5 300 0.8 t d(off) - Nanoseconds 4.0 t f - Nanoseconds ---- RG = 15Ω , VGE = 15V Eon - MilliJoules Eoff - MilliJoules 24 800 4.8 Eon 22 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 3.0 Eoff 20 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 2.5 3.0 TJ = 125ºC 0.0 0.5 20 3.5 1.5 1.4 10 ---- - MilliJoules 3.5 - MilliJoules 2.4 on E C Eon RG = 15Ω , VGE = 15V on I 4.0 E 2.6 Eoff - MilliJoules 2.8 Eoff - MilliJoules Eon - Eoff 3.0 5.5 100 0.4 0.0 25 35 45 55 65 75 85 95 105 115 200 0.0 125 0 10 20 30 40 td(off) - - - - 600 VCE = 600V RG = 15Ω , VGE = 15V TJ = 125ºC 240 700 220 600 VCE = 600V 200 400 180 300 160 TJ = 25ºC 140 100 0 16 18 20 22 24 26 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 28 30 32 240 tfi t f i - Nanoseconds tfi 14 90 td(off) - - - - 220 RG = 15Ω , VGE = 15V 200 500 180 I C = 16A 400 160 300 140 I C = 32A 200 120 100 100 0 120 100 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 80 125 t d(off) - Nanoseconds 700 12 80 800 260 t d(off) - Nanoseconds t f i - Nanoseconds 800 10 70 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 200 60 RG - Ohms TJ - Degrees Centigrade 500 50 IXGA20N120B3 IXGP20N120B3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 200 90 160 80 60 C 50 = 32A 100 40 I 80 C = 16A 30 60 20 40 10 20 20 30 40 50 60 70 80 24 VCE = 600V 100 22 80 20 60 18 TJ = 125ºC 40 16 20 0 10 td(on) - - - - RG = 15Ω , VGE = 15V 14 TJ = 25ºC 0 12 10 90 t d(on) - Nanoseconds VCE = 600V I tri 70 140 120 26 120 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V t r i - Nanoseconds tri 180 140 12 14 16 18 20 22 24 26 28 30 32 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 28 tri 140 td(on) - - - - 26 RG = 15Ω , VGE = 15V t r i - Nanoseconds 24 100 22 I C = 32A 80 20 60 18 40 I C 16 = 16A 20 t d(on) - Nanoseconds VCE = 600V 120 14 0 25 35 45 55 65 75 85 95 105 115 12 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_20N120B3(4L)03-17-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.