IXGA30N60C3C1

IXGA30N60C3C1* IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode *Obsolete Part Number VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 IF110 ICM TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms 60 30 13 150 A A A A A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 (RBSOA) Clamped Inductive Load @ ≤ VCES PC TC = 25°C TJ W -55 ... +150 °C 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10 seconds 260 °C Md Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ± 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 5.5 V 25 μA ±100 nA TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved 2.6 1.8 3.0 C (Tab) C E G = Gate S = Emitter C (Tab) D = Collector Tab = Collector Features Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Packages Advantages High Power Density Low Gate Drive Requirement 300 μA TJ = 125°C CE TO-247 (IXGH) G 220 TJM IGES G V V Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100142B(05/11) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 20A, VCE = 10V, Note 1 9 16 S 1075 pF 196 pF 29 pF 38 nC 8 nC Qgc 17 nC td(on) 17 ns Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES tri Inductive Load, TJ = 25°C Eon IC = 20A, VGE = 15V td(off) VCE = 300V, RG = 5Ω 42 tfi Note 2 47 Eoff 20 ns 0.12 mJ 0.09 td(on) 75 ns 0.18 16 tri Inductive Load, TJ = 125°C Eon IC = 20A, VGE = 15V ns mJ ns 21 ns 0.16 mJ td(off) VCE = 300V, RG = 5Ω 70 ns tfi Note 2 90 ns 0.33 mJ Eoff RthJC RthCS 0.56 °C/W TO-220 TO-247 0.50 0.21 °C/W °C/W Reverse Diode (SiC) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF Characteristic Values Min. Typ. Max. IF = 10A, VGE = 0V, Note 1 1.65 1.80 TJ = 125°C RthJC Notes 2.10 V V 1.10 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXGA30N60C3C1 TO-263 (IXGA) Outline Pins: 1 - Gate 2, 4 - Collector 3 - Emitter TO-220 (IXGP) Outline Pins: 1 - Gate 3 - Emitter 2, 4 - Collector TO-247 Outline 1 2 Dim. ∅P 3 e Pins: 1 - Gate 3 - Emitter 2 - Collector Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 © 2011 IXYS CORPORATION, All Rights Reserved Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 IXGP30N60C3C1 IXGH30N60C3C1 IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 40 180 VGE = 15V 13V 35 140 30 11V 13V 120 25 IC - Amperes IC - Amperes VGE = 15V 160 20 9V 15 10 100 11V 80 60 9V 40 7V 5 20 0 7V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 2 4 6 8 12 14 16 18 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 1.1 40 VGE = 15V 13V 11V 35 VGE = 15V 1.0 I VCE(sat) - Normalized 30 IC - Amperes 10 VCE - Volts VCE - Volts 9V 25 20 15 C = 40A 0.9 0.8 I C = 20A 0.7 10 I 0.6 5 C = 10A 7V 0 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 25 50 75 VCE - Volts 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.5 70 TJ = 25ºC 5.0 60 50 I C IC - Amperes VCE - Volts 4.5 = 40A 4.0 20A 40 TJ = 125ºC 25ºC - 40ºC 30 3.5 20 10A 3.0 10 0 2.5 7 8 9 10 11 12 13 14 15 5 VGE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 5.5 6 6.5 7 7.5 8 8.5 VGE - Volts 9 9.5 10 10.5 11 IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 Fig. 8. Gate Charge Fig. 7. Transconductance 24 16 TJ = - 40ºC 20 VCE = 300V 12 I G = 10mA I C = 20A 25ºC 16 125ºC VGE - Volts g f s - Siemens 14 12 8 10 8 6 4 4 2 0 0 0 10 20 30 40 50 60 70 80 0 5 10 Fig. 9. Capacitance 20 25 30 35 40 Fig. 10. Reverse-Bias Safe Operating Area 70 10,000 f = 1 MHz Capacitance - PicoFarads 15 QG - NanoCoulombs IC - Amperes 60 Cies 50 IC - Amperes 1,000 Coes 100 40 30 20 10 TJ = 125ºC RG = 5Ω dv / dt < 10V / ns Cres 0 100 10 0 5 10 15 20 25 30 35 40 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance for IGBT Z(th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved 0.1 1 10 IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 0.9 0.6 0.8 Eon - Eoff 0.8 --- Eoff 0.7 0.5 TJ = 125ºC , VGE = 15V C = 40A 0.5 0.4 0.4 0.3 0.3 0.2 I C = 20A 0.2 6 8 10 12 14 16 18 0.3 0.3 TJ = 25ºC 0.2 0 10 20 15 20 ---- tfi 0.6 0.5 I C = 40A 0.4 0.4 0.3 0.3 I C = 20A 0.2 t f i - Nanoseconds 0.5 120 VCE = 300V 140 100 I C = 40A 120 80 0.2 I 100 0.1 C = 20A t d(off) - Nanoseconds VCE = 300V td(off) - - - - TJ = 125ºC, VGE = 15V 160 E on - MilliJoules 60 0.1 0 25 35 45 55 65 75 85 95 105 115 80 0 125 10 12 14 16 18 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 160 t fi td(off) - - - - 100 TJ = 125ºC 100 70 80 60 60 50 40 40 TJ = 25ºC 20 30 0 20 20 25 30 35 40 td(off) - - - - 80 VCE = 300V 120 70 100 60 I C = 40A, 20A 80 50 60 40 40 30 20 25 IC - Amperes IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 20 125 t d(off) - Nanoseconds 80 t d(off) - Nanoseconds 120 15 tfi RG = 5Ω , VGE = 15V 90 VCE = 300V 20 90 140 RG = 5Ω , VGE = 15V 10 8 RG - Ohms 110 140 6 TJ - Degrees Centigrade 180 160 40 4 t f i - Nanoseconds Eoff - MilliJoules 40 140 0.7 RG = 5Ω , VGE = 15V t f i - Nanoseconds 35 180 0.8 0.6 30 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 0.8 Eon 25 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.2 0.1 RG - Ohms 0.7 0.4 0 0 4 TJ = 125ºC 0.4 0.1 0.1 0.1 0.5 Eon - MilliJoules 0.5 ---- VCE = 300V Eon - MilliJoules Eoff - MilliJoules I 0.6 Eon RG = 5Ω , VGE = 15V 0.6 E off - MilliJoules VCE = 300V 0.7 0.6 IXGA30N60C3C1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 90 60 30 tri 80 td(on) - - - - 50 = 40A 60 24 50 22 40 20 30 18 I C = 20A 20 16 10 6 8 10 12 14 16 18 TJ = 125ºC 40 20 30 18 TJ = 25ºC 20 16 10 14 0 14 4 22 VCE = 300V t r i - Nanoseconds t r i - Nanoseconds C td(on) - - - - RG = 5Ω , VGE = 15V 12 10 20 15 20 25 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature td(on) - - - 20 t r i - Nanoseconds 55 19 I C = 40A 45 18 35 17 I C = 20A 25 16 15 45 55 65 75 85 95 105 115 15 125 16 t d(on) - Nanoseconds VCE = 300V IF - Amperes RG = 5Ω , VGE = 15V 35 40 20 21 25 35 Fig. 21. Forward Current vs. Forward Voltage 75 tri 30 IC - Amperes RG - Ohms 65 t d(on) - Nanoseconds I 26 t d(on) - Nanoseconds VCE = 300V 24 tri 28 TJ = 125ºC, VGE = 15V 70 IXGP30N60C3C1 IXGH30N60C3C1 TJ = 25ºC TJ = 125ºC 12 8 4 0 0 0.5 1 TJ - Degrees Centigrade 1.5 2 2.5 3 VF - Volts Fig. 22. Maximum Transient Thermal Impedance for Diode 10 Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: G_30N60C3C1(4D)05-02-11-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.