IXGA30N60C3D4

IXGA30N60C3D4* IXGP30N60C3D4 GenX3TM 600V IGBTs w/ Diode *Obsolete Part Number High-Speed PT IGBTs for 40-100kHz Switching VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V A IC25 TC = 25°C 60 IC110 TC = 110°C 30 A ICM TC = 25°C, 1ms 150 A A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 (RBSOA) Clamped Inductive Load @ ≤ VCES PC TC = 25°C TJ 220 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10 seconds 260 °C Md Mounting Torque (TO-220) 1.13/10 Weight TO-220 TO-263 Nm/lb.in. 2.5 3.0 g g E C (Tab) TO-220AB (IXGP) G CE G = Gate S = Emitter C (Tab) D = Collector Tab = Collector Features Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Packages Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (TJ = 25°C Unless Otherwise Specified) Min. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V Typ. V 5.5 IGES VCE = 0V, VGE = ± 20V IC = 20A, VGE = 15V, Note 1 V 75 μA 500 μA TJ = 125°C VCE(sat) Applications Max. ±100 nA TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved 2.6 1.8 3.0 V V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100073A(05/11) IXGA30N60C3D4 IXGP30N60C3D4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 20A, VCE = 10V, Note 1 9 TO-263 Outline 16 S 915 pF 78 pF 32 pF 38 nC 8 nC Qgc 17 nC td(on) 16 ns Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge tri Eon td(off) tfi IC = 20A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 20A, VGE = 15V 26 ns 0.27 mJ 42 VCE = 300V, RG = 5Ω 0.09 td(on) 17 Eon td(off) tfi Inductive Load, TJ = 125°C IC = 20A, VGE = 15V VCE = 300V, RG = 5Ω Eoff ns 0.18 mJ ns 28 ns 0.44 mJ 70 ns 90 ns 0.33 mJ RthJC RthCS ns 47 Eoff tri 75 1 = Gate 2 = Collector 3 = Emitter 4 = Collector 0.56 °C/W TO-220 0.50 °C/W TO-220 Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF trr IRM IF = 10A, VGE = 0V, Note 1 IF = 10A, -diF/dt = 200A/μs VR = 300V Characteristic Values Min. Typ. Max. 3.0 TJ = 150°C TJ = 100°C 1.7 V V 60 ns TJ = 25°C TJ = 100°C 3 4 RthJC A A 1 = Gate 2 = Collector Pins: 1 - Gate 3 = Emitter 2.5 °C/W 2 - Drain Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXGA30N60C3D4 IXGP30N60C3D4 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 180 40 VGE = 15V 13V 35 140 30 11V 13V 120 25 IC - Amperes IC - Amperes VGE = 15V 160 20 9V 15 10 100 11V 80 60 9V 40 5 7V 20 0 7V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 2 4 6 8 12 14 16 18 20 Fig. 4. Dependence of VCE(sat) on JunctionTemperature Fig. 3. Output Characteristics @ T J = 125ºC 1.1 40 VGE = 15V 13V 11V 35 VGE = 15V 1.0 I VCE(sat) - Normalized 30 IC - Amperes 10 VCE - Volts VCE - Volts 9V 25 20 15 = 40A 0.9 0.8 I C = 20A 0.7 10 I 0.6 5 C C = 10A 7V 0.5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 25 3.2 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 70 5.5 TJ = 25ºC 60 5.0 50 I 4.0 C IC - Amperes VCE - Volts 4.5 = 40A 20A 10A 40 TJ = 125ºC 25ºC - 40ºC 30 3.5 20 3.0 10 2.5 0 7 8 9 10 11 12 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 13 14 15 5 6 7 8 VGE - Volts 9 10 11 IXGA30N60C3D4 IXGP30N60C3D4 Fig. 7. Transconductance Fig. 8. Gate Charge 24 16 TJ = - 40ºC I C = 20A 12 25ºC 16 VGE - Volts g f s - Siemens VCE = 300V 14 20 125ºC 12 I G = 10 mA 10 8 6 8 4 4 2 0 0 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 40 10,000 60 50 Cies 1,000 IC - Amperes Capacitance - PicoFarads f = 1 MHz Coes 100 40 30 20 TJ = 125ºC 10 Cres 0 100 10 0 5 10 15 20 25 30 35 40 RG = 5Ω dv / dt < 10V / ns 200 300 400 500 600 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.1 1 10 IXGA30N60C3D4 IXGP30N60C3D4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 0.8 Eon - Eoff 0.7 --- TJ = 125ºC , VGE = 15V 1.4 0.6 1.2 0.5 1.2 Eoff C = 40A 0.5 0.8 0.4 0.6 0.3 I C = 20A 0.2 6 8 10 12 14 16 18 0.4 E off - MilliJoules 1.0 I 0.8 TJ = 125ºC 0.3 0.6 0.2 0.4 0.1 0.2 0 0.4 TJ = 25ºC 15 20 1.4 t fi 0.3 0.6 0.2 0.4 t f i - Nanoseconds 0.8 140 100 I C = 40A 120 80 I 100 I C = 20A 45 55 65 75 85 95 105 115 40 4 6 8 10 110 100 140 70 80 60 60 50 40 40 TJ = 25ºC 20 30 0 20 25 30 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 35 40 td(off) - - - - 80 RG = 5Ω , VGE = 15V VCE = 300V t f i - Nanoseconds 100 20 20 120 70 100 60 I C = 40A, 20A 80 50 60 40 40 30 20 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 20 125 t d(off) - Nanoseconds 80 TJ = 125ºC 15 18 90 t fi 90 VCE = 300V 10 16 160 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - RG = 5Ω , VGE = 15V 120 14 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 180 140 12 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current t fi 60 80 0 125 TJ - Degrees Centigrade 160 = 20A 0.2 0 35 C t d(off) - Nanoseconds 0.4 120 VCE = 300V 1 I C = 40A td(off) - - - - TJ = 125ºC, VGE = 15V 160 VCE = 300V 25 40 140 1.2 0.1 35 180 E on - MilliJoules E off - MilliJoules ---- RG = 5Ω , VGE = 15V 0.5 30 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 0.7 Eon 25 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.2 0 10 20 RG - Ohms 0.6 1 E on - MilliJoules 0.6 E on - MilliJoules E off - MilliJoules ---- VCE = 300V VCE = 300V 4 Eon RG = 5Ω , VGE = 15V IXGA30N60C3D4 IXGP30N60C3D4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 90 t ri 80 td(on) - - - - 30 70 28 60 24 t ri TJ = 125ºC, VGE = 15V I C 24 = 40A 50 22 40 20 30 20 10 6 8 10 12 14 16 18 VCE = 300V 50 20 TJ = 125ºC 40 18 TJ = 25ºC 30 16 20 14 16 10 12 14 0 18 I C = 20A t r i - Nanoseconds t r i - Nanoseconds 60 4 22 10 10 20 t d(on) - Nanoseconds 26 VCE = 300V t d(on) - Nanoseconds 70 td(on) - - - - RG = 5Ω , VGE = 15V 15 20 25 30 35 40 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 75 21 20 I C = 40A 55 19 t ri td(on) - - - - RG = 5Ω , VGE = 15V 45 18 VCE = 300V 35 17 I C = 20A 25 t d(on) - Nanoseconds t r i - Nanoseconds 65 16 15 25 35 45 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_30N60C3(4D)05-02-11-A IXGA30N60C3D4 IXGP30N60C3D4 30 250 A nC 25 20 T VJ = 100°C 15 IF = 5 A 150 IF = 10 A 8 IRM Qr IF = 5 A A V R = 300 V 200 T VJ = 150°C IF 10 T VJ = 100°C IF = 20 A 6 I F = 10 A I F = 20 A 100 4 50 2 T VJ = 100°C 10 5 0 T VJ = 25°C 0 1 2 0 100 V 3 VF Fig. 21. Forward current IF versus VF Fig. 22. Reverse recovery charge Qr 2.0 ns V R = 300 V 400 600 A/μs 800 1000 -diF/dt 0.3 T VJ = 100°C μs I F = 10 A V FR t fr 0.2 40 IF = 5 A 80 I F = 10 A 1.0 I F = 20 A I RM 60 20 t fr V FR 0.5 Qr 0.0 200 Fig. 23. Peak reverse current IRM V trr Kf 0 60 T VJ = 100°C 100 1.5 0 A/μs 1000 -diF/dt V R = 300 V 0 40 40 80 120 C 160 0 200 T VJ 400 600 800 1000 A/μs 0 0 200 400 -diF/dt Fig. 24. Dynamic parameters Qr, IRM Fig. 25. Recovery time trr versus -diF/dt 10 0.0 600 A/μs 800 1000 diF/dt Fig. 26. Peak forward voltage VFR and Constants for ZthJC calculation: K/W i 1 1 2 Z thJC 0.1 0.01 0.001 0.00001 0.1 DSEP 8-06B 0.0001 0.001 0.01 Fig. 27. Transient thermal resistance junction-to-case NOTE: Fig. 2 to Fig. 6 shows typical values © 2011 IXYS CORPORATION, All Rights Reserved 0.1 s t 1 Rthi (K/W) ti (s) 1.449 0.5578 0.0052 0.0003 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.