IXGA36N60A3

IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 GenX3TM 600V IGBT VCES = 600V IC110 = 36A VCE(sat)  1.4V Ultra Low Vsat PT IGBT for up to 5kHz Switching TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 TC = 25°C TC = 110°C 96 36 A A ICM TC  = 25°C, 1ms 200 A SSOA VGE = 15V, TVJ = 125°C, RG = 5 ICM = 60 A (RBSOA) Clamped Inductive Load VCE  VCES PC TC = 25°C 220 TJ W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C G C E TO-247 (IXGH) G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250µA, VGE = 0V 600 VGE(th) IC = 250µA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 30A, VGE = 15V, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved C E G = Gate E = Emitter C (Tab) C = Collector Tab = Collector Features  TL TSOLD C (Tab)   Optimized for Low Conduction Losses Square RBSOA International Standard Packages Advantages   High Power Density Low Gate Drive Requirement Applications  V   5.5 V 25 250 µA µA  ±100 nA  1.4 V     Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100006B(1/20) IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 30A, VCE = 10V, Note 1 25 Cies Coes S 2380 pF 115 pF Cres 30 pF Qg 80 nC 12 nC 36 nC 18 ns Qge VCE = 25V, VGE = 0V, f = 1MHz 42 IC = 30A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 400V, RG = 5 Note 2 Eoff td(on) tri Eon Inductive load, TJ = 125°C IC = 30A, VGE = 15V td(off) VCE = 400V, RG = 5 tfi Note 2 Eoff 23 ns 0.74 mJ 330 ns 325 ns 3.00 mJ 18 ns 25 ns 1.50 mJ 500 ns 500 ns 5.30 mJ 0.56 C/W RthJC RthCS Notes: TO-220 TO-247 0.50 0.21 C/W C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 60 300 VGE = 15V 13V 11V 9V 250 40 I C - Amperes I C - Amperes 50 VGE = 15V 13V 11V 7V 30 20 9V 200 150 7V 100 10 50 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 0 2 4 6 60 1.4 VGE = 15V 13V 11V 9V 12 14 16 125 150 VGE = 15V 1.3 I C = 60A VCE(sat) - Normalized I C - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 50 8 VCE - Volts VCE - Volts 40 7V 30 20 10 1.2 1.1 I C = 30A 1.0 0.9 0.8 5V 0 I C = 15A 0.7 0.0 0.5 1.0 1.5 2.0 -50 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 4.0 o TJ = 25 C 3.5 180 160 140 I C - Amperes VCE - Volts 3.0 I C = 60A 30A 15A 2.5 2.0 1.5 1.0 120 100 80 60 TJ = 125 C 40 25 C o o o - 40 C 20 0.5 0 5 6 7 8 9 10 11 12 13 VGE - Volts © 2020 IXYS CORPORATION, All Rights Reserved 14 15 3.5 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 8.5 IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 o TJ = - 40 C 70 60 I C = 30A I G = 10 mA 12 o 25 C 50 VGE - Volts g f s - Siemens VCE = 300V 14 o 125 C 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 10 20 30 40 50 60 70 80 30 35 40 QG - NanoCoulombs I C - Amperes Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 70 10,000 f = 1 MHz Capacitance - PicoFarads 60 I C - Amperes 50 40 30 20 o TJ = 125 C Cies 1,000 Coes 100 RG = 5Ω dv / dt < 10V / ns 10 Cres 0 10 100 200 300 400 500 600 0 5 10 VCE - Volts 15 20 25 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.1 1 10 IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 12 11 4.0 2.0 Eoff Eon RG = 5ΩVGE = 15V 10 Eoff 9 3.2 I C = 60A Eon VCE = 400V I C = 60A 2.4 6 E off - MilliJoules VCE = 400V 8 7 1.2 I C = 30A 5 0.8 0.8 3 0.4 0.0 120 1 1.6 I C = 30A 4 I C = 15A 2 0 20 40 60 80 100 I C = 15A 25 35 45 55 RG - Ohms Eoff - MilliJoules TJ = 25 C td(off) 1 25 30 35 40 45 1100 VCE = 400V 750 900 I C = 60A 650 700 I C = 15A, 30A 3 50 55 0.4 550 0.0 450 500 0 60 20 40 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 600 540 420 450 360 o TJ = 25 C 300 250 240 30 35 40 45 50 I C - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 55 60 t f - Nanoseconds t f - Nanoseconds o TJ = 125 C 560 VCE = 400V 600 480 ` I C = 15A, 30A, 60A 500 400 400 320 300 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 240 125 t d(off) - Nanoseconds 480 td(off) RG = 5Ω, VGE = 15V 700 t d(off) - Nanoseconds 650 25 640 tf VCE = 400V 20 300 120 100 800 td(off) RG = 5Ω, VGE = 15V 750 80 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 850 tf 60 RG - Ohms I C - Amperes 15 0.0 125 t d(off) - Nanoseconds 0.8 o E on - MilliJoules o TJ = 125 C t f - Nanoseconds 1.6 1.2 350 115 o 7 550 105 TJ = 125 C, VGE = 15V 850 VCE = 400V 20 95 1300 tf Eon RG = 5ΩVGE = 15V 15 85 950 2.0 5 75 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 11 9 65 TJ - Degrees Centigrade Fig. 14. Inductive Switching Energy Loss vs. Collector Current Eoff 1.6 Eon - MilliJoules TJ = 125 C , VGE = 15V E on - MilliJoules E off - MilliJoules o IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature 150 110 tr 65 27 td(on) o TJ = 125 C, VGE = 15V 70 I C = 30A 50 I C = 15A 30 30 25 I C = 60A 45 tr 23 td(on) RG = 5Ω, VGE = 15V 35 21 VCE = 400V I C = 30A 25 19 15 t d(on) - Nanoseconds 90 60 55 90 I C = 60A t r - Nanoseconds VCE = 400V t d(on) - Nanoseconds t r - Nanoseconds 120 17 I C = 15A 0 0 20 40 60 80 10 120 100 5 25 RG - Ohms 35 45 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 60 25 tr td(on) 23 RG = 5Ω, VGE = 15V VCE = 400V 40 21 o TJ = 125 C o TJ = 25 C 30 19 20 17 10 t d(on) - Nanoseconds t r - Nanoseconds 50 15 15 20 25 30 35 40 45 50 55 60 I C - Amperes IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_36N60A3(55) 7-22-13-B IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 TO-263 Outline 1 - Gate 2,4 - Collector 3 - Emitter TO-220 Outline 1 - Gate 2,4 - Collector 3 - Emitter TO-247 Outline 1 - Gate 2,4 - Collector 3 - Emitter © 2020 IXYS CORPORATION, All Rights Reserved IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.