IXGA8N100

IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE(sat) = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 16 A IC90 TC = 90°C ICM TC = 25°C, 1 ms SSOA VGE = 15 V, TVJ = 125°C, RG = 120 Ω (RBSOA) Clamped inductive load PC TC = 25°C 8 A 32 A ICM = 16 A TO-220AB (IXGP) G C E TO-263 AA (IXGA) @ 0.8 VCES G 54 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque with screw M3 Mounting torque with screw M3.5 Weight TO-220 TO-263 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g E C (TAB) Features • International standard packages JEDEC TO-220AB and TO-263AA • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 1 mA, VGE = 0 V 1000 VGE(th) IC = 250 µA, VCE = VGE ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = ICE90, VGE = 15V © 2003 IXYS All rights reserved V 2.5 5.0 V TJ = 25°C 25 µA TJ = 125°C 250 µA ±100 nA 2.7 V 2.2 • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies discharge • Capacitor Advantages • Easy to mount with one screw • Reduces assembly time and cost • High power density DS98565C(12/03) IXGA 8N100 IXGP 8N100 TO-220 AB Dimensions Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = IC90 VCE = 10 V 4 7.6 S 40 A Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IC(on) VGE = 10 V, VCE = 10V 595 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc pF 34 pF 10 pF 26.5 nC 4.8 nC 8.5 nC td(on) Inductive load, TJ = 25°°C 15 ns tri IC = IC90, VGE = 15 V 30 ns td(off) VCE = 800 V, RG = Roff = 120 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 120 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG RthJC RthCK TO-220 600 1000 ns 390 900 ns 2.3 5.0 mJ 15 ns 30 ns 0.5 mJ 800 ns 630 ns 3.7 mJ 2.3 K/W 0.5 K/W Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side TO-263 AA Outline 1. 2. 3. 4. Min. Recommended Footprint (Dimensions in inches and mm) Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGA 8N100 IXGP 8N100 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 70 16 VGE = 15V 13V 11V 14 9V 50 7V I C - Amperes I C - Amperes 12 10 8 6 4 VGE = 15V 13V 60 11V 40 9V 30 7V 20 5V 10 2 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 2 4 6 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 16 12 16 18 20 9V V C E (sat)- Normalized 10 V GE = 15V 1.4 7V 8 6 4 I C = 16A 1.3 1.2 1.1 I C = 8A 1.0 0.9 I C = 4A 5V 2 0.8 0 0.7 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 V CE - Volts 0 25 50 75 100 125 150 6.5 7 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 16 8 TJ = 25ºC 7 14 12 6 I C = 16A 8A 4A 5 I C - Amperes VC E - Volts 14 Fig. 4. Dependence of V CE(sat) on Tem perature 12 I C - Amperes 10 1.5 VGE = 15V 13V 11V 14 8 V C E - Volts 4 3 10 8 6 TJ = 125ºC 25ºC -40ºC 4 2 2 1 0 5 6 7 8 9 10 11 12 V G E - Volts © 2003 IXYS All rights reserved 13 14 15 16 17 3 3.5 4 4.5 5 5.5 V G E - Volts 6 IXGA 8N100 IXGP 8N100 Fig. 8. Gate Charge Fig. 7. Transconductance 15 10 VCE = 500V I C = 8A I G = 10mA 9 TJ = -40ºC 25ºC 125ºC 8 g f s - Siemens 7 12 VG E - Volts 6 5 4 9 6 3 3 2 1 0 0 0 2 4 6 8 10 12 14 16 18 0 3 6 I C - Amperes 9 12 15 18 21 24 27 Q G - nanoCoulombs Fig. 9. Capacitance 1000 Capacitance - p F f = 1 MHz C ies 100 C oes 10 C res 1 0 5 10 15 20 25 30 35 40 V C E - Volts Fig. 10. Maxim um Transient Therm al Resistance 2.4 2.2 R (th) J C - (ºC/W) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 1 10 Pulse Width - milliseconds 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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