IXGB200N60B3

IXGB200N60B3 GenX3TM 600V IGBT VCES = IC110 = VCE(sat) ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching PLUS264TM (IXGB) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C (chip capability) 200 A ICM TC = 25°C, 1ms 600 A SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 300 A (RBSOA) Clamped inductive load @ VCE ≤ 600V PC TC = 25°C 1250 W -55 ... +150 °C TJM 150 °C z Tstg -55 ... +150 °C z TJ TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C FC Mounting force 30..120/6.7..27 N/lb. 10 g Weight 600V 200A 1.5V 183ns G C (TAB) E G = Gate E = Emitter C = Collector TAB = Collector Features NPT IGBT technology Low switching losses z Low tail current z No latch up z Short circuit capability z Positive temperature coefficient for easy paralleling z MOS input, voltage controlled z Optional ultra fast diode z International standard package Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE ICES VCE = VCES VGE = 0V Characteristic Values Min. Typ. Max. 600 3.0 TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 IC = 200A TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 1.35 1.65 1.75 z 5.0 V V 25 5.0 μA mA z ±100 nA z 1.50 V V V z Space savings High power density power supplies Low gate charge results in simple drive requirement Applications z z z High Frequency Inverters UPS and Welding AC and DC Motor Controls Power Supplies and Drivers for Solenoids, Relays and Connectors PFC Circuits Battery Chargers DS99929A(05/08) IXGB200N60B3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 95 ISOPLUS264TM (IXGB) Outline 160 S 26 1260 97 nF pF pF 750 nC 115 245 nC nC td(on) 44 ns tri Eon 83 1.6 ns mJ Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 100A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°°C IC = 100A, VGE = 15V 310 450 ns 183 300 ns Eoff 2.9 4.5 mJ td(on) tri Eon td(off) tfi Eoff 42 80 2.4 430 300 4.2 ns ns mJ ns ns mJ 0.13 0.10 °C/W °C/W td(off) tfi VCE = 300V, RG = 1Ω Inductive load, TJ = 125°°C IC = 100A, VGE = 15V VCE = 300V, RG = 1Ω RthJC RthCS Note: Bottom heatsink meets 2500Vrms Isolation to the other Ref: IXYS CO 0128 Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGB200N60B3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 350 VGE = 15V 11V 9V 180 160 140 120 100 80 200 150 6V 6V 60 7V 250 7V IC - Amperes IC - Amperes VGE = 15V 11V 9V 300 100 40 20 50 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1 2 3 160 7 8 9 125 150 VGE = 15V 1.20 VCE(sat) - Normalized 9V 140 IC - Amperes 6 1.25 VGE = 15V 13V 11V 180 5 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 200 4 VCE - Volts VCE - Volts 120 7V 100 80 60 I C = 200A I C = 150A I C = 100A 1.15 1.10 1.05 1.00 0.95 0.90 40 20 0.85 5V 0 0.80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 VCE - Volts 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 160 3.4 3.2 TJ = 25ºC 140 3.0 120 IC - Amperes 2.8 VCE - Volts 2.6 I 2.4 2.2 C = 200A 150A 100A 2.0 1.8 TJ = 125ºC 25ºC - 40ºC 100 80 60 40 1.6 20 1.4 1.2 0 5 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 3.5 4.0 4.5 5.0 VGE - Volts 5.5 6.0 6.5 IXGB200N60B3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 250 TJ = - 40ºC 225 200 25ºC I C = 100A I G = 10mA 12 175 125ºC 150 VGE - Volts g f s - Siemens VCE = 300V 14 125 100 10 8 6 75 4 50 2 25 0 0 0 20 40 60 80 100 120 140 160 180 200 0 100 200 IC - Amperes 300 400 500 600 700 800 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 100,000 350 10,000 250 IC - Amperes Capacitance - PicoFarads 300 Cies 1,000 Coes 200 150 100 100 TJ = 125ºC 50 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 RG = 1Ω dV / dt < 10V / ns 0 100 200 VCE - Volts 300 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGB200N60B3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 4.5 3.5 5.0 3.0 Eoff 4.5 = 100A 3.0 --- - MilliJoules 3.0 Eon - 2.0 TJ = 125ºC , VGE = 15V VCE = 300V 2.5 1.5 I C = 50A 2.0 1.0 1.5 2 3 4 5 6 7 8 9 3.0 2.5 1.5 2.0 1.2 TJ = 25ºC 1.5 0.6 0.5 0.3 50 10 55 60 65 70 4.5 2.0 1.2 1.5 0.9 I C = 50A 1.0 0.5 65 75 85 95 105 115 - MilliJoules 1.5 t f - Nanoseconds on 1.8 2.5 55 1300 290 I C 800 270 700 260 I C 600 = 50A 500 240 0.3 125 400 230 300 1 2 3 4 5 500 340 300 480 320 tf 280 460 300 RG = 1Ω, VGE = 15V 440 420 td(off) - - - - RG = 1Ω , VGE = 15V 400 VCE = 300V 380 180 360 TJ = 25ºC 340 80 85 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 90 95 400 I C = 50A, 100A 380 360 340 160 320 300 120 75 420 180 140 70 440 200 300 100 65 460 VCE = 300V 220 120 60 10 480 240 320 55 td(off) - - - - 260 140 50 9 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 280 125 t d(off) - Nanoseconds 260 160 8 500 280 t f - Nanoseconds TJ = 125ºC 200 7 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 320 220 6 RG - Ohms t d(off) - Nanoseconds t f - Nanoseconds 900 = 100A 280 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 1100 1000 250 0.6 1200 300 TJ - Degrees Centigrade 240 0.0 100 t d(off) - Nanoseconds I C = 100A 45 95 td(off) - - - TJ = 125ºC, VGE = 15V VCE = 300V 310 2.1 3.0 35 90 tf 320 2.4 VCE = 300V 25 85 330 E Eoff - MilliJoules ---- RG = 1Ω , VGE = 15V 3.5 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.7 4.0 75 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eon 0.9 1.0 RG - Ohms Eoff 1.8 0.0 0.5 1 2.1 TJ = 125ºC - MilliJoules on Eoff 2.4 VCE = 300V 3.5 on 2.5 2.7 E 3.5 ---- RG = 1Ω , VGE = 15V 4.0 E Eoff - MilliJoules C Eoff - MilliJoules I 4.0 Eon IXGB200N60B3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 150 td(on) - - - - TJ = 125ºC, VGE = 15V C = 100A 90 80 I C = 50A 4 5 6 7 8 9 60 42 TJ = 25ºC, 125ºC 40 40 38 20 30 50 3 44 40 60 2 70 50 70 30 46 VCE = 300V 50 10 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds 100 I t d(on) - Nanoseconds 110 td(on) - - - - RG = 1Ω , VGE = 15V 80 120 VCE = 300V 1 48 tr t r - Nanoseconds tr 130 t r - Nanoseconds 90 140 36 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 90 48 80 46 t r - Nanoseconds 70 tr 44 td(on) - - - - RG = 1Ω , VGE = 15V 60 42 VCE = 300V 50 40 I C = 50A 40 t d(on) - Nanoseconds I C = 100A 38 30 25 35 45 55 65 75 85 95 105 115 36 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_200N60B3(97)3-28-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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