IXGF20N250

High Voltage IGBT For Capacitor Discharge Applications IXGF20N250 VCES = 2500V = 23A IC25 VCE(sat) ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 23 A IC90 TC = 90°C 14 A ICM TC = 25°C, VGE = 19V, 1ms 10ms 105 55 A A SSOA VGE = 15V, TVJ = 125°C, RG = 20Ω ICM = 60 A (RBSOA) Clamped Inductive Load 1500 V PC TC = 25°C 100 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 20..120 / 4.5..27 Nm/lb.in. 4000 V~ 6 g TJ TL TSOLD 1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute Maximum Ratings Weight 1 2 Isolated Tab 5 1 = Gate 2 = Emitter 5 = Collector Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Applications Capacitor Discharge Pulser Circuits Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 2500 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 20A, VGE = 15V, Note 1 © 2012 IXYS CORPORATION, All Rights Reserved Advantages V 5.0 V 10 750 μA μA ±100 nA 3.1 V High Power Density Easy to Mount DS99999C(06/12) IXGF20N250 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 20A, VCE = 10V, Note 1 8 IC(ON) VGE = 20V, VCE = 15V, Note 1 ISOPLUS i4-PakTM (HV) Outline 13 S 190 A 1190 pF 53 pF Cres 18 pF Qg 53 nC 8 nC 22 nC 57 ns 160 136 ns ns 930 ns 0.15 30 1.25 °C/W °C/W °C/W Cies Coes Qge VCE = 15V, VGE = 25V, f = 1MHz IC = 20A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf Resistive Switching Times IC = 40A, VGE = 15V VCE = 1250V, RG = 10Ω RthJC RthCS RthJA Pin 1 = Gate Pin 2 = Emitter Pin 3 = Collector Tab 4 = Isolated Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGF20N250 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 80 240 VGE = 25V 19V 15V 13V 70 23V 200 21V 19V 160 11V 50 IC - Amperes IC - Amperes 60 VGE = 25V 40 9V 30 17V 15V 120 13V 80 11V 20 7V 40 10 9V 5V 7V 0 0 0 1 2 3 4 5 0 6 10 15 20 25 VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 30 2.4 80 VGE = 25V 21V 17V 15V 60 VGE = 15V 2.2 2.0 13V VCE(sat) - Normalized 70 IC - Amperes 5 VCE - Volts 11V 50 40 9V 30 20 7V I C = 80A I C 1.8 1.6 1.4 1.2 = 40A 1.0 0.8 10 I 0.6 5V 0 C = 20A 0.4 0 1 2 3 4 5 6 7 8 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 9 90 TJ = 25ºC 8 80 TJ = - 40ºC 25ºC 70 I C = 80A IC - Amperes VCE - Volts 7 6 5 40A 4 60 125ºC 50 40 30 20 3 10 20A 2 0 6 8 10 12 14 16 18 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 20 22 24 26 3 4 5 6 7 8 9 10 VGE - Volts 11 12 13 14 15 IXGF20N250 Fig. 7. Transconductance Fig. 8. Gate Charge 16 18 TJ = - 40ºC 16 14 25ºC 12 125ºC 10 12 VGE - Volts g f s - Siemens VCE = 1000V 14 10 8 6 I C = 20A I G = 10mA 8 6 4 4 2 2 0 0 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 IC - Amperes 20 25 30 35 40 45 50 55 QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 10,000 70 f = 1 MHz Capacitance - PicoFarads 60 IC - Amperes 50 40 30 20 Cies 1,000 100 Coes TJ = 125ºC 10 0 250 RG = 20Ω dv / dt < 10V / ns Cres 10 500 750 1000 1250 1500 VCE - Volts 10.00 1750 2000 2250 0 2500 5 10 15 Fig. 13. Maximum Transient Thermal Impedance 20 25 30 35 40 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aaa 2.00 1.00 Z(th)JC - ºC / W D = 0.50 D = 0.20 D = tp / T D = 0.10 0.10 tp D = 0.05 D = 0.02 T D = 0.01 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGF20N250 Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 13. Resistive Turn-on Rise Time vs. Collector Current 400 400 RG = 10Ω , VGE = 15V RG = 10Ω , VGE = 15V 350 VCE = 1250V 350 C = 80A 300 t r - Nanoseconds t r - Nanoseconds I VCE = 1250V 300 250 200 TJ = 125ºC 250 200 TJ = 25ºC 150 I 150 C = 40A 100 50 100 25 35 45 55 65 75 85 95 105 115 20 125 30 40 50 1600 400 tf td(on) - - - - 350 1200 300 = 40A 1000 250 800 200 I C = 80A 600 150 400 100 200 50 0 0 50 100 150 200 250 300 350 400 450 t f - Nanoseconds t r - Nanoseconds C t d(on) - Nanoseconds I 160 tf VCE = 1250V 1000 800 120 400 110 0 25 35 45 55 170 85 95 105 115 90 125 1200 140 1000 130 TJ = 125ºC 800 120 600 110 400 TJ = 25ºC 0 50 60 IC - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 70 80 td(off) - - - - 1800 TJ = 125ºC, VGE = 15V 1600 1600 VCE = 1250V I C = 40A 1400 1400 1200 1200 1000 1000 800 800 600 600 I C = 80A 100 400 400 90 200 200 80 0 0 50 100 150 200 250 300 350 400 450 t d(off) - Nanoseconds 150 t f - Nanoseconds VCE = 1250V 2000 tf 1800 160 1400 40 75 2000 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 10Ω, VGE = 15V 30 65 Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance 180 tf 20 100 I C = 80A TJ - Degrees Centigrade 2000 200 130 600 Fig. 16. Resistive Turn-off Switching Times vs. Collector Current 1600 140 I C = 40A RG - Ohms 1800 150 RG = 10Ω, VGE = 15V 200 0 500 td(off) - - - - t d(off) - Nanoseconds VCE = 1250V 80 1400 TJ = 125ºC, VGE = 15V 1200 70 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 1400 60 IC - Amperes TJ - Degrees Centigrade 0 500 RG - Ohms IXYS REF: G_20N250(4P)6-07-12-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.