IXGF25N250

High Voltage IGBT IXGF25N250 VCES = 2500V = 30A IC25 VCE(sat) ≤ 2.9V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 30 A IC110 TC = 110°C ICM TC = 25°C, VGE = 20V, 1ms 15 A 200 A A SSOA VGE = 20V, TVJ = 125°C, RG = 20Ω ICM = 240 (RBSOA) Clamped Inductive Load 0.5 • VCES PC TC = 25°C 114 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 20..120/4.5..27 Nm/lbin. 2500 V~ 5 g TJ TL TSOLD 1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 minute Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IC = 250µA, VGE = 0V 2500 VGE(th) IC = 250µA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V, Note 2 TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC IC = 25A, VGE = 15V, Note 1 = 75A © 2009 IXYS CORPORATION, All Rights Reserved 2 5 ISOLATED TAB 1 = Gate 2 = Emitter 5 = Collector Features UL Recognized Package Electrically Isolated Tab High Peak Current Capability Low Saturation Voltage MOS Gate Turn-On - Drive Simplicity Rugged NPT Structure Molding Epoxies Meet UL 94 V-0 Flammability Classification Applications Capacitor Discharge Pulser Circuits Characteristic Values Min. Typ. Max. BVCES 1 V 5.0 V 50 µA 1 mA ±100 nA 2.9 5.2 V V Advantages High Power Density Easy to Mount DS99829B(05/09) IXGF25N250 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 50A, VCE = 10V, Note 1 16 IC(ON) VGE = 15V, VCE = 20V, Note 1 26 S 240 A 2970 pF 98 pF Cres 36 pF Qg 75 nC 15 nC 30 nC 68 ns 233 ns 209 ns 200 ns 0.15 30 1.10 °C/W °C/W °C/W Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 50A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf Resistive Switching Times IC = 50A, VGE = 15V VCE = 1250V, RG = 5Ω RthJC RthCS RthJA ISOPLUS i4-PakTM (HV) (IXGF) Outline Notes: 1. Pulse Test, t < 300µs; Duty Cycle, d < 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGF25N250 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 150 250 VGE = 25V 20V 135 120 200 15V 175 90 IC - Amperes 105 IC - Amperes VGE = 25V 20V 225 15V 150 10V 75 125 60 100 45 75 30 50 15 25 0 10V 0 0 1 2 3 4 5 6 7 8 0 2 4 6 8 Fig. 3. Output Characteristics @ 125ºC 200 2.2 160 VCE(sat) - Normalized IC - Amperes 14 16 18 20 VGE = 15V 2.0 140 15V 120 100 80 10V 60 I 1.8 C = 150A 1.6 I 1.4 C = 100A 1.2 I 1.0 40 0.8 20 0.6 0 C = 50A 0.4 0 2 4 6 8 10 12 14 16 -50 -25 0 VCE - Volts 25 50 75 100 125 150 12 13 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 10 Fig. 6. Input Admittance 200 VGE = 15V 180 9 TJ = - 40ºC 25ºC 125ºC 160 8 140 I 7 C IC - Amperes VCE - Volts 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.4 VGE = 25V 20V 180 10 VCE - Volts VCE - Volts = 150A 120 100 6 I C = 100A 80 60 5 40 4 I C = 50A 20 3 0 7 8 9 10 11 12 13 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 14 15 16 17 4 5 6 7 8 9 10 11 VGE - Volts IXYS REF: G_25N250(5P-P528)4-21-08-E IXGF25N250 Fig. 7. Transconductance Fig. 8. Gate Charge 36 16 TJ = - 40ºC 33 30 27 I C = 50A I G = 10 mA 12 25ºC 24 10 21 VGE - Volts g f s - Siemens VCE = 1250V 14 125ºC 18 15 8 6 12 9 4 6 2 3 0 0 0 20 40 60 80 100 120 140 160 180 200 0 10 20 IC - Amperes 30 40 50 60 70 80 30 35 40 QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 10000 280 f = 1 MHz Capacitance - PicoFarads 240 IC - Amperes 200 160 120 80 40 0 250 TJ = 125ºC Cies 1000 Coes 100 RG = 10Ω dV / dt < 10V / ns Cres 10 500 750 1000 1250 1500 1750 2000 2250 2500 0 5 10 15 20 25 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 10.00 Z ( t h ) JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 IXGF25N250 Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature 640 RG = 5Ω I VGE = 15V 560 VCE = 1250V C = 150A 650 RG = 5Ω 600 VGE = 15V TJ = 125ºC VCE = 1250V 550 t r - Nanoseconds 600 700 t r - Nanoseconds 680 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current 520 500 480 440 450 I 400 C = 50A 400 360 TJ = 25ºC 350 320 300 280 250 240 200 200 25 35 45 55 65 75 85 95 105 115 125 50 60 70 80 90 TJ - Degrees Centigrade Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 124 245 680 120 240 660 116 235 t r - Nanoseconds 620 108 600 104 td(on) - - - - 100 TJ = 125ºC, VGE = 15V 560 96 VCE = 1250V 540 92 520 I C = 50A 500 480 4 6 8 10 12 14 16 18 tf 230 225 td(off) - - - - 170 160 210 130 195 120 80 190 25 20 35 45 55 65 75 85 95 105 115 110 125 TJ = 125ºC 200 150 135 190 120 180 105 170 110 120 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 130 140 90 150 Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance 260 255 tf 250 TJ = 125ºC, VGE = 15V 280 td(off) - - - - 265 250 VCE = 1250V 245 t f - Nanoseconds t f - Nanoseconds 165 TJ = 25ºC 100 140 235 240 220 235 205 230 190 I C = 150A, 50A 225 175 220 160 215 145 210 130 205 115 200 t d ( o f f ) - Nanoseconds 220 90 150 I C = 150A, 50A 205 200 180 80 180 I C = 50A, 150A VCE = 1250V 84 t d ( o f f ) - Nanoseconds 230 70 190 88 195 VCE = 1250V 60 200 td(off) - - - - 215 210 RG = 5Ω, VGE = 15V 50 220 220 225 210 150 TJ - Degrees Centigrade 260 240 140 RG = 5Ω, VGE = 15V Fig. 16. Resistive Turn-off Switching Times vs. Collector Current tf 130 210 RG - Ohms 250 120 t d ( o f f ) - Nanoseconds 112 I C = 150A t d ( o n ) - Nanoseconds 640 580 110 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature t f - Nanoseconds 700 tr 100 IC - Amperes 100 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: G_25N250(5P-P528)4-21-08-E Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.