IXGF25N300

High Voltage IGBT IXGF25N300 VCES = 3000V = 27A IC25 VCE(sat) ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 27 A IC90 TC = 90°C ICM TC = 25°C, VGE = 20V, 1ms SSOA VGE = 20V, TVJ = 125°C, RG = 5Ω (RBSOA) Clamped Inductive Load PC TC = 25°C Maximum Ratings 16 A 140 A ICM = 160 A W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 20..120/4.5..27 Nm/lb-in. 4000 V~ 5 g TJ 1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute 2 Isolated Tab 5 1 = Gate 2 = Emitter 5 = Collector VCE ≤ 0.8 • VCES 114 TL TSOLD 1 Weight Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8 • VCES, VGE = 0V Note 2 ,TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC IC = 25A, VGE = 15V, Note 1 = 75A © 2009 IXYS CORPORATION, All Rights Reserved Capacitor Discharge Pulser Circuits Characteristic Values Min. Typ. Max. 3000 3.0 V 5.0 V 50 μA 1 mA ±100 nA 3.0 5.5 V V Advantages High Power Density Easy to Mount DS99995B(11/09) IXGF25N300 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 50A, VCE = 10V, Note 1 16 IC(ON) VGE = 15V, VCE = 20V, Note 1 ISOPLUS i4-PakTM (HV) Outline 26 S 240 A 2970 pF 98 pF Cres 36 pF Qg(on) 75 nC 15 nC 30 nC 70 ns 240 ns 220 ns 500 ns 0.15 30 1.10 °C/W °C/W °C/W Cies Coes Qge VCE = 15V, VGE = 20V, f = 1MHz IC = 50A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf Resistive Switching Times IC = 25A, VGE = 15V VCE = 1500V, RG = 5Ω RthJC RthCS RthJA Pin 1 = Gate Pin 2 = Emitter Pin 3 = Collector Tab 4 = Isolated Notes: 1. Pulse test, t < 300μs, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.