IXGF30N400

Not For New Designs High Voltage IGBT For Capacitor Discharge Applications IXGF30N400 VCES = 4000V IC25 = 30A VCE(sat)  3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 4000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 30 A IC110 TC = 110°C 15 A ICM TC = 25°C, VGE = 20V, 1ms 360 A SSOA VGE = 20V, TVJ = 125°C, RG = 2 ICM = 300 A (RBSOA) Clamped Inductive Load PC TC = 25°C TJ Maximum Ratings VCE  0.8 • VCES 160 W -55 ... +150 °C 1  150 °C  -55 ... +150 °C  300 260 °C °C 20..120 / 4.5..27 Nm/lb.in. 4000 V~ 5 g FC Mounting Force VISOL 50/60Hz, 1 minute Weight 5 = Collector Features Tstg Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Isolated Tab 5 1 = Gate 2 = Emitter TJM TL TSOLD 2    Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages  High Power Density Easy to Mount  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 4000 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 100°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC IC = 30A, VGE = 15V, Note 1 = 90A © 2020 IXYS CORPORATION, All Rights Reserved V 5.0 V 50 A 3 mA ±200 nA 3.1 5.2 V V Applications  Capacitor Discharge Pulser Circuits  DS99978D(2/20) IXGF30N400 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs IC = 30A, VCE = 10V, Note 1 IC(ON) VGE = 15V, VCE = 20V, Note 1 Characteristic Values Min. Typ. Max. 14 Cies Coes 23 S 360 A 3040 pF 95 pF 30 pF 135 nC 22 nC 50 nC 55 ns 146 ns 210 ns 514 ns 0.15 30 0.78 °C/W °C/W °C/W VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = 30A, VGE = 15V, VCE = 600V Qgc td(on) tr td(off) tf Resistive Switching Times IC = 30A, VGE = 15V, VCE = 1250V, RG = 2 RthJC RthCS RthJA Notes: 1. Pulse test, t < 300s, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGF30N400 Not For New Designs Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 400 60 VGE = 15V 13V 11V 50 320 13V 280 I C - Amperes 9V 40 I C - Amperes VGE = 15V 360 30 7V 20 240 200 11V 160 120 9V 80 10 7V 40 5V 0 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 VCE - Volts Fig. 3. Output Characteristics @ TJ = 125ºC VGE = 15V 13V 11V 18 20 22 24 26 28 30 VGE = 15V 2.0 1.8 V CE(sat) - Normalized 9V I C - Amperes 16 Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.2 60 50 14 VCE - Volts 40 7V 30 20 1.6 I C = 60A 1.4 I C = 30A 1.2 1.0 10 5V 0.8 0 I C = 15A 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -50 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 75 100 125 150 Fig. 6. Input Admittance 6.0 80 5.5 70 TJ = 25ºC 5.0 60 4.0 I C - Amperes 4.5 V CE - Volts 50 TJ - Degrees Centigrade I C = 60A 3.5 3.0 50 40 TJ = 125ºC 25ºC - 40ºC 30 30A 20 2.5 2.0 10 15A 0 1.5 5 6 7 8 9 10 11 VGE - Volts © 2020 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 IXGF30N400 Fig. 8. Gate Charge Fig. 7. Transconductance 16 40 TJ = - 40ºC 30 25ºC 25 125ºC I C = 30A I G = 10mA 12 VGE - Volts g f s - Siemens V CE = 600V 14 35 20 15 10 8 6 10 4 5 2 0 0 0 10 20 30 40 50 60 70 80 90 0 20 40 I C - Amperes 60 80 100 120 140 QG - NanoCoulombs Fig. 10. Capacitance Fig. 9. Reverse-Bias Safe Operating Area 350 10,000 Capacitance - PicoFarads 300 I C - Amperes 250 Cies 1,000 200 150 100 TJ = 125ºC Coes 100 RG = 2Ω dV / dt < 10V / ns 50 Cres f = 1 MHz 10 0 400 800 1200 1600 2000 2400 2800 3200 3600 0 4000 5 10 15 20 25 30 35 40 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGF30N400 Not For New Designs Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature 500 Fig. 13. Resistive Turn-on Rise Time vs. Drain Current 500 RG = 2Ω , VGE = 15V 450 450 VCE = 1250V 400 t r - Nanoseconds t r - Nanoseconds 400 350 I D = 60A 300 250 I D = 30A TJ = 125ºC 350 300 RG = 2Ω , VGE = 15V VCE = 1250V 250 200 200 150 150 TJ = 25ºC 100 100 25 35 45 55 65 75 85 95 105 115 15 125 20 25 30 Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 10,000 1,000 tr 35 600 td(on) tf 550 50 td(off) 100 10 t f - Nanoseconds 500 VCE = 1250V 450 230 220 I C = 30A 400 210 350 200 300 10 1000 100 190 I C = 60A 180 200 25 35 45 RG - Ohms td(off) 85 95 105 115 170 125 250 tf 240 TJ = 125ºC, VGE = 15V 230 700 220 600 210 500 200 400 190 300 10,000 td(off) VCE = 1250V 1,000 1,000 I C = 30A t d ( o f f ) - Nanoseconds VCE = 1250V 800 75 10,000 t d ( o f f ) - Nanoseconds t f - Nanoseconds 260 RG = 2Ω, VGE = 15V 900 65 Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds tf 55 TJ - Degrees Centigrade Fig. 16. Resistive Turn-off Switching Times vs. Drain Current 1000 250 240 250 1100 60 t d ( o f f ) - Nanoseconds 100 t d ( o n ) - Nanoseconds I C = 60A, 30A 1 55 RG = 2Ω, VGE = 15V VCE = 1250V t r - Nanoseconds 45 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature TJ = 125ºC, VGE = 15V 1,000 40 I C - Amperes TJ - Degrees Centigrade 180 TJ = 125ºC, 25ºC 200 100 160 15 20 25 30 35 40 I C = 60A 170 45 I C - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 50 55 60 100 1 10 100 100 1000 RG - Ohms IXYS REF: G_30N400(8P)11-23-09-C IXGF30N400 ISOPLUS I4-PakTM (HV) Outline E A Q D A2 U S T R 4 L1 1 2 3 L c e A1 B1 b e1 1 - Gate 2 - Emitter 3 - Collector 4 - Electrically Isolated 2,500V IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Not For New Designs IXGF30N400 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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