IXGF32N170

High Voltage IGBT IXGF32N170 VCES IC110 VCE(sat) tfi(typ) ( Electrically Isolated Tab) = = ≤ = 1700V 19A 3.5V 250ns ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 44 A IC110 TC = 110°C 19 A ICM TC = 25°C, 1ms 200 A SSOA VGE = 15V, TVJ = 125°C, RG = 2.7Ω ICM = 70 A (RBSOA) Clamped Inductive Load tsc TC = 125°C, VCE = 1200V, VGE = 15V, RG = 10Ω PC TC = 25°C μs 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 20..120 / 4.5..27 Nm/lb.in. 2500 V~ 5 g TL TSOLD 1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 minute Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8 • VCES, VGE= 0V, Note 2 TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 32A, VGE = 15V, Note 1 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2 5 ISOLATED TAB 1 = Gate 2 = Emitter 5 = Collector @ 0.8 • VCES 10 TJ 1 Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 50 μA 1 mA 2.7 3.3 ±100 nA 3.5 V V Features Electrically Isolated Tab High Current Handling Capability Rugged NPT Structure Molding Epoxies Meet UL 94 V-0 Flammability Classification Applications Capacitor Discharge & Pulser Circuits AC Motor Drives Uninterruptible Power Supplies (UPS) Switched-Mode and Resonant-Mode Power Supplies Advantages High Power Density Suitable for Surface Mounting DS99569B(5/09) IXGF32N170 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 32A, VCE = 10V, Note 1 20 ISOPLUS i4-PakTM (HV) (IXGF) Outline 30 S 4290 pF 167 pF 47 pF 146 nC 28 nC Qgc 52 nC td(on) 45 ns 38 ns Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = 32A, VGE = 15V, VCE = 0.5 • VCES tri Inductive load, TJ = 25°C td(off) IC = 32A, VGE = 15V 270 500 ns tfi Eoff VCE = 0.6 • VCES, RG = 2.7Ω 250 10.6 500 20 ns mJ td(on) tri Eoff td(off) tfi Eoff 48 ns 42 ns 6.0 mJ 360 ns 560 13.5 ns mJ 0.15 30 0.62 °C/W °C/W °C/W Inductive load, TJ = 125°C IC = 32A, VGE = 15V VCE = 0.6 • VCES, RG = 2.7Ω RthJC RthCS RthJA Notes: 1. Pulse test, t < 300μs; duty cycle, d < 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGF32N170 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 240 64 VGE = 17V 15V 13V 11V 56 180 9V 40 I C - Amperes I C - Amperes 48 15V VGE = 17V 210 32 24 16 13V 150 11V 120 90 9V 60 7V 8 7V 30 0 0 0.5 1.0 1.5 2.0 2.5 VC E 3.0 3.5 4.0 4.5 5.0 0 6 8 E 10 12 14 - Volts Fig. 4. Dependence of VCE(sat) on Temperature 1.8 64 VGE = 17V 15V 13V 11V 48 VGE = 15V 1.6 V C E (sat)- Normalized 56 9V 40 32 24 7V 16 IC = 64A 1.4 1.2 IC = 32A 1.0 0.8 8 0 IC = 16A 0.6 0 1 2 3 4 5 6 -50 -25 VCE - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage Fig. 6. Input Admittance 100 8 90 TJ = 25ºC 7 80 I C - Amperes 6 VC E - Volts 4 VC Fig. 3. Output Characteristics @ 125ºC I C - Amperes 2 - Volts IC = 64A 5 4 32A 70 60 50 TJ = 125ºC 25ºC - 40ºC 40 30 3 20 2 16A 10 1 0 6 7 8 9 10 11 12 13 VG E - Volts © 2009 IXYS CORPORATION, All Rights Reserved 14 15 16 17 4 5 6 7 8 9 10 VG E - Volts IXYS REF: G_32N170 (7N)7-10-08-A IXGF32N170 Fig. 7. Transconductance Fig. 8. Gate Charge 16 45 40 35 12 25ºC 30 125ºC VG E - Volts g f s - Siemens VCE = 850V IC = 32A IG = 10mA 14 TJ = - 40ºC 25 20 15 10 8 6 4 10 2 5 0 0 0 10 20 30 40 I C 50 60 70 80 90 0 100 20 40 60 Q - Amperes Fig. 9. Capacitance 80 100 120 140 160 - nanoCoulombs G Fig. 10. Dependence of Eoff on RG 25 10000 23 21 E off - milliJoules Capacitance - p F Cies 1000 Coes 100 IC = 64A 19 TJ = 125ºC 17 VGE = 1 5V 13 11 Cres f = 1 MHz IC = 16A 9 10 0 0 5 10 15 VC 20 E 25 30 35 5 10 15 40 20 R - Volts G 25 30 35 40 45 50 - Ohms Fig. 12. Dependence of Eoff on Fig. 11. Dependence of Eoff on I C Temperature 22 24 R G = 2.7Ω R G= 1 5Ω ---- VGE = 1 5V VGE = 1 0 2 0V 18 R G = 2.7Ω 22 16 14 12 R G= 1 5Ω 20 TJ = 125ºC E off - milliJoules 20 E off - MilliJoules IC = 32A VCE = 1 0 2 0V 15 TJ = 25ºC IC = 64A ---- VGE = 15V VGE = 10 2 0V 18 16 IC = 32A 14 12 10 10 IC = 16A 8 8 6 16 20 24 28 32 I 36 C 40 44 48 52 56 60 64 - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 IXGF32N170 Fig. 13. Maximum Transient Thermal Impedance Z (th) J C - (ºC/W) 1.00 0.10 0.01 0.00 0.00001 0.0001 © 2009 IXYS CORPORATION, All Rights Reserved 0.001 0.01 Pulse Width - Seconds 0.1 1 10 IXYS REF: G_32N170 (7N)7-10-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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