IXGH100N30C3

Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE(sat) tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C (chip capability) 100 A ICM TC = 25°C, 1ms 500 A IA TC = 25°C 100 A EAS TC = 25°C 500 mJ SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped inductive load @ ≤ 300V ICM = 200 A PC TC = 25°C G 460 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g Md Mounting torque Weight z z z z z z Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 250µA, VGE = 0V = 250µA, VCE = VGE IGES VCE = 0V, VGE = ± 20V VCE(sat) IC 300 2.5 TJ = 125°C = 100A, VGE = 15V TJ = 125°C © 2007 IXYS CORPORATION, All rights reserved 1.53 1.59 5.0 V V 50 1.0 µA mA ±100 nA 1.85 V V (TAB) C = Collector TAB = Collector High Frequency IGBT Square RBSOA High avalanche capability Drive simplicity with MOS Gate Turn-On High current handling capability Applications z Symbol E Features z Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s C G = Gate E = Emitter z TL TSOLD 300V 100A 1.85V 94ns TO-247 (IXGH) Symbol TJ = = ≤ = z z z PFC Circuits PDP Systems Switched-mode and resonant-mode converters and inverters SMPS AC motor speed control DC servo and robot drives DC choppers DS99877A(01/08) IXGH100N30C3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Min. IC = 60A, VCE = 10V, Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%. Characteristic Values Typ. Max. 40 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 75 S 6300 pF 435 pF 115 pF 162 nC 27 nC Qgc 60 nC td(on) 23 ns 38 ns tri Eon td(off) tfi Inductive Load, TJ = 25°°C 0.23 IC = 50A, VGE = 15V 105 VCE = 200V, RG = 2Ω ns 94 Eoff 0.52 ns 0.9 mJ 24 td(on) tri mJ 160 ns 37 ns Eon Inductive Load, TJ = 125°°C 0.35 mJ td(off) IC = 50A, VGE = 15V 131 ns tfi VCE = 200V, RG = 2Ω 113 ns 0.75 mJ Eoff TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.27 °C/W RthJC RthCK 0.21 °C/W PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH100N30C3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 350 VGE = 15V 13V 11V 180 160 250 140 9V IC - Amperes IC - Amperes VGE = 15V 13V 11V 300 120 100 80 7V 60 9V 200 150 100 7V 40 50 20 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 1 2 4 5 6 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 200 1.6 VGE = 15V 13V 11V 180 160 VGE = 15V 1.5 I C = 200A I C = 100A I C = 50A VCE(sat) - Normalized 1.4 140 IC - Amperes 3 VCE - Volts VCE - Volts 9V 120 100 7V 80 60 1.3 1.2 1.1 1.0 0.9 40 20 0.8 5V 0 0.7 0 0.4 0.8 1.2 1.6 2 2.4 -50 -25 0 VCE - Volts 25 50 75 100 125 150 7.5 8 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 4.5 TJ = 25ºC 180 4.0 160 3.5 140 3.0 C = 200A 100A 50A IC - Amperes VCE - Volts I 2.5 TJ = 125ºC 25ºC - 40ºC 120 100 80 60 2.0 40 1.5 20 1.0 0 6 7 8 9 10 11 12 VGE - Volts © 2007 IXYS CORPORATION, All rights reserved 13 14 15 4 4.5 5 5.5 6 VGE - Volts 6.5 7 IXGH100N30C3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 120 VCE = 150V 110 14 I C = 100A 100 TJ = - 40ºC 25ºC 125ºC 80 12 VGE - Volts g f s - Siemens 90 I G = 10mA 70 60 50 10 8 6 40 4 30 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 200 20 40 Fig. 9. Capacitance 80 100 120 140 160 Fig. 10. Reverse-Bias Safe Operating Area 240 10,000 Cies 200 1,000 IC - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs IC - Amperes Coes 160 120 80 100 Cres TJ = 125ºC 40 RG = 2Ω dV / dT < 10V / ns f = 1 MHz 0 10 0 5 10 15 20 25 30 35 40 50 100 VCE - Volts 150 200 250 300 350 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGH100N30C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Swiching Energy Loss vs. Collector Current 1.1 Eoff Eon TJ = 125ºC , 1.0 ---- VGE = 15V 0.5 I C = 25A 0.4 0.2 5 6 7 8 Eoff - MilliJoules 0.8 0.4 0.6 0.3 0.4 0.2 0.2 0.1 9 0.0 25 10 30 35 40 RG - Ohms 0.5 Eon 60 65 70 75 360 td(off) - tf t f - Nanoseconds 0.3 140 280 I 240 120 200 I I C = 25A = 50A 130 0.1 0.2 C 110 C t d(off) - Nanoseconds 0.2 0.4 - MilliJoules 0.5 on E 0.3 I C = 50A 320 VCE = 200V 0.7 0.6 --- TJ = 125ºC, VGE = 15V 150 0.4 VCE = 200V Eoff - MilliJoules 55 160 ---- RG = 2Ω , VGE = 15V 0.8 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 1.0 Eoff 45 IC - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature 0.9 0.5 TJ = 125ºC, 25ºC 0.0 0.1 4 1.0 0.2 0.3 3 0.6 VCE = 200V - MilliJoules 0.3 0.6 0.7 on = 50A ---- VGE = 15V E C - MilliJoules 0.7 on 0.4 I Eon RG = 2Ω , 1.2 0.8 2 Eoff 0.5 VCE = 200V 0.9 0.8 1.4 E Eoff - MilliJoules 1.6 0.6 1.2 = 25A 160 0.1 0.0 25 35 45 55 65 75 85 95 105 115 0.0 125 100 120 2 3 4 5 TJ - Degrees Centigrade 135 130 VCE = 200V 120 100 115 80 110 135 td(off) - tf 120 t f - Nanoseconds 125 RG = 2Ω , VGE = 15V 120 10 --130 RG = 2Ω , VGE = 15V VCE = 200V 110 125 100 120 I C = 50A, 25A 90 115 80 110 105 70 105 100 60 TJ = 25ºC 60 40 25 30 35 40 45 50 55 60 IC - Amperes © 2007 IXYS CORPORATION, All rights reserved 65 70 75 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 100 125 t d(off) - Nanoseconds TJ = 125ºC ---- 9 130 t d(off) - Nanoseconds t f - Nanoseconds 160 td(off) 8 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 180 tf 7 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 140 6 IXGH100N30C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 60 70 34 td(on) - - - - tr 55 32 28 = 50A 40 26 35 24 30 22 I C = 25A 25 20 20 18 t r - Nanoseconds t r - Nanoseconds C 55 t d(on) - Nanoseconds I td(on) ---28 RG = 2Ω , VGE = 15V VCE = 200V 50 26 45 TJ = 25ºC, 125ºC 40 24 35 30 22 25 20 15 3 4 5 6 7 8 9 20 15 16 2 t d(on) - Nanoseconds 30 VCE = 200V 45 tr 60 TJ = 125ºC, VGE = 15V 50 30 65 10 10 18 25 RG - Ohms 30 35 40 45 50 55 60 65 70 75 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 50 26 45 --25 RG = 2Ω , VGE = 15V VCE = 200V 35 24 23 I C = 50A 30 22 25 21 I C = 25A 20 20 15 19 10 25 35 45 55 65 75 85 95 105 115 t d(on) - Nanoseconds 40 t r - Nanoseconds td(on) - tr 18 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_100N30C3(75)8-17-07 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.