IXGH120N30B3

GenX3TM 300V IGBT VCES = 300V IC110 = 120A VCE(sat) ≤ 1.7V IXGH120N30B3* *Obsolete Part Number Medium speed low Vsat PT IGBTs for 10-50 kHz switching Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 300 300 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1ms 75 120 480 A A A SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 1Ω Clamped inductive load @VCE≤ 300V PC TC = 25°C Mounting torque TL TSOLD Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s O Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) ICES IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC 540 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13 / 10 Nm/lb.in. 300 260 °C °C 6 g © 2008 IXYS CORPORATION, All rights reserved G C 1.42 1.47 C = Collector TAB = Collector Features z z z Optimized for low switching losses Square RBSOA International standard package Advantages z z High power density Low gate drive requirement Applications z Characteristic Values Min. Typ. Max. 300 3.0 TAB E G = Gate E = Emitter z TJ = 125°C = 120A, VGE = 15V, Note 1 TJ = 125°C TO-247 (IXGH) et A bs Md BVCES VGE(th) ICM = 240 ol TJ TJM Tstg Maximum Ratings e Symbol z z 5.0 V V 10 500 μA μA ±100 nA 1.70 V V z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99797A(07/08) IXGH120N30B3 gfs Cies Coes Cres Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 55 VCE = 25V, VGE = 0V, f = 1MHz 90 S 6700 650 160 pF pF pF 225 nC 38 nC 85 nC 22 27 ns ns 100 64 ns ns 21 30 ns ns Qg Qge IC = 120A, VGE = 15V, VCE = 0.5 • VCES Qgc td(off) tf td(on) tr td(off) tf Resistive load, TJ = 25°°C IC = 60A, VGE = 15V VCE = 240V, RG = 1Ω Resistive load, TJ = 125°°C IC = 60A, VGE = 15V 106 250 VCE = 240V, RG = 1Ω 1 RthJC RthCK ∅P 3 Terminals: 1 - Gate 3 - Source Dim. ns ns 0.23 °C/W °C/W ol 0.21 2 e Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC et td(on) tr TO-247 (IXGH) Outline e Symbol Test Conditions (TJ = 25°C, unless otherwise specified) 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC O bs Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH120N30B3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 240 330 VGE = 15V 13V 11V 220 200 270 240 160 IC - Amperes IC - Amperes 180 9V 140 120 100 7V 80 9V 210 180 150 120 60 90 40 60 20 30 0 7V 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 1 2 Fig. 3. Output Characteristics @ 125ºC 6 7 8 125 150 et 1.6 VGE = 15V 13V 11V VGE = 15V VCE(sat) - Normalized 1.5 1.4 I ol 200 160 9V 120 7V bs 80 40 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 = 240A 1.2 1.1 I C = 120A I C = 60A 1.0 0.8 0.7 2.4 -50 -25 0 VCE - Volts O C 1.3 0.9 5V 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 275 250 TJ = 25ºC 225 4.0 200 IC - Amperes VCE - Volts 5 Fig. 4. Dependence of VCE(sat) on Junction Temperature 240 4.5 4 VCE - Volts VCE - Volts 5.0 3 e 0.0 IC - Amperes VGE = 15V 13V 11V 300 3.5 I 3.0 C = 240A 120A 60A 2.5 175 150 TJ = 125ºC 25ºC - 40ºC 125 100 75 2.0 50 1.5 25 1.0 0 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 3.5 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 8.5 IXGH120N30B3 Fig. 7. Transconductance Fig. 8. Gate Charge 140 16 TJ = - 40ºC VGE - Volts 125ºC 80 I C = 120A I G = 10mA 12 25ºC 100 g f s - Siemens VCE = 150V 14 120 60 40 10 8 6 4 20 2 0 0 40 80 120 160 200 240 0 280 20 40 60 100 120 140 160 180 200 220 240 QG - NanoCoulombs et IC - Amperes Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 100,000 270 f = 1 MHz 240 Cies 10,000 ol Capacitance - PicoFarads 210 IC - Amperes 80 e 0 180 150 120 TJ = 125ºC 60 bs 90 Coes 1,000 100 Cres RG = 1Ω dV / dt < 10V / ns 30 0 50 75 100 125 150 175 200 225 250 275 300 325 10 0 5 10 15 20 25 30 35 40 VCE - Volts VCE - Volts Z(th)JC - ºC / W O Fig. 11. Maximum Transient Thermal Impedance 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_120N30B3(76)08-07-08-B IXGH120N30B3 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature 39 39 RG = 1Ω VGE = 15V VCE = 240V 35 RG = 1Ω 37 I C t r - Nanoseconds t r - Nanoseconds 37 = 120A 33 31 VGE = 15V VCE = 240V 35 TJ = 125ºC 33 31 29 29 I C TJ = 25ºC = 60A 27 27 25 25 35 45 55 65 75 85 95 105 115 60 125 40 325 TJ = 125ºC, VGE = 15V 170 300 VCE = 240V 160 26 bs 21 31 20 30 29 28 1.0 1.5 2.0 2.5 3.0 3.5 tr 4.0 4.5 275 150 250 140 I C = 60A 225 130 200 120 175 19 150 18 125 17 100 5.0 110 I O RG = 1Ω, VGE = 15V 225 105 t f - Nanoseconds 175 100 I C = 60A 150 I C = 120A 125 95 100 75 90 50 80 1.0 1.5 2.0 2.5 3.0 3.5 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade © 2008 IXYS CORPORATION, All rights reserved 105 115 85 125 4.0 4.5 5.0 RG - Ohms Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 108 250 tf 225 RG = 1Ω, VGE = 15V 104 200 VCE = 240V 102 175 td(off) - - - - 106 100 150 98 TJ = 125ºC 125 96 100 94 75 92 50 90 TJ = 25ºC 25 25 100 t d(off) - Nanoseconds 200 t d(off) - Nanoseconds VCE = 240V = 120A 275 110 td(off) - - - - t f - Nanoseconds 250 C 90 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature tf 180 td(on) - - - - RG - Ohms 275 190 - Nanoseconds 22 32 120 27 23 33 115 350 24 34 110 375 - Nanoseconds I C = 120A 105 28 25 35 100 29 t f - Nanoseconds 36 95 ol I C = 60A 90 d(off) VCE = 240V 85 t 37 t r - Nanoseconds td(on) - - - - d(on) TJ = 125ºC, VGE = 15V 80 Fig. 15. Resistive Turn-off Switching Times vs. Gate Resistance t 38 75 et Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance tr 70 IC - Amperes TJ - Degrees Centigrade 39 65 e 25 88 0 60 65 70 75 80 85 90 95 86 100 105 110 115 120 IC - Amperes IXYS REF: G_120N30B3(76)08-07-08-B e et ol bs O Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.