IXGH120N30C3

Preliminary Technical Information IXGH120N30C3* GenX3TM 300V IGBT VCES IC110 VCE(sat) tfi(typ) *Obsolete Part Number High speed PT IGBTs for 50-150kHz switching Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 IC110 TC = 110°C (chip capability) 120 ICM TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped inductive load @ ≤ 300V PC TC = 25°C Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Md Mounting torque Symbol O TL TSOLD Weight Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC 120 A mJ ICM = 240 A 540 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g (TAB) C = Collector, TAB = Collector Features z z z z z z z z z Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. TJ = 125°C = 120A, VGE = 15V TJ = 125°C 1.75 1.70 5.0 V V 50 1.0 μA mA ±100 nA 2.10 V V High Frequency IGBT Square RBSOA High avalanche capability Drive simplicity with MOS Gate Turn-On High current handling capability Applications z 300 2.5 © 2008 IXYS CORPORATION, All rights reserved G = Gate, E = Emitter, z = 250μA, VGE = 0V = 250μA, VCE = VGE IGES E A 850 bs Tstg C et SSOA (RBSOA) TJM A ol TC = 25°C TJ A 600 TC = 25°C G e Test Conditions IA 300V 120A 2.1V 86ns TO-247 AD (IXGH) Symbol EAS = = ≤ = z PFC Circuits PDP Systems Switched-mode and resonant-mode converters and inverters SMPS AC motor speed control DC servo and robot drives DC choppers DS99850B(01/08) IXGH120N30C3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. 83 S 8700 pF 715 pF Cres 195 pF Qg 230 nC 32 nC gfs IC = 60A, VCE = 10V, Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Characteristic Values Typ. Max. 50 Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = IC110, VGE = 15V, VCE = 0.5 • VCES 87 nC td(on) 28 ns 37 ns Eon td(off) tfi Inductive Load, TJ = 25°°C 0.23 IC = 60A, VGE = 15V 109 VCE = 200V, RG = 2Ω 86 Eoff 0.73 td(off) tfi Inductive Load, TJ = 125°°C IC = 60A, VGE = 15V VCE = 200V, RG = 2Ω RthJC Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 1.3 mJ ns 38 ns mJ 120 ns 113 ns 0.88 mJ 0.21 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.23 °C/W °C/W O RthCK ns 0.37 bs Eoff ns ol Eon mJ 160 28 td(on) tri e Dim. et tri ∅P e Qgc TO-247 AD Outline PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH120N30C3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 240 VGE = 15V 11V VGE = 15V 13V 11V 220 200 250 9V 9V 160 IC - Amperes IC - Amperes 180 140 120 7V 100 80 200 7V 150 100 60 40 50 5V 20 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 2 3 7 8 9 10 et V GE = 15V 13V 11V 200 V GE = 15V I C = 240A 1.3 9V 1.2 ol 180 VCE(sat) - Normalized 220 160 7V 140 120 100 bs 80 60 40 0 0 0.4 0.8 1.2 1.6 2 2.4 1.1 I C = 120A 1.0 0.9 I C = 60A 0.8 5V 20 0.7 2.8 -50 -25 0 O VCE - Volts 25 50 75 100 125 150 6.5 7 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 160 TJ = 25ºC 140 120 IC - Amperes 4.0 VCE - Volts 6 1.4 240 4.5 5 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 5.0 4 VCE - Volts VCE - Volts IC - Amperes 1 e 0 I C = 240A 120A 60A 3.5 3.0 2.5 TJ = 125ºC 25ºC - 40ºC 100 80 60 40 2.0 20 1.5 0 5 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 3 3.5 4 4.5 5 VGE - Volts 5.5 6 IXGH120N30C3 Fig. 7. Transconductance Fig. 8. Gate Charge 140 16 120 14 VCE = 150V 12 I G = 10 mA I C = 120A TJ = - 40ºC 25ºC 125ºC 80 VGE - Volts g f s - Siemens 100 60 40 10 8 6 4 20 2 0 0 20 40 60 80 100 120 140 0 160 40 80 120 e 0 160 200 240 QG - NanoCoulombs et I C - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 280 C ies 1,000 IC - Amperes ol 200 C oes bs Capacitance - PicoFarads 240 C res f = 1 MHz 100 0 5 10 15 20 25 30 35 40 160 120 80 TJ = 125ºC RG = 2Ω dV / dT < 10V / ns 40 0 50 100 150 200 250 300 350 VCE - Volts O VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGH120N30C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Swiching Energy Loss vs. Collector Current 1.6 2.4 VCE = 200V 0.5 2.0 0.6 Eon RG = 2Ω , VGE = 15V 0.6 VCE = 200V 0.5 1.6 0.4 1.2 0.2 0.8 0.1 0.4 0.3 TJ = 125ºC - MilliJoules 0.3 ---- Eoff on 0.8 - MilliJoules 0.4 on E I C = 60A 1.0 0.7 E 0.6 ---- TJ = 125ºC , VGE = 15V 1.2 Eoff - MilliJoules Eon 2.8 Eoff - MilliJoules Eoff 1.4 0.7 0.2 I C = 30A 0.4 0.1 TJ = 25ºC 0.0 2 3 4 5 6 7 8 9 0.0 10 30 RG - Ohms 80 90 440 td(off) - - - TJ = 125ºC, VGE = 15V VCE = 200V tf 140 0.5 130 400 0.4 on 0.6 0.3 0.2 bs 0.4 - MilliJoules I C = 60A t f - Nanoseconds ol 360 0.2 120 110 320 280 I C = 60A 100 240 90 200 I C = 30A 80 t d(off) - Nanoseconds 0.8 E Eoff - MilliJoules 70 et ---- RG = 2Ω , VGE = 15V VCE = 200V 160 0.1 I C = 30A 0 25 35 45 55 65 75 85 95 105 115 0.0 125 70 120 60 80 2 3 4 5 O 135 80 115 TJ = 25ºC VCE = 200V 105 50 60 130 90 125 I C = 60A, 30A 80 120 70 115 60 110 50 105 110 40 40 t f - Nanoseconds 120 t d(off) - Nanoseconds TJ = 125ºC 135 RG = 2Ω , VGE = 15V 100 125 30 10 70 I C - Amperes © 2008 IXYS CORPORATION, All rights reserved 80 90 40 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 100 125 t d(off) - Nanoseconds VCE = 200V td(off) - - - - tf 130 120 60 9 140 110 RG = 2Ω , VGE = 15V 100 8 120 td(off) - - - - tf 140 7 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 6 RG - Ohms TJ - Degrees Centigrade t f - Nanoseconds 60 150 0.6 Eon 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 1.2 Eoff 40 I C - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature 1 0.0 e 0.2 IXGH120N30C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 60 40 td(on) - - - - 55 70 38 40 32 I C = 60A 35 30 I C = 30A 30 28 25 26 20 24 15 VCE = 200V t r - Nanoseconds 34 22 2 3 4 5 6 7 8 9 TJ = 25ºC, 125ºC 30 27 20 25 40 50 60 70 23 80 90 et 28 ol 40 I C = 60A 27 td(on) - - - - RG = 2Ω , VGE = 15V 26 VCE = 200V bs 25 I C = 30A 20 29 t d(on) - Nanoseconds t r - Nanoseconds 29 25 40 30 45 30 31 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tr 50 10 10 RG - Ohms 35 33 RG = 2Ω , VGE = 15V t d(on) - Nanoseconds 45 t d(on) - Nanoseconds t r - Nanoseconds 60 36 VCE = 200V td(on) - - - - tr TJ = 125ºC, VGE = 15V 50 35 e tr 24 15 25 35 45 55 65 75 85 95 105 115 23 125 O TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_120N30C3(76)7-13-07 e et ol bs O Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.