IXGH12N100

Low VCE(sat) IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH ICM = 24 @ 0.8 VCES A PC TC = 25°C 100 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 1.13/10 Nm/lb.in. 6 g 300 °C TJ Md Mounting torque (M3) Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions BVCES IC Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 3 mA, VGE = 0 V 1000 BVCES temperature coefficient VGE(th) 0.072 IC = 500 mA, VGE = VGE 2.5 VGE(th) temperature coefficient ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V V 5.5 -0.192 TJ = 25°C TJ = 125°C 12N100 12N100A IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved %/K V %/K 250 1 mA mA ±100 nA 3.5 4.0 V V IC25 VCE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247AD G C (TAB) C G = Gate E = Emitter E C = Collector TAB = Collector Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Voltage rating guaranteed at high temperature (125°C) Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • High power density 95590B(7/00) 1-2 IXGH12N100 IXGH12N100A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % Cies 10 S 750 pF 80 pF Cres 30 pF Qg 65 90 nC 8 20 nC 24 45 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 6 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°C 100 ns t ri IC = IC90, VGE = 15 V, L = 300 mH, VCE =. 0.8 VCES, RG = Roff = 120 W 200 ns td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 850 1000 ns 12N100 800 1000 ns 12N100A 500 700 ns 12N100 2.5 12N100A 1.5 mJ 3.0 mJ TO-247 AD (IXGH) Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 td(on) 100 ns t ri 200 ns J K 1.1 mJ L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 900 ns N 1.5 2.49 0.087 0.102 1250 ns Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 mH VCE = 0.8 VCES, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG RthJC RthCK 12N100 12N100A 950 ns 12N100 3.5 mJ 12N100A 2.2 mJ 0.25 1.25 K/W K/W IXGH12N100/A characteristic curves may be found in the IXGH12N100U/AU1 data sheet. © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.