IXGH12N120A3

IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 GenX3TM 1200V IGBTs High Surge Current VCES = 1200V = 12A IC90 VCE(sat) ≤ 3.0V Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 AA (IXGA) G S D (Tab) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM Continuous Transient IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1ms SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load PC TC = 25°C TO-220AB (IXGP) Maximum Ratings 1200 1200 V V ±20 ±30 V V 22 12 60 A A A ICM = 24 VCE ≤ 0.8 • VCES A 100 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb. Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G G BVCES IC = 250μA, VGE = 0V 1200 VGE(th) IC = 250μA, VCE = VGE 2.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC90, VGE = 15V, Note 1 TJ = 125°C 2.40 2.75 D (Tab) D = Drain Tab = Drain Features z z Optimized for Low Conduction Losses International Standard Packages Advantages 5.0 V 10 275 μA μA ±100 nA 3.0 V V z z z z z z z z z © 2010 IXYS CORPORATION, All Rights Reserved S High Power Density Low Gate Drive Requirement Applications V TJ = 125°C D G = Gate S = Source z Characteristic Values Min. Typ. Max. D (Tab) TO-247 (IXGH) z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified DS Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100212B(11/10) IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC = IC90, VCE = 10V, Note 1 IC(on) VGE = 10V, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 5.2 Cies Coes S 44 A 550 pF VCE = 25V, VGE = 0V, f = 1MHz 30 pF 8 pF 20.4 nC 3.1 nC 8.5 nC 35 140 62 1035 ns ns ns ns 35 ns VCE = 960V, RG = 10Ω 167 70 1475 ns ns ns TO-247 TO-220 0.21 0.50 Cres Qg Qge IC = IC90, VGE = 15V, VCE = 600V Qgc td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C td(on) Resistive Switching Times, TJ = 125°C tr td(off) tf IC = IC90, VGE = 15V VCE = 960V, RG = 10Ω IC = IC90, VGE = 15V RthJC RthCS Note TO-263 Outline 8.8 1 = Gate 2 = Collector 3 = Emitter 4 = Collector 1.25 °C/W °C/W °C/W TO-220 Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-247 Outline 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitted 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1 = Gate 2 = Collector Pins: 1 - Gate 3 = Emitter 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 24 70 VGE = 15V 13V 11V 10V 9V 20 VGE = 15V 60 8V 13V 50 IC - Amperes IC - Amperes 16 7V 12 8 6V 11V 40 10V 9V 30 8V 20 7V 4 10 5V 0 6V 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 VCE - Volts 25 30 VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 24 1.8 VGE = 15V 13V 11V 10V 9V VGE = 15V I = 24A C 1.6 8V VCE(sat) - Normalized 20 IC - Amperes 20 16 7V 12 8 6V 4 1.4 1.2 I C = 12A 1.0 0.8 I C = 6A 5V 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -50 -25 0 VCE - Volts 25 50 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 100 125 150 Fig. 6. Input Admittance 35 6.5 TJ = 25ºC 6.0 30 TJ = - 40ºC 25ºC 125ºC 5.5 25 4.5 I C IC - Amperes 5.0 VCE - Volts 75 TJ - Degrees Centigrade = 24A 4.0 3.5 12A 3.0 20 15 10 6A 2.5 5 2.0 1.5 0 5 6 7 8 9 10 11 12 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 13 14 15 3 4 5 6 VGE - Volts 7 8 9 IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 Fig. 7. Transconductance Fig. 8. Gate Charge 12 16 TJ = - 40ºC 10 8 125ºC VGE - Volts g f s - Siemens 25ºC 6 4 14 VCE = 600V 12 I G = 10mA I C = 12A 10 8 6 4 2 2 0 0 0 5 10 15 20 25 30 35 40 0 2 4 6 IC - Amperes 8 10 12 14 16 Fig. 9. Reverse-Bias Safe Operating Area 22 Fig. 10. Capacitance 24 Capacitance - PicoFarads Cies 20 IC - Amperes 20 1,000 28 16 12 8 TJ = 125ºC 4 18 QG - NanoCoulombs 100 Coes 10 Cres RG = 10Ω dv / dt < 10V / ns 0 200 f = 1 MHz 1 300 400 500 600 700 VCE - Volts 800 900 1000 1100 1200 0 5 10 Fig. 11. Maximum Transient Thermal Impedance 15 20 25 30 35 40 VCE - Volts 10.00 Fig. 11. Maximum Transient Thermal Impedance aaaaaa 3.00 Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 13. Resistive Turn-on Rise Time vs. Collector Current 240 240 RG = 10Ω , VGE = 15V RG = 10Ω , VGE = 15V 220 VCE = 960V 200 I C t r - Nanoseconds t r - Nanoseconds 220 = 24A 180 160 I 140 C = 12A VCE = 960V 200 TJ = 125ºC 180 160 TJ = 25ºC 140 120 120 100 100 25 35 45 55 65 75 85 95 105 115 6 125 8 10 12 14 260 td(on) - - - 120 TJ = 125ºC, VGE = 15V 100 I C = 24A 80 I C = 12A 180 60 160 40 t f - Nanoseconds 220 t d(on) - Nanoseconds t r - Nanoseconds 22 24 100 1500 tf td(off) - - - - 1400 VCE = 960V 90 RG = 10Ω, VGE = 15V 80 1300 70 I C = 12A 1200 60 1100 50 I C = 24A 1000 40 900 140 0 30 60 90 120 150 180 210 240 270 20 300 30 800 25 35 45 55 RG - Ohms RG = 10Ω, VGE = 15V 1800 100 1700 80 1400 70 TJ = 25ºC 1200 60 30 1100 14 16 18 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 20 22 24 td(off) - - - - 20 125 600 TJ = 125ºC, VGE = 15V I C 500 = 12A 400 300 I C = 24A 1300 1200 600 tf 1400 40 12 115 1500 800 10 105 700 1600 50 8 95 VCE = 960V 1000 6 85 200 t d(off) - Nanoseconds 90 VCE = 960V TJ = 125ºC t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - 110 t f - Nanoseconds tf 1600 75 Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance 2200 1800 65 TJ - Degrees Centigrade Fig. 16. Resistive Turn-off Switching Times vs. Collector Current 2000 t d(off) - Nanoseconds VCE = 960V 200 20 1600 140 tr 18 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 240 16 IC - Amperes TJ - Degrees Centigrade 100 0 30 60 90 120 150 180 210 240 270 0 300 RG - Ohms IXYS REF: G_12N120A3(2M)02-11-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.