IXGH16N60B2D1

HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE(sat) ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 1.95V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 40 16 11 100 A A A A SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 22Ω Clamped Inductive load ICM = 32 VCE ≤ VCES A PC TC = 25°C 150 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 10..65 / 2.2..14.6 Nm/lb.in. N/lb. = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg Md FC Mounting Torque (TO-220 & TO-247) Mounting Force (TO-263) TL TSOLD Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Weight TO-263 TO-220 TO-247 TO-220AB (IXGP) 300 260 °C °C 2.5 3.0 6.0 g g g G CE C (Tab) TO-247 (IXGH) G C D C (Tab) E S G = Gate E = Emitter C = Collector Tab = Collector Features z z z z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Packages Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC 3.0 ICES VCE = VCES,VGE = 0V = 250μA, VCE = VGE 5.5 Applications V 25 μA 1 mA TJ = 125°C IGES VCE = 0V, VGE = ±20V ±100 nA VCE(sat) IC 1.95 = 12A, VGE = 15V, Note1 TJ = 125°C 1.65 V V z z z z z z z z © 2013 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99178C(03/13) IXGA16N60B2D1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 12A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 8 S Qg(on) Qge Inductive load, TJ = 25°C IC = 12A, VGE = 15V VCE = 400V, RG = 22Ω Note 2 Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 675 70 20 pF pF pF 24 nC IC = 12A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi IXGP16N60B2D1 IXGH16N60B2D1 Inductive load, TJ = 125°C IC = 12A, VGE = 15V VCE = 400V, RG = 22Ω Note 2 TO-220 TO-247 5 nC 13 nC 18 20 0.16 73 70 ns ns mJ ns ns 0.12 0.22 mJ 17 20 0.26 140 125 0.38 ns ns mJ ns ns mJ 0.50 0.21 0.83 °C/W °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IRM trr trr IF = 10A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. TJ = 125°C 1.7 3.0 V V IF = 12A, VGE = 0V, -diF/dt = 100A/μs, VR = 100V, TJ = 125°C 2.5 A 110 ns 30 ns IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V RthJC Notes: 2.5 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA16N60B2D1 TO-220 (IXGP) Outline TO-263 (IXGA) Outline 1. 2. 3. 4. IXGP16N60B2D1 IXGH16N60B2D1 TO-247 (IXGH) AD Outline Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 © 2013 IXYS CORPORATION, All Rights Reserved Pins: 1 - Gate 3 - Emitter 2 - Collector 1 = Gate 2 = Collector 3 = Emitter IXGA16N60B2D1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 24 100 VGE = 15V 13V 12V 90 VGE = 15V 11V 80 14V 70 16 IC - Amperes IC - Amperes 20 10V 12 9V 8 60 13V 50 12V 40 11V 30 4 8V 7V 0 0 0.5 1 1.5 2 2.5 20 10V 10 9V 8V 0 3 0 5 10 15 25 30 125 150 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 24 1.4 VGE = 15V 13V 12V 16 10V 12 9V 8 0.5 1 1.5 6V 2.5 2 I C = 24A I C = 12A 1.1 1.0 0.9 0.7 7V 0 1.2 0.8 8V 4 0 VGE = 15V 1.3 11V VCE(sat) - Normalized 20 IC - Amperes 20 VCE - Volts VCE - Volts I C = 6A 0.6 0 3 25 50 VCE - Volts 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 35 5.0 TJ = 25ºC 4.5 30 4.0 25 3.5 3.0 I C IC - Amperes VCE - Volts IXGP16N60B2D1 IXGH16N60B2D1 = 24A 2.5 1.5 TJ = 125ºC 25ºC - 40ºC 15 10 12A 2.0 20 5 6A 1.0 0 8 9 10 11 12 13 14 15 VGE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4 5 6 7 8 VGE - Volts 9 10 11 12 IXGA16N60B2D1 Fig. 8. Gate Charge Fig. 7. Transconductance 18 16 TJ = - 40ºC 16 VGE - Volts 125ºC 10 I C = 12A I G = 10mA 12 25ºC 12 VCE = 300V 14 14 g f s - Siemens IXGP16N60B2D1 IXGH16N60B2D1 8 6 10 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 0 35 5 10 15 20 25 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 35 10,000 f = 1 MHz 25 Cies 1,000 IC - Amperes Capacitance - PicoFarads 30 Coes 100 20 15 10 TJ = 125ºC 5 Cres 10 0 5 10 15 20 25 30 35 0 100 40 RG = 22Ω dv / dt < 10V / ns 150 200 250 VCE - Volts 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2013 IXYS CORPORATION, All Rights Reserved 0.1 1 10 IXGA16N60B2D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eon - Eoff --- TJ = 125ºC , VGE = 15V 1.0 VCE = 400V 0.9 0.9 0.9 0.8 0.8 0.7 0.7 0.7 0.6 0.6 0.5 0.5 0.4 I C 30 40 50 60 70 80 90 0.7 0.6 0.6 TJ = 125ºC 0.5 0.3 0.3 0.3 0.2 0.2 0.1 0.1 100 0.0 0.1 0.0 12 13 14 15 16 190 0.9 180 0.8 0.6 I C = 24A 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.0 55 65 75 85 95 105 115 tfi 270 VCE = 400V 160 240 150 210 I 140 C 130 20 180 160 100 100 80 80 TJ = 25ºC 60 40 40 18 19 20 21 22 23 24 IC - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. t f i - Nanoseconds 180 120 17 150 30 40 50 60 70 80 90 60 100 180 tfi td(off) - - - - 160 RG = 22Ω , VGE = 15V VCE = 400V 140 120 140 120 I C = 24A, 12A 100 100 80 80 60 60 40 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 40 125 t d(off) - Nanoseconds t f i - Nanoseconds 200 t d(off) - Nanoseconds TJ = 125ºC 16 = 12A Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 160 15 C RG - Ohms td(off) - - - - 14 180 I 100 140 13 = 24A 0.0 125 140 12 300 td(off) - - - - 90 VCE = 400V 60 24 110 RG = 22Ω , VGE = 15V 120 23 0.1 200 160 22 120 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 21 TJ = 125ºC, VGE = 15V TJ - Degrees Centigrade 180 20 120 I C = 12A 45 19 330 170 t f i - Nanoseconds 0.6 35 18 t d(off) - Nanoseconds 0.7 Eon - MilliJoules Eoff - MilliJoules ---- 1.0 0.7 25 17 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance VCE = 400V 0.1 0.2 TJ = 25ºC IC - Amperes RG = 22Ω , VGE = 15V 0.8 0.5 0.4 1.0 Eon 0.8 VCE = 400V Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.9 RG = 22Ω , VGE = 15V RG - Ohms 0.9 1.0 ---- 0.4 0.3 20 Eon 0.4 = 12A 0.2 Eoff Eon - MilliJoules I C = 24A 0.8 1.0 Eon - MilliJoules Eoff - MilliJoules 1.0 1.1 1.1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Eoff - MilliJoules 1.2 IXGP16N60B2D1 IXGH16N60B2D1 IXGA16N60B2D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 90 80 td(on) - - - - Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 55 55 tri 50 45 45 tri 50 35 40 I C 30 I C = 12A 0 20 30 40 50 60 70 80 90 40 20 30 18 25 17 15 20 16 10 100 15 20 10 21 TJ = 25ºC, 125ºC 19 25 20 VCE = 400V 35 30 = 24A t r i - Nanoseconds 40 - Nanoseconds 60 d(on) t r i - Nanoseconds t VCE = 400V 22 RG = 22Ω , VGE = 15V TJ = 125ºC, VGE = 15V 70 23 td(on) - - - - t d(on) - Nanoseconds 50 IXGP16N60B2D1 IXGH16N60B2D1 15 12 13 14 15 16 17 18 19 20 21 22 23 24 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 60 24 tri 55 23 RG = 22Ω , VGE = 15V 50 22 VCE = 400V 45 21 I 40 C = 24A 20 35 19 30 18 25 17 I C = 12A 20 16 15 15 10 25 35 45 55 65 75 85 95 105 115 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - 14 125 TJ - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: IXG_16N60B2D1(3D)8-02-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.