IXGH17N100U1

Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 34 A IC90 TC = 90°C 17 A ICM TC = 25°C, 1 ms 68 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH ICM = 34 @ 0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 6 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features 1.13/10 Nm/lb.in. Weight TO-247 AD l l l l g °C 300 l l International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l l l l BVCES IC = 4.5 mA, VGE = 0 V 1000 VGE(th) IC = 500 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V TJ = 25°C TJ = 125°C 17N100U1 17N100AU1 V 5.5 V 500 8 µA mA ±100 nA 3.5 4.0 V V l Advantages l l l © 1996 IXYS All rights reserved AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Saves space (two devices in one package) Easy to mount (isolated mounting screw hole) Reduces assembly time and cost 91754D (3/96) IXGH 17N100U1 IXGH 17N100AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 6 15 S 1500 pF 210 pF Cres 40 pF Qg 100 120 nC 20 30 nC 60 90 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C 100 ns IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 V CES, RG = Roff = 82 Ω 200 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 500 1000 ns 17N100U1 17N100AU1 750 450 750 ns ns 17N100AU1 3 mJ 100 ns 200 ns Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 300 µH 2.5 VCE = 0.8 V CES, RG = Roff = 82 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 1 = Gate 2 = Collector 3 = Emitter Tab = Collector mJ 700 1000 ns 17N100U1 17N100AU1 1200 750 2000 1000 ns ns 17N100U1 17N100AU1 8 6 RthJC TO-247 AD Outline mJ mJ 0.83 K/W RthCK 0.25 Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF /dt = 240 A/µs VR = 540 V TJ = 125°C IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C 16 120 35 2.5 V 18 A ns ns 50 RthJC 1 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH 17N100U1 IXGH 17N100AU1 Fig. 1 Saturation Characteristics 35 30 T J = 25°C V GE = 15V 125 9V 13V 25 IC - Amperes IC - Amperes 150 13V 11V VGE = 15V TJ = 25°C Fig. 2 Output Characterstics 20 15 7V 10 100 75 11V 50 9V 5 25 0 0 7V 0 1 2 3 4 5 6 7 0 2 4 6 8 VCE - Volts VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 Fig. 4 Temperature Dependence of Output Saturation Voltage 1.4 TJ = 25°C 9 IC = 34A 1.3 V(sat) - Normalized 8 VCE - Volts 7 6 5 IC = 34A 4 IC = 17A 3 IC = 8.5A 2 1.2 1.1 1.0 IC = 17A 0.9 0.8 IC = 8.5A 0.7 1 0.6 0 5 6 7 8 9 10 11 12 13 14 15 -50 -25 0 VGE - Volts 1.2 75 100 125 150 V GE(th) IC = 250µA VCE= 10V BV / V(th) - Normalized 30 25 20 15 T J = 25°C T J = 125°C 5 50 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 35 10 25 TJ - Degrees C Fig. 5 Input Admittance IC - Amperes 10 12 14 16 18 20 1.1 1.0 BVCES 0.9 IC = 3mA 0.8 0.7 T J = - 40°C 0 0 1 2 3 4 5 6 7 8 9 0.6 -50 10 VCE - Volts 0 25 50 75 TJ - Degrees C 17N100G1 JNB © 1996 IXYS All rights reserved -25 100 125 150 IXGH 17N100U1 IXGH 17N100AU1 Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area 15 100 13 VCE = 800 IC = 17A 10 IC - Amperes VGE - Volts 11 IG = 10mA 9 7 5 T J = 125°C dV/dt < 3V/ns 1 0.1 3 1 0.01 0 10 20 30 40 50 60 70 80 90 100 0 200 Gate Charge - (nC) 400 600 800 1000 VCE - Volts Fig.9 Capacitance Curves 2000 f = 1MHz Capacitance - pF 1750 1500 Cies 1250 1000 17N100g2.JNB 750 500 C oes 250 C res 0 0 5 10 15 20 25 VCE - Volts Fig.10 Transient Thermal Impedance 1 D=0.5 Zthjc (K/W) D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 D = Duty Cycle Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH 17N100U1 IXGH 17N100AU1 Fig.12 Peak Forward Voltage VFR and Forward Recovery Time tFR 100 50 40 VFR - Volts Current - Amperes 80 1000 TJ = 125°C IF =37A 60 TJ = 100°C 40 VFR 800 30 600 20 400 tfr TJ = 150°C 20 10 TJ = 25°C 0 0.5 200 0 1.0 1.5 2.0 2.5 3.0 3.5 0 100 200 Voltage Drop - Volts 300 400 diF /dt - A/µs Fig.13 Junction Temperature Dependence off IRM and Qr Fig.14 Reverse Recovery Chargee 1.4 4 max. IF = 30A TJ = 100°C VR = 540V Qr - nanocoulombs Normalized IRM /Q r 1.2 1.0 0.8 IRM 0.6 Qr 0.4 0 600 500 3 typ. IF = 60A 2 IF = 30A IF = 15A 1 0.2 0.0 0 0 40 80 120 160 1 10 TJ - Degrees C max. IF = 30A max. IF = 30A VR = 540V trr - nanoseconds IRM - Amperes 40 Fig.16 Reverse Recovery Time 0.8 TJ = 100°C 30 20 typ. IF = 60A 10 1000 diF /dt - A/µs Fig.15 Peak Reverse Recovery Current 50 100 TJ = 100°C VR = 540V 0.6 typ. IF = 60A 0.4 IF = 30A IF = 15A 0.2 IF = 30A IF = 15A 0 0.0 200 400 diF /dt - A/µs © 1996 IXYS All rights reserved 600 0 200 400 diF /dt - A/µs 600 tfr - nanoseconds Fig.11 Maximum Forward Voltage Drop IXGH 17N100U1 IXGH 17N100AU1 Fig.17 Diode Transient Thermal resistance junction to case RthJC - K/W 1.00 0.10 0.01 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025