IXGH20N120A3

GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE(sat) ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM TO-220AB (IXGP) 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 40 20 120 A A A SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 10Ω Clamped Inductive Load ICM = 40 @VCE ≤ 960 A V PC TC = 25°C TJ TJM Tstg Md FC Mounting Torque (TO-247 & TO-220) Mounting Force (TO-263) TL TSOLD Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Weight TO-263 TO-220 TO-247 180 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 10..65 / 2.2..14.6 Nm/lb.in. N/lb. 300 260 °C °C 2.5 3.0 6.0 g g g G CE C (Tab) TO-247 (IXGH) G C E G = Gate E = Emitter C (Tab) C = Collector Tab = Collector Features z z Optimized for Low Conduction Losses International Standard Packages Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1200 VGE(th) IC = 250μA, VCE = VGE 2.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 125°C Applications V TJ = 125°C IGES 2.3 2.5 5.0 V 25 1 μA mA ±100 nA 2.5 V V z z z z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100046A(11/09) IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 7 12 S 1075 80 27 pF pF pF 50 nC 7.3 nC 23 nC 16 44 2.85 290 715 ns ns mJ ns ns 6.47 mJ 16 50 5.53 310 1220 10.10 ns ns mJ ns ns mJ 0.50 0.21 0.69 °C/W °C/W °C/W Qg Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive Load, TJ = 25°°C IC = 20A, VGE = 15V VCE = 960V, RG = 10Ω Note 2 Eoff td(on) tri Eon td(off) tfi Eoff Inductive Load, TJ = 125°°C IC = 20A, VGE = 15V VCE = 960V, RG = 10Ω Note 2 RthJC RthCK TO-247 (IXGH) AD Outline TO-220 TO-247 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-220 (IXGP) Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. TO-263 (IXGA) Outline Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector 1 = Gate 2 = Collector 3 = Emitter Tab = Collector IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 140 40 VGE = 15V 13V 11V 35 VGE = 15V 120 100 25 IC - Amperes IC - Amperes 30 9V 20 15 7V 13V 80 11V 60 9V 40 10 20 5 5V 7V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 3.6 4 8 12 20 24 28 32 125 150 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 1.8 40 VGE = 15V 13V 11V 35 VGE = 15V 1.6 VCE(sat) - Normalized 30 IC - Amperes 16 VCE - Volts VCE - Volts 25 9V 20 15 7V I = 40A C 1.4 1.2 I C = 20A I C = 10A 1.0 10 0.8 5 5V 0 0.6 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 -50 4.0 -25 0 25 VCE - Volts 50 75 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 45 7.5 TJ = 25ºC 40 TJ = - 40ºC 25ºC 125ºC 6.5 35 I 4.5 C IC - Amperes 5.5 VCE - Volts 100 TJ - Degrees Centigrade = 40A 20A 3.5 30 25 20 15 10A 10 2.5 5 0 1.5 5 6 7 8 9 10 11 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 16 TJ = - 40ºC 14 14 VCE = 600V 12 12 I G = 10 mA 25ºC 10 VGE - Volts g f s - Siemens I C = 20A 125ºC 8 10 8 6 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 0 45 5 10 15 Fig. 9. Capacitance 25 30 35 40 45 50 Fig. 10. Reverse-Bias Safe Operating Area 45 10,000 40 f = 1MHz 35 Cies 30 1,000 IC - Amperes Capacitance - PicoFarads 20 QG - NanoCoulombs IC - Amperes Coes 100 25 20 15 10 5 Cres 0 200 10 0 5 10 15 20 25 30 35 40 TJ = 125ºC RG = 10Ω dv / dt < 10V / ns 300 400 500 VCE - Volts 600 700 800 900 1000 1100 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 26 --- TJ = 125ºC , VGE = 15V 22 18 22 Eoff 20 RG = 10Ω , VGE = 15V 16 20 14 I 18 = 40A C 12 16 10 14 8 I C = 20A 12 10 8 10 15 20 25 30 35 40 45 12 Eon 18 9 16 8 TJ = 125ºC 14 7 12 6 TJ = 25ºC 10 8 4 4 6 3 2 4 2 20 50 22 24 26 11 1700 10 1600 9 1500 14 7 I C = 40A 12 6 10 5 8 4 I C = 20A 6 2 35 45 55 65 75 85 95 105 115 tfi 550 I 1300 450 1100 400 1000 350 I 900 C = 40A 300 200 1 125 600 150 10 15 20 25 td(off) - - - - 360 1400 350 1300 45 50 tfi TJ = 25ºC 700 600 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 36 340 38 40 t f i - Nanoseconds 330 VCE = 960V 1100 320 1000 310 I C = 40A 900 I C 300 = 20A 800 290 290 700 280 280 600 300 34 td(off) - - - - 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 270 125 t d(off) - Nanoseconds 310 t d(off) - Nanoseconds t f i - Nanoseconds 40 350 1200 340 900 32 35 RG = 10Ω , VGE = 15V 320 30 30 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 330 28 500 1200 250 TJ = 125ºC 26 = 20A 700 1100 24 C 2 VCE = 960V 22 600 VCE = 960V 1400 RG = 10Ω , VGE = 15V 20 650 td(off) - - - - RG - Ohms tfi 800 40 800 1400 1000 38 TJ = 125ºC, VGE = 15V Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 1200 36 700 TJ - Degrees Centigrade 1300 34 3 4 25 32 t d(off) - Nanoseconds 8 E on - MilliJoules E off - MilliJoules ---- VCE = 960V 16 30 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds 18 Eon 28 IC - Amperes 22 RG = 10Ω , VGE = 15V 5 6 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 10 VCE = 960V RG - Ohms 20 11 ---- E on - MilliJoules VCE = 960V E on - MilliJoules E off - MilliJoules Eon - Eoff 24 E off - MilliJoules 24 20 IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 55 tri 160 TJ = 125ºC, VGE = 15V 50 td(on) - - - - 40 120 35 I 100 C = 40A 30 80 I C 25 = 20A 60 20 40 15 20 10 0 15 20 25 30 35 40 45 td(on) - - - - 22 RG = 10Ω , VGE = 15V 5 10 tri 140 120 21 VCE = 960V 100 20 TJ = 125ºC 80 19 TJ = 25ºC 60 18 40 17 20 16 0 15 20 50 t d(on) - Nanoseconds VCE = 960V 140 23 45 t r i - Nanoseconds 180 t d(on) - Nanoseconds t r i - Nanoseconds 200 22 24 26 28 30 32 34 36 38 40 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 28 140 tri td(on) - - - - 120 VCE = 960V 26 RG = 10Ω , VGE = 15V 24 100 22 I C = 40A 80 20 60 18 40 I C 16 = 20A 20 25 35 45 55 65 75 85 95 t d(on) - Nanoseconds t r i - Nanoseconds 160 105 115 14 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_20N120A3(4L)10-01-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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