IXGH20N60B

HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE(sat)typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1 ms 40 20 80 A A A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH ICM = 40 @ 0.8 VCES A PC Maximum Ratings TC = 25°C TJ TJM Tstg Md W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C Mounting torque, TO-247 AD Weight 1.13/10 Nm/lb.in. TO-247 TO-268 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC 6 4 600 2.5 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250mA, VGE = 0 V = 250 mA, VCE = VGE 1.7 G (TAB) E TO-247 AD (IXGH) C (TAB) 150 Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-268 (D3) (IXGT) 5.0 V V 200 1 mA mA ±100 nA 2.0 V G C G = Gate, E = Emitter, E C = Collector, TAB = Collector Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies Advantages • Space savings (two devices in one package) • High power density • Suitable for surface mounting • Switching speed for high frequency applications • Easy to mount with 1 screw,TO-247 (isolated mounting screw hole) 96533B (7/99) 1-4 IXGH 20N60B IXGT 20N60B Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % Cies Coes Cres VCE = 25 V, VGE = 0 V, f = 1 MHz Qg Qge Qgc IC = IC90, VGE = 15 V, VCE = 0.5 VCES td(on) t ri Eon td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff 9 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Note 1 Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Note 1 RthJC RthCK 17 S 1500 175 40 pF pF pF 90 11 30 nC nC nC 15 35 0.15 150 100 0.7 ns ns mJ ns ns mJ 200 150 1.0 15 35 0.15 220 140 1.2 ns ns mJ ns ns mJ 0.25 0.83 K/W K/W Note 1: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 TO-247 AD (IXGH) Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGH 20N60B IXGT 20N60B 200 100 VGE = 15V 13V 11V TJ = 25°C 80 TJ = 25°C VGE = 15V 13V 160 IC - Amperes IC - Amperes 9V 60 7V 40 11V 120 9V 80 7V 40 20 5V 5V 0 0 0 1 2 3 4 0 5 2 4 8 10 VCE - Volts VCE - Volts Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics 1.75 100 VGE = 15V 13V 11V VGE = 15V VCE (sat) - Normalized TJ = 125°C 80 IC - Am eres 6 9V 60 40 7V 20 IC = 40A 1.50 1.25 IC = 20A 1.00 IC = 10A 0.75 5V 0.50 0 0 1 2 3 4 25 5 50 75 VCE - Volts 125 150 TJ - Degrees C Fig. 3. High Temperature Output Characteristics Fig. 4. Temperature Dependence of VCE(sat) 100 4000 VCE = 10V f = 1Mhz Capacitance - pF 80 IC - Amperes 100 60 40 TJ = 125°C Ciss 1000 Coss 100 Crss 20 TJ = 25°C 0 10 3 4 5 6 7 VGE - Volts Fig. 5. Admittance Curves © 2000 IXYS All rights reserved 8 9 10 0 5 10 15 20 25 30 35 40 VCE-Volts Fig. 6. Capacitance Curves 3-4 IXGH 20N60B IXGT 20N60B 3.0 4 6 8 TJ = 125°C TJ = 125°C RG = 10
4 1.5 3 E(ON) 1.0 2 E(OFF) 0.5 E(ON) - millijoules 2.0 IC =40A 3 6 E(OFF) E(ON) 2 4 IC = 20A E(ON) 1 E(OFF) 2 IC = 10A E(ON) 1 E(OFF) - millijoules E(ON) - millijoules 5 E(OFF) - milliJoules 2.5 E(OFF) 0.0 0 10 20 30 0 50 40 0 0 0 10 20 IC - Amperes 40 50 60 RG - Ohms Fig. 7. Dependence of EON and EOFF on IC. Fig. 8. Dependence of EON and EOFF on RG. 15 100 IC = 20A VCE = 300V 40 IC - Amperes 12 VGE - Volts 30 9 6 10 TJ = -55 to +125°C RG = 4.7
dV/dt < 5V/ns 1 3 0 0.1 0 20 40 60 80 100 0 Qg - nanocoulombs 100 200 300 400 500 600 VCE - Volts Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. IGBT Transient Thermal Resistance Junction-to-Case © 2000 IXYS All rights reserved 4-4