IXGH24N120C3

Preliminary Technical Information VCES = IC25 = VCE(sat) ≤ tfi(typ) = IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching 1200V 48A 4.2V 110ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM Continuous Transient IC25 IC100 ICM TC = 25°C TC = 100°C TC = 25°C, 1ms IA TC = 25°C 20 A EAS TC = 25°C 250 mJ SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 5Ω Clamped inductive load @VCE ≤ 1200V ICM = 48 A PC TC = 25°C 250 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 300 260 °C °C 2.5 6.0 3.0 g g g TJ TJM Tstg Md Mounting torque TL TSOLD Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Weight TO-263 TO-247 TO-220 1200 1200 V V ±20 ±30 V V 48 24 96 A A A G E C (TAB) TO-247 (IXGH) G C C (TAB) E TO-220 (IXGP) G C (TAB) C E G = Gate E = Emitter C = Collector TAB = Collector Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V IGES VCE(sat) Characteristic Values Min. Typ. Max. = 250μA, VGE = 0V = 250μA, VCE = VGE 1200 2.5 TJ = 125°C VCE = 0V, VGE = ±20V IC 5.0 V V 100 1.5 μA mA ±100 = 20A, VGE = 15V, Note 2 TJ = 125°C 3.6 3.1 z 4.2 nA V V z z Applications z z z z z © 2008 IXYS CORPORATION, All rights reserved International standard packages: JEDEC TO-247AD MOS Gate turn-on - drive simplicity Avalanche rated AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies DS99851A(01/08) IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs IC = 24A, VCE = 10V, Note 2 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 10 17 S 1900 125 52 pF pF pF 79 nC 12 nC 36 nC 16 27 1.16 93 110 ns ns mJ ns ns Qg Qge IC = 24A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°°C IC = 20A, VGE = 15V VCE = 600V, RG = 5Ω Note 1 Eoff 0.47 td(on) tri Eon td(off) tfi Eoff IC = 20A, VGE = 15V VCE = 600V, RG = 5Ω Note 1 RthJC RthCK Notes: 16 35 2.18 125 305 1.18 Inductive load, TJ = 125°°C TO-220 TO-247 1. 2. TO-247 (IXGH) AD Outline 0.50 0.21 0.85 mJ 2.00 ns ns mJ ns ns mJ 1 = Gate 2 = Collector 3 = Emitter Tab = Collector 0.50 °C/W °C/W °C/W TO-220 (IXGP) Outline Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-263 (IXGA) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 180 50 VGE = 15V VGE = 15V 13V 11V 45 40 160 140 13V 9V IC - Amperes IC - Amperes 35 30 25 7V 20 120 11V 100 80 60 15 9V 40 10 20 5 7V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 2 4 6 8 Fig. 3. Output Characteristics @ 125ºC 12 14 16 18 20 22 24 26 Fig. 4. Dependence of VCE(sat) on Junction Temperature 50 1.4 VGE = 15V 13V 11V 40 VGE = 15V 1.3 I 35 VCE(sat) - Normalized 45 IC - Amperes 10 VCE - Volts VCE - Volts 9V 30 25 7V 20 15 C = 48A 1.2 1.1 1.0 I C = 24A I C = 12A 0.9 0.8 10 0.7 5V 5 0.6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 5.5 -25 0 VCE - Volts 25 50 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 100 125 150 Fig. 6. Input Admittance 60 8.0 55 TJ = 25ºC 7.5 TJ = - 40ºC 25ºC 125ºC 50 I 6.5 C 45 = 48A 24A 12A IC - Amperes 7.0 VCE - Volts 75 TJ - Degrees Centigrade 6.0 5.5 5.0 40 35 30 25 20 4.5 15 4.0 10 3.5 5 3.0 0 5 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 Fig. 7. Transconductance Fig. 8. Gate Charge 16 26 TJ = - 40ºC 24 I C = 24A 20 I G = 10 mA 12 25ºC 18 VGE - Volts g f s - Siemens VCE = 600V 14 22 16 125ºC 14 12 10 10 8 6 8 4 6 4 2 2 0 0 0 10 20 30 40 50 60 70 80 0 10 20 IC - Amperes 30 40 50 60 70 80 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 55 10,000 f = 1 MHz 50 40 Cies 1,000 IC - Amperes Capacitance - PicoFarads 45 Coes 100 35 30 25 20 15 10 Cres 5 5 10 15 20 25 30 35 RG = 5Ω dV / dt < 10V / ns 0 200 10 0 TJ = 125ºC 40 400 600 800 1000 1200 1400 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_24N120C3(4N)01-15-08C IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 1.4 2.6 1.8 1.3 2.4 1.6 I 4 6 8 10 12 14 16 18 1.6 1.0 1.4 TJ = 125ºC 1.0 1.2 0.4 0.8 1.0 0.2 0.8 0.0 1.4 0.5 1.2 0.6 0.8 0.6 TJ = 25ºC 11 12 13 2.8 360 2.4 340 0.4 0.8 t f - Nanoseconds 1.2 - MilliJoules 0.6 on 1.6 0.2 0.0 55 65 75 85 95 105 115 320 280 280 I C 200 I 220 0.0 125 200 C = 10A 160 120 80 4 6 8 10 12 14 16 18 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 130 340 125 350 140 105 VCE = 600V 140 100 100 95 t f - Nanoseconds 110 120 I C = 20A 200 110 I 150 C = 10A 100 100 TJ = 25ºC 20 85 10 11 12 13 14 15 16 17 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 18 90 90 19 20 50 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 80 125 - Nanoseconds td(off) - - - - RG = 5Ω , VGE = 15V VCE = 600V 250 d(off) 115 t d(off) - Nanoseconds TJ = 125ºC 130 RG = 5Ω , VGE = 15V 120 260 td(off) - - - - tf t 300 60 20 RG - Ohms 300 t f - Nanoseconds 240 = 20A 260 0.4 380 180 360 300 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 20 VCE = 600V TJ - Degrees Centigrade 220 19 td(off) - - - - tf 240 I C = 10A 45 18 400 320 2.0 0.8 35 17 t d(off) - Nanoseconds VCE = 600V 25 16 TJ = 125ºC, VGE = 15V I C = 20A E Eoff - MilliJoules ---- RG = 5Ω , VGE = 15V 1.0 15 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 1.4 Eon 14 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.6 0.4 10 20 RG - Ohms 1.2 1.8 VCE = 600V 1.2 1.6 I C = 10A 2.0 0.8 0.9 0.7 ---- - MilliJoules 1.8 VCE = 600V Eon RG = 5Ω , VGE = 15V on 2.0 --- Eoff E Eon - - MilliJoules 1.0 TJ = 125ºC , VGE = 15V on Eoff 2.2 1.4 2.2 = 20A E 1.1 C Eoff - MilliJoules 1.2 Eoff - MilliJoules Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 60 td(on) - - - - tr 50 TJ = 125ºC, VGE = 15V I C 22 = 20A 40 19 35 18 30 17 I C = 10A 25 16 20 15 15 14 10 34 13 6 8 10 12 14 16 18 17.0 RG = 5Ω , VGE = 15V 16.5 VCE = 600V 30 16.0 26 15.5 TJ = 125ºC, 25ºC 22 15.0 18 14.5 14 14.0 10 20 13.5 10 RG - Ohms t d(on) - Nanoseconds 20 td(on) - - - - tr 38 t d(on) - Nanoseconds 45 4 17.5 21 t r - Nanoseconds 55 VCE = 600V t r - Nanoseconds 42 23 11 12 13 14 15 16 17 18 19 20 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 40 19 td(on) - - - - tr RG = 5Ω , VGE = 15V 35 18 30 I C = 20A 17 25 16 20 15 15 I C 14 = 10A 10 25 35 45 55 65 75 85 t d(on) - Nanoseconds t r - Nanoseconds VCE = 600V 95 105 115 13 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_24N120C3(4N)01-15-08-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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