IXGH24N170AH1

Preliminary Technical Information High Voltage IGBTs w/Diode IXGH24N170AH1 IXGT24N170AH1 VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1700V 24A 6.0V 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1ms 24 16 75 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load ICM = 50 0.8 • VCES A V tSC TJ = 125°C, VCE = 1200V, VGE = 15V, RG = 22Ω 10 μs PC TC = 25°C 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 4 g g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 G C C (TAB) E TO-268 (IXGT) G E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z z z Optimized for Low Conduction and Switching Losses Anti-Parallel Ultra Fast Diode International Standard Packages Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V 1700 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 16A, VGE = 15V, Note 1 z Characteristic Values Min. Typ. Max. V 5.0 100 μA 1.5 mA TJ = 125°C 4.5 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved V 4.8 ±100 nA 6.0 V V High Power Density Low Gate Drive Requirement Applications z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines DS99413A(05/09) IXGH24N170AH1 IXGT24N170AH1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 24A, VCE = 10V, Note 2 13 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg 22 S 2860 198 58 pF pF pF 140 nC 18 nC 60 nC 21 36 2.97 336 40 80 ns ns mJ ns ns 0.79 1.50 mJ IC = 16A, VGE = 15V, VCE = 0.5 • VCES Qge Qgc td(on) tri Eon td(off) tfi Inductive Load, TJ = 25°C IC = 24A, VGE = 15V VCE = 0.5 • VCES, RG = 10Ω Note 1 Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-247 (IXGH) Outline Inductive Load, TJ = 125°C IC = 24A, VGE = 15V VCE = 0.5 • VCES, RG = 10Ω Note 1 23 31 3.60 360 96 1.47 ns ns mJ ns ns mJ (TO-247) 0.21 0.50 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXGT) Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IF = 20A, VGE = 0V IRM trr IRM trr Characteristic Values Min. Typ. Max. 2.5 2.5 TJ = 125°C 15 80 20 200 IF = 20A, -diF/dt = 150A/μs, VR = 1200V, VGE = 0V TJ = 125°C RthJC Notes: 2.95 V V A ns A ns 0.9 °C/W 1. 2. Switching times may increase for VCE (Clamp) > 0.5 • VCES, higher TJ or increased RG. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH24N170AH1 IXGT24N170AH1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 48 180 VGE = 15V 13V 11V 44 40 9V 36 140 32 11V 120 7V 28 IC - Amperes IC - Amperes VGE = 15V 13V 160 24 20 16 12 100 9V 80 60 7V 40 8 20 5V 4 5V 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 5 10 15 25 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 48 1.8 VGE = 15V 13V 11V 9V 40 36 VGE = 15V 1.6 VCE(sat) - Normalized 44 IC - Amperes 20 VCE - Volts VCE - Volts 32 28 7V 24 20 16 12 8 1.4 I C = 48A I C = 24A I C = 12A 1.2 1.0 0.8 0.6 5V 4 0.4 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -50 9.0 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 75 100 125 150 Fig. 6. Input Admittance 60 9.5 55 TJ = 25ºC 8.5 C 50 45 = 48A IC - Amperes I 7.5 VCE - Volts 50 TJ - Degrees Centigrade 6.5 5.5 24A 40 35 TJ = 125ºC 25ºC - 40ºC 30 25 20 4.5 15 10 3.5 5 12A 2.5 0 5 6 7 8 9 10 11 12 13 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 14 15 3.5 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 8.5 IXGH24N170AH1 IXGT24N170AH1 Fig. 7. Transconductance Fig. 8. Gate Charge 36 16 TJ = - 40ºC 32 I C = 24A 25ºC 24 12 125ºC I G = 10mA 10 VGE - Volts g f s - Siemens VCE = 850V 14 28 20 16 8 6 12 4 8 2 4 0 0 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 60 10,000 f = 1 MHz 40 1,000 IC - Amperes Capacitance - PicoFarads 50 Cies Coes 100 30 20 TJ = 125ºC 10 Cres 10 0 5 10 15 20 25 30 35 40 RG = 10Ω dV / dt < 10V / ns 0 200 400 600 VCE - Volts 800 1000 1200 1400 1600 1800 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_24N170(6N)05-07-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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