IXGH25N100A

VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C 50 A I C90 T C = 90°C I CM T C = 25°C, 1 ms SSOA (RBSOA) V GE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH PC T C = 25°C 25 A 100 A ICM = 50 @ 0.8 VCES A 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g I C25 VCE(sat) 50 A 50 A 3.5 V 4.0 V TO-247 AD (IXGH) G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l BVCES IC = 3 mA, VGE = 0 V VGE(th) IC = 250 µA, VCE = VGE I CES V CE = 0.8 • VCES V GE = 0 V I GES V CE = 0 V, VGE = ±20 V VCE(sat) IC 1000 2.5 V 5 V l l l = IC90, VGE = 15 V TJ = 25°C TJ = 125°C 25N100 25N100A 250 1 µA mA ±100 nA 3.5 4.0 V V l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density l l © 1996 IXYS All rights reserved 91516E (3/96) IXGH 25N100 IXGH 25N100A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 8 Cies C oes 15 S 2750 pF 200 pF 50 pF VCE = 25 V, VGE = 0 V, f = 1 MHz C res Qg Q ge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Q gc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 V CES, RG = Roff = 33 Ω Remarks: Switching times may increase 25N100A for VCE (Clamp) > 0.8 • V CES, 25N100A higher TJ or increased RG Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 V CES, RG = Roff = 33 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 130 180 nC 25 60 nC 55 90 nC 100 ns 200 ns 500 ns 500 ns 5 mJ 100 ns 250 ns 3.5 mJ 720 1000 ns 25N100 25N100A 950 800 3000 1500 ns ns 25N100 25N100A 10 8 TO-247 AD Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector mJ mJ 0.62 K/W RthJC RthCK IXGM 25N100 IXGM 25N100A 0.25 TO-204AE Outline K/W 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH 25N100 IXGH 25N100A Fig. 1 Saturation Characteristics 50 200 9V 40 160 35 140 30 25 7V 20 15 13V 11V 120 100 80 9V 60 10 40 5 20 0 VGE = 15V TJ = 25°C 180 IC - Amperes IC - Amperes Fig. 2 Output Characterstics 13V 11V VG E= 15V TJ = 25°C 45 7V 0 0 1 2 3 4 5 0 2 4 6 8 VCE - Volts 14 16 18 20 Fig. 4 Temperature Dependence of Output Saturation Voltage 1.5 10 9 TJ = 25°C VCE(sat) - Normalized 7 6 IC = 50A 5 4 3 IC = 25A 2 IC = 12.5A 0 7 8 1.3 1.2 1.1 IC = 25A 1.0 0.9 IC = 12.5A 0.8 1 6 IC = 50A 1.4 8 VCE - Volts 10 12 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 9 10 11 12 13 14 0.7 -50 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Input Admittance Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 50 1.2 VGE(th) VCE = 10V BV / V(th) - Normalized 40 IC - Amperes IXGM 25N100 IXGM 25N100A 30 20 TJ = 25°C 10 TJ = 125°C IC = 250µA 1.1 1.0 0.9 BV CES IC = 250µA 0.8 0.7 TJ = - 40°C 0 0 1 2 3 4 5 6 7 8 9 0.6 -50 10 VGE - Volts 0 25 50 75 TJ - Degrees C 25N100g1.JNB © 1996 IXYS All rights reserved -25 100 125 150 IXGH 25N100 IXGH 25N100A Fig.7 Gate Charge 15 100 10 IC - Amperes 11 VGE - Volts Fig.8 Turn-Off Safe Operating Area VCE = 800V IC = 25A IG = 10mA 13 IXGM 25N100 IXGM 25N100A 9 7 5 T J = 125°C dV/dt < 3V/ns 1 0.1 3 1 0.01 0 25 50 75 100 125 150 0 200 400 Gate Charge - nCoulombs 600 800 1000 V CE - Volts Fig.9 Capacitance Curves f = 1MHz Capacitance - pF 2400 Cies 2000 1600 25N100g2.JNB 1200 800 Coes 400 Cres 0 0 5 10 15 20 25 V CE - Volts Fig.10 Transient Thermal Impedance 1 Zthjc (K/W) D=0.5 D=0.2 0.1 D=0.1 D = Duty Cycle D=0.05 D=0.02 D=0.01 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025