IXGH25N100U1

Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 VCE(sat) 50 A 50 A 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90 TC = 90°C 25 A I CM TC = 25°C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH ICM = 50 @ 0.8 VCES A PC TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 G G = Gate E = Emitter C E C = Collector TAB = Collector Features International standard package JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM l l Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l l l l BVCES IC = 4.5 mA, VGE = 0 V 1000 VGE(th) IC = 500 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 1996 IXYS All rights reserved TJ = 25°C TJ = 125°C V 5.5 V 500 8 µA mA ±100 nA 3.5 4.0 V V l Advantages l l 25N100U1 25N100AU1 AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies ll Saves space (two devices in one package) Easy to mount (isolated mounting screw hole) Reduces assembly time and cost 95587 (9/96) IXGH25N100U1 IXGH25N100AU1 Symbol Test Conditions gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes Cres Qg Qge Qgc Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VCE = 25 V, VGE = 0 V, f = 1 MHz 15 S 2750 270 50 pF pF pF 130 25 55 IC = IC90, VGE = 15 V, VCE = 0.5 VCES td(on) tri td(off) tfi Eoff Inductive load, T J = 25°°C IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 VCES, RG = Roff = 33 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(on) tri Eon td(off) tfi Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 V CES, RG = Roff = 33 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG Eoff 8 25N100AU1 25N100AU1 ns ns ns ns mJ 25N100U1 25N100AU1 25N100U1 25N100AU1 100 250 3.5 720 950 800 10 6 ns ns mJ ns ns ns mJ mJ 0.25 Symbol Test Conditions VF IF = IC90, VGE = 0 V, nC nC nC 100 200 500 500 5 RthJC RthCK Reverse Diode (FRED) 180 60 90 1000 3000 TO-247 AD Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector 0.62 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 V 18 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IRM IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs trr VR = 540 V TJ =125°C 120 IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C 35 16 ns 50 RthJC ns 1 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH25N100U1 IXGH25N100AU1 © 1996 IXYS All rights reserved IXGH25N100U1 IXGH25N100AU1 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH25N100U1 IXGH25N100AU1 Fig.12 Peak Forward Voltage VFR and Forward Recovery Time tFR 100 50 40 VFR - Volts Current - Amperes 80 1000 TJ = 125°C IF =37A 60 TJ = 100°C 40 VFR 800 30 600 20 400 tfr TJ = 150°C 20 10 TJ = 25°C 0 0.5 200 0 1.0 1.5 2.0 2.5 3.0 3.5 0 100 200 Voltage Drop - Volts 300 400 diF /dt - A/µs Fig.13 Junction Temperature Dependence off IRM and Qr Fig.14 Reverse Recovery Chargee 1.4 4 max. IF = 30A TJ = 100°C VR = 540V Qr - nanocoulombs Normalized IRM /Q r 1.2 1.0 0.8 IRM 0.6 Qr 0.4 0 600 500 3 typ. IF = 60A 2 IF = 30A IF = 15A 1 0.2 0.0 0 0 40 80 120 160 1 10 TJ - Degrees C max. IF = 30A max. IF = 30A VR = 540V trr - nanoseconds IRM - Amperes 40 Fig.16 Reverse Recovery Time 0.8 TJ = 100°C 30 20 typ. IF = 60A 10 1000 diF /dt - A/µs Fig.15 Peak Reverse Recovery Current 50 100 TJ = 100°C VR = 540V 0.6 typ. IF = 60A 0.4 IF = 30A IF = 15A 0.2 IF = 30A IF = 15A 0 0.0 200 400 diF /dt - A/µs © 1996 IXYS All rights reserved 600 0 200 400 diF /dt - A/µs 600 tfr - nanoseconds Fig.11 Maximum Forward Voltage Drop IXGH25N100U1 IXGH25N100AU1 Fig.17 Diode Transient Thermal resistance junction to case RthJC - K/W 1.00 0.10 0.01 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025