IXGH25N250

Preliminary Technical Information IXGH25N250 IXGT25N250 IXGV25N250S High Voltage IGBT For Capacitor Discharge Applications VCES = 2500 V IC25 = 60 A VCE(sat) ≤ 2.9 V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 2500 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 25 A ICM TC = 25°C, VGE = 20 V, 1 ms 200 A SSOA (RBSOA) VGE = 20 V, TJ = 125°C, RG = 20 Ω Clamped inductive load @ 1250V ICM = 240 A PC TC = 25°C 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 °C Md Mounting torque (TO-247) 1.13/10 Nm/lb-in 6 4 g g TO-247 TO-268 Symbol Test Conditions BVCES IC = 250 μA, VGE = 0 V 2500 VGE(th) IC = 250 μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC IC Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. TJ = 125°C = 25 A, VGE = 15 V = 75 A © 2007 IXYS CORPORATION, All rights reserved C C (TAB) E TO-268 (IXGT) G E C (TAB) PLUS220SMD (IXGV...S) TL Weight G G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features High peak current capability Low saturation voltage MOS Gate turn-on -drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification V 5.0 V 50 1 μA mA ±100 nA 2.9 5.2 V V Applications Capacitor discharge Pulser circuits Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS99760 (04/07) IXGH25N250 IXGT25N250 IXGV25N250S Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs IC = 50 A; VCE = 10 V, Note 1 IC(ON) Cies 16 26 S VGE = 15V, VCE = 20V, Note 1 240 A VCE = 25 V, VGE = 0 V, f = 1 MHz 2310 pF Coes 75 pF Cres 23 pF 75 nC Qge 15 nC Qgc 30 nC 68 ns 233 ns 209 ns 200 ns Qg IC = 50 A, VGE = 15 V, VCE = 0.5 VCES Resistive load tri IC = 50 A, VGE = 15 V, Note 1 VCE = 1250 V, RG = 5 Ω 2 ∅P 3 e tfi Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Tab - Drain (Collector) Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 0.5 °C/W RthJC RthCS 1 Dim. td(on) td(off) TO-247 (IXGH) Outline (TO-247) 0.25 °C/W Notes: 1. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 % 2. Additional provisions for lead-to-lead voltage isolation are required at VCE > 1200 V PLUS220SMD (IXGV_S) Outline Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXGT) Outline (D3-Pak) PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Ref: IXYS CO 0052 RA IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH25N250 IXGT25N250 IXGV25N250S Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 250 150 V GE = 25V 135 20V 200 15V 120 175 90 IC - Amperes 105 IC - Amperes V GE = 25V 225 20V 10V 75 60 125 100 45 75 30 50 15 25 0 15V 150 10V 0 0 1 2 3 4 5 6 7 8 0 2 4 6 8 Fig. 3. Output Characteristics @ 125ºC 12 14 16 18 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.4 200 V GE = 25V 180 V GE = 15V 2.2 20V 2 VCE(sat) - Normalized 160 140 IC - Amperes 10 VCE - Volts VCE - Volts 15V 120 100 10V 80 60 1.6 I C = 100A 1.4 1.2 I C = 50A 1 40 0.8 20 0.6 0 I C = 150A 1.8 0.4 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 12 13 TJ - Degrees Centigrade VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 10 V GE = 15V 180 9 IC - Amperes VCE - Volts 8 I C = 150A 7 6 160 TJ = - 40ºC 140 25ºC 125ºC 120 100 80 I C = 100A 60 5 40 4 I C = 50A 20 3 0 7 8 9 10 11 12 13 14 VGE - Volts © 2007 IXYS CORPORATION, All rights reserved 15 16 17 4 5 6 7 8 9 VGE - Volts 10 11 IXGH25N250 IXGT25N250 IXGV25N250S Fig. 8. Resistive Turn-on Rise Time vs. Junction Temperature 36 680 33 640 RG = 5Ω 30 600 VGE = 15V 27 560 VCE = 1250V t r - Nanoseconds g f s - Siemens Fig. 7. Transconductance 24 21 18 TJ = - 40ºC 15 25ºC 125ºC 12 520 480 440 I C = 50A 400 360 9 320 6 280 3 240 0 I C = 150A 200 0 20 40 60 80 100 120 140 160 180 200 25 35 45 55 I C - Amperes Fig. 9. Resistive Turn-on Rise Time vs. Collector Current RG = 5Ω TJ = 125ºC VGE = 15V 600 95 500 450 TJ = 25ºC 400 105 115 700 124 680 120 660 116 640 550 t r - Nanoseconds t r - Nanoseconds 85 350 112 I C = 150A 620 108 600 104 td(on) - - - - tr 580 100 TJ = 125ºC, V GE = 15V 560 96 VCE = 1250V 540 300 520 250 500 200 92 88 I C = 50A 84 480 50 60 70 80 90 100 110 120 130 140 80 4 150 6 8 10 I C - Amperes 245 240 20 170 215 160 210 150 I C = 150A, 50A t f - Nanoseconds 180 210 RG = 5Ω, VGE = 15V 200 VCE = 1250V 230 190 225 180 220 170 215 160 TJ = 25ºC 210 TJ = 125ºC 150 205 140 205 140 200 130 200 130 195 120 195 120 190 110 105 115 125 190 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. 50 60 70 80 90 100 110 120 I C - Amperes 110 130 140 150 t d ( o f f ) - Nanoseconds I C = 50A, 150A 220 220 235 t d ( o f f ) - Nanoseconds 190 VCE = 1250V 18 td(off) - - - - tf 240 200 td(off) - - - - RG = 5Ω, VGE = 15V 225 16 245 210 tf 14 Fig. 12. Resistive Turn-off Switching Times vs. Collector Current 220 230 12 RG - Ohms Fig. 11. Resistive Turn-off Switching Times vs. Junction Temperature 235 125 t d ( o n ) - Nanoseconds VCE = 1250V t f - Nanoseconds 75 Fig. 10. Resistive Turn-on Switching Times vs. Gate Resistance 700 650 65 TJ - Degrees Centigrade IXGH25N250 IXGT25N250 IXGV25N250S Fig. 13. Resistive Turn-off Switching Times vs. Gate Resistance 260 Fig. 14. Gate Charge 280 td(off) - - - - 250 14 t f - Nanoseconds 240 220 235 205 230 190 I C = 150A, 50A 175 220 160 215 145 210 130 205 115 200 t d ( o f f ) - Nanoseconds 235 6 8 10 12 14 16 18 I G = 10 mA 12 10 8 6 4 2 0 100 4 I C = 50A 250 V CE = 1250V 245 225 VCE = 1250V 265 TJ = 125ºC, VGE = 15V VGE - Volts tf 255 16 0 20 10 20 30 40 50 60 70 80 30 35 40 QG - NanoCoulombs RG - Ohms Fig. 15. Reverse-Bias Safe Operating Area Fig. 16. Capacitance 280 10000 f = 1 MHz Capacitance - PicoFarads 240 I C - Amperes 200 160 120 80 TJ = 125ºC C ies 1000 C oes 100 RG = 20Ω dV / dT < 10V / ns 40 C res 10 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0 5 10 15 20 25 V CE - Volts V CE - Volts Fig. 17. Maximum Transient Thermal Impedance Z ( t h ) JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2007 IXYS CORPORATION, All rights reserved IXYS REF: G_25N250 (5P-P528) 04-27-07-D.xls Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: IXGH25N250