IXGH28N120BD1

IXGH28N120BD1 IXGT28N120BD1 High Voltage IGBT w/ Diode VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1200V 50A 3.5V 170ns TO-247AD (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC100 IF90 ICM TC TC TC TC 50 28 10 150 A A A A SSOA VGE = 15V, TJ = 125°C, RG = 5Ω ICM = 120 A (RBSOA) Clamped Inductive Load PC TC = 25°C = 25°C ( Chip Capability ) = 100°C = 90°C = 25°C, 1ms 0.8 • VCES TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md Mounting Torque (TO-247) Weight TO-247 TO-286 G C (TAB) E TO-268 (IXGT) G E C (TAB) 250 W G = Gate E = Emitter -55 ... +150 150 -55 ... +150 °C °C °C Features 300 260 °C °C 1.13/10 Nm/lb.in. 6 4 g g z z z z C = Collector TAB = Collector International Standard Packages JEDEC TO-247AD & TO-268 IGBT and Anti-Parallel FRED for Resonant Power Supplies - Induction Heating - Rice Cookers MOS Gate Turn-On Fast Recovery Expitaxial Diode (FRED) - Soft Recovery with Low IRM Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE= 0V Characteristic Values Min. Typ. Max. 2.5 TJ = 125°C, Note1 IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 28A, VGE = 15V, Note 2 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2.9 2.8 z 5.0 V 50 250 μA μA ±100 nA 3.5 V V z Saves Space (Two Devices in One Package) Easy to Mount with 1 Screw (Isolated Mounting Screw Hole) Reduces Assembly Time and Cost Applications • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • DC Choppers • AC Motor Speed Drives • DC Servo and Robot Drives DS98988G(08/09) IXGH28N120BD1 IXGT28N120BD1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC = 28A, VCE = 10V, Note 2 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 15 Qg Qge IC = 28A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Inductive load, TJ = 25°C TO-247 (IXGH) Outline 23 S 1700 130 45 pF pF pF 92 nC 13 nC 35 nC 30 20 ns ns IC = 28A, VGE = 15V VCE = 0.8 • VCES, RG = 5Ω Note 3 210 170 280 320 ns ns 2.2 5.0 mJ Inductive load, TJ = 125°C IC = 28A, VGE = 15V VCE = 0.8 • VCES, RG = 5Ω Note 3 35 28 1.4 250 340 4.6 ns ns mJ ns ns mJ (TO-247) 0.21 0.50 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXGT) Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IF = 10A, VGE = 0V, Note 2 IRM IF = 10A, VGE = 0V, -diF/dt = 400A/μs, VR = 600V trr trr Characteristic Values Min. Typ. Max. 3.2 TJ = 100°C IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V 2.3 V V 14 A 120 ns 40 ns RthJC 2.5 °C/W Notes: 1. Part must be heatsunk for high-temp ICES measurement. 2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 3. Switching times & energy loses may increase for higher VCE(Clamp), TJ or RG. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH28N120BD1 IXGT28N120BD1 Fig. 1. Output Characte ristics @ 25 ºC Fig. 2. Exte nde d Output Characte ris tics @ 25 ºC 240 56 VGE = 15V 49 15V 180 35 I C - Amperes I C - Amperes 42 VGE = 17V 210 13V 11V 9V 28 21 7V 13V 150 120 11V 90 9V 60 14 30 7 5V 7V 0 0 1 1.5 2 2.5 3 3.5 4 4.5 0 5 2 4 6 8 Fig. 3. Output Characteristics @ 125 ºC 14 16 18 20 1.4 VGE = 15V 49 13V 11V VGE = 15V 1.3 VC E (sat)- Normalized 42 I C - Amperes 12 Fig. 4. De pe nde nce of V CE(sat) on Te m pe rature 56 9V 35 28 7V 21 14 I C = 56A 1.2 1.1 I C = 28A 1.0 0.9 I C = 14A 0.8 7 5V 0 0.7 1 1.5 2 2.5 3 3.5 V CE - Volts 4 4.5 -50 5 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Colle ctor-to-Em itter Voltage vs. Gate-to-Em itte r voltage Fig. 6. Input Adm ittance 8 100 TJ = 25ºC 90 7 80 6 I C = 56A I C - Amperes VC E - Volts 10 V C E - Volts V C E - Volts 28A 14A 5 4 70 60 50 40 TJ = 125ºC 30 25ºC 20 3 -40ºC 10 2 0 6 7 8 9 10 11 12 13 V G E - Volts 14 15 © 2009 IXYS CORPORATION, All Rights Reserved 16 17 4 5 6 7 V G E - Volts 8 9 10 IXGH28N120BD1 IXGT28N120BD1 Fig. 8. Dependence of Turn-off Fig. 7. Transconductance Energy Loss on RG 35 18 TJ = -40ºC 25ºC 125ºC 25 Eo f f - milliJoules g f s - Siemens 30 20 15 10 16 TJ = 125ºC 14 VGE = 15V I C = 56A VCE = 960V 12 10 8 I C = 28A 6 4 5 I C = 14A 2 0 0 0 10 20 30 40 50 60 70 80 90 100 0 I C - Amperes Fig. 9. Dependence of Turn-Off Energy Loss on IC 10 8 VGE = 15V 7 VCE = 960V 8 VCE = 960V 5 4 TJ = 25ºC 3 0 35 40 45 50 55 I C = 14A 25 60 TJ = 125ºC VGE = 15V VCE = 960V 600 I C = 14A I C = 56A I C = 28A 400 Switching Time - nanoseconds tfi - - - - - - 800 55 65 75 85 95 105 115 125 Sw itching Tim e on IC 450 td(off) 1000 45 Fig. 12. Dependence of Turn-off Sw itching Tim e on RG 1200 35 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off 1400 100 3 0 30 90 4 1 I C - Amperes 80 I C = 28A 5 2 25 70 6 1 20 60 7 2 15 50 I C = 56A VGE = 15V 6 40 R G - Ohms R G = 5Ω 10 Eo f f - milliJoules Eo f f - MilliJoules 30 9 10 Switching Time - nanoseconds 20 Fig. 10. Depende nce of Turn-off Energy Loss on Tem perature 11 TJ = 125ºC R G = 5Ω 9 10 200 400 td(off) tfi - - - - - - 350 R G = 5Ω 300 TJ = 125ºC VGE = 15V VCE = 960V 250 200 TJ = 25ºC 150 100 0 10 20 30 40 50 60 R G - Ohms 70 80 90 100 IXYS reserves the right to change limits, test conditions and dimensions. 10 15 20 25 30 35 40 I C - Amperes 45 50 55 60 IXGH28N120BD1 IXGT28N120BD1 Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 450 16 400 tfi - - - - - - 350 R G = 5Ω I C = 28A 12 I G = 10mA I C = 14A VGE = 15V 300 VCE = 600V 14 I C = 56A VG E - Volts Switching Time - nanoseconds td(off) VCE = 960V I C = 28A 250 200 10 8 6 4 150 I C = 14A 2 I C = 56A 100 0 25 35 45 55 65 75 85 95 105 115 125 0 TJ - Degrees Centigrade 10 20 30 40 50 60 70 80 90 100 Q G - nanoCoulombs Fig. 16. Reverse-Bias Safe Operating Area Fig. 15. Capacitance 10000 140 f = 1 MHz 120 1000 I C - Amperes Capacitance - p F C ies C oes 100 100 80 60 TJ = 125ºC 40 R G = 5Ω 20 C res 10 dV/dT < 10V/ns 0 0 5 10 15 20 25 V C E - Volts 30 35 40 100 300 500 700 900 1100 1300 V C E - Volts Fig. 17. Maxim um Transient Therm al Resistance R ( t h ) J C - ºC / W 1.00 0.50 0.10 1 10 © 2009 IXYS CORPORATION, All Rights Reserved Pulse Width - milliseconds 100 1000 IXGH28N120BD1 IXGT28N120BD1 30 2000 A IF 25 nC 20 1500 Qr TVJ= 100°C A VR = 600V IRM IF= 20A IF= 10A IF= 5A TVJ=150°C 15 40 TVJ= 100°C VR = 600V 1000 30 IF= 20A IF= 10A IF= 5A 20 TVJ=100°C 10 500 TVJ= 25°C 10 5 0 0 1 2 3 VF 0 100 4 V 150 2.0 ns V FR trr 1.5 Kf 0.0 Qr 0 40 1000 TVJ= 100°C IF = 10A V tfr VFR 40 110 0.5 600 A/μs 800 -diF/dt 1.2 μs tfr 0.8 IF= 20A IF= 10A IF= 5A 120 IRM 400 80 130 1.0 200 120 TVJ= 100°C VR = 600V 140 0 Fig. 20. Peak reverse current IRM versus -diF/dt Fig. 19. Reverse recovery charge Qr versus -diF/dt Fig. 18. Forward current IF versus VF 0 A/μs 1000 -diF/dt 0.4 100 80 120 °C 160 90 0 T VJ 200 400 600 800 A/μs 1000 0 0 200 400 -diF/dt Fig. 21. Dynamic parameters Qr, IRM versus TVJ Fig. 22. Recovery time trr versus -diF/dt 10 K/W 0.0 600 A/μs 800 1000 diF/dt Fig. 23. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 Z thJC Rthi (K/W) ti (s) 1.449 0.558 0.493 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEP 8-12A 0.0001 0.001 0.01 0.1 s t 1 Fig. 24. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_28N120B(5Z)4-21-04-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.