IXGH28N60B3D1

Advance Technical Information IXGH28N60B3D1 PolarHVTM IGBT VCES = 600V = 28A IC110 VCE(sat) ≤ 1.8V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 66 A IC110 TC = 110°C 28 A IF110 TC = 110°C 10 A ICM TC = 25°C, 1ms 150 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load @ ≤ 600V ICM = 60 A PC TC = 25°C 190 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g TJ G 1.6mm (0.062 in.) from case for 10 seconds Plastic body for 10 seconds Md Mounting torque (M3) Weight Characteristic Values Min. Typ. Max. BVCES IC= 250μA, VGE= 0V 600 VGE(th) IC= 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V z z VCE = 0V, VGE = ± 20V VCE(sat) IC = 24A, VGE = 15V, Note 1 © 2007 IXYS CORPORATION, All rights reserved Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z z z z z PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers V TJ =125°C IGES C = Collector TAB = Collector Features z Symbol Test Conditions (TJ = 25°C unless otherwise specified) C (TAB) E G = Gate E = Emitter z TL TSOLD C 1.5 5.0 V 50 1.0 μA mA ±100 nA 1.8 V DS99906(09/07) IXGH28N60B3D1 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs IC Characteristic Values Min. Typ. Max. = IC110, VCE = 10V, Note 1 18 Cies VCE = 25V, VGE = 0V, f = 1MHz Coes TO-247 (IXGH) Outline 30 S 2320 pF 176 pF 24 pF Cres Qg 62 nC 11 nC Qgc 23 nC td(on) 19 ns 24 ns 0.34 mJ Qge IC tri = IC110, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°°C Eon IC = 24A, VGE = 15V td(off) VCE = 400V, RG = 10Ω 125 200 ns 100 160 ns Eoff 0.65 1.2 mJ td(on) 19 tfi tri Eon td(off) tfi ns Inductive load, TJ = 125°°C 26 ns 0.6 mJ IC = 24A, VGE = 15V 180 ns VCE = 400V, RG = 10Ω 170 ns 1.0 mJ Eoff 0.66 °C/W RthJC RthCS °C/W 0.21 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VF IF Characteristic Values Min. Typ. Max. = 24A, VGE = 0V, Note 1 2.5 1.7 TJ = 150°C IRM IF = 24A, VGE = 0V, -diF/dt = 100A/μs V V 5 A 25 ns 100 ns VR = 100V trr IF = 1A, -diF/dt =100A/μs, VR = 30V TJ= 100°C RthJC 1.0 K/W Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.