IXGH28N60BD1

Low VCE(sat) IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms 80 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load PC TC = 25°C ICM = 56 @ 0.8 VCES A 150 W -55 ... +150 °C 150 °C Tstg -55 ... +150 °C Md Mounting torque (M3) TO-247 G 300 6 4 C (TAB) C G = Gate, E = Emitter, E C = Collector, TAB = Collector Features z 1.13/10 Nm/lb.in. TO-247 TO-268 C (TAB) TO-247 AD (IXGH) z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight G E TJM TJ TO-268 (IXGT) °C z g g z International standard packages IGBT and anti-parallel FRED in one package Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VCE = VGE VGE(th) IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V 2.5 TJ = 25°C TJ = 125°C 5.5 V 200 3 µA mA ±100 nA 2.0 V z z z Advantages z z z z © 2003 IXYS All rights reserved AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density DS98567A(08/03) IXGH 28N60BD1 IXGT 28N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 15 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C tri IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 10 Ω td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff S 1500 pF 170 pF 40 pF 68 100 nC 15 30 nC 20 40 nC 15 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 25 = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 400 ns 260 400 ns 2 4 mJ ns 25 ns 1 mJ 400 ns 400 ns 3 mJ 0.83 K/W TO-247 Reverse Diode (FRED) Symbol ns 175 RthJC RthCK ns 15 Inductive load, TJ = 125°°C IC 25 Test Conditions 0.25 TO-247 AD Outline 1 2 3 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Terminals: 1 - Gate 2 - Collector 3 - Emitter Tab-Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF IF = IC90, VGE = 0 V, TJ = 150°C Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 25°C IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs VR = 100 V IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 100°C TJ = 25°C RthJC 1.6 2.5 6 100 25 V V Terminals: 1 - Gate 3 - Emitter 2 - Collector Tab - Collector A ns ns 1 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 28N60BD1 IXGT 28N60BD1 Fig. 1. Output Characte ristics @ 25 Deg. C Fig. 2. Extended Output Characte ristics @ 25 de g. C 240 60 VGE = 15V 13V 11V 9V 200 40 I C - Amperes I C - Amperes 50 VGE = 15V 30 7V 20 10 13V 160 11V 120 9V 80 40 7V 5V 5V 0 0 0.5 1 1.5 2 2.5 3 0 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 4 6 8 10 12 V C E - Volts 16 18 20 1.6 VGE = 15V 13V 11V 9V V GE = 15V 1.5 V C E (sat)- Normalized 50 40 30 7V 20 I C = 56A 1.4 1.3 1.2 I C = 28A 1.1 1.0 0.9 I C = 14A 10 0.8 5V 0 0.7 0.5 1 1.5 2 2.5 3 -50 3.5 -25 V CE - Volts 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 5 90 TJ = 25ºC 80 4.5 70 4 I C = 56A 28A 14A 3.5 3 I C - Amperes VC E - Volts 14 Fig. 4. De pende nce of V CE(sat) on Tem perature 60 I C - Amperes 2 2.5 60 50 40 30 2 20 1.5 10 1 0 6 7 8 9 10 11 12 13 V G E - Volts © 2003 IXYS All rights reserved 14 15 16 17 TJ = 125ºC 25ºC -40ºC 4 5 6 7 V G E - Volts 8 9 150 IXGH 28N60BD1 IXGT 28N60BD1 Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG 10.0 35 8.0 I C = 56A E off - milliJoules g f s - Siemens 25 TJ = 125ºC VGE = 15V VCE = 480V 9.0 TJ = -40ºC 25ºC 125ºC 30 20 15 10 7.0 6.0 5.0 I C = 28A 4.0 3.0 5 I C = 14A 2.0 0 1.0 0 10 20 30 40 50 60 70 80 90 10 I C - Amperes 30 70 90 110 R G - Ohms 130 150 Fig. 10. Dependence of Eoff on Tem perature Fig. 9. Dependence of Eoff on IC 8.0 8.0 R G = 10Ω R G = 82Ω - - - VGE = 15V VCE = 480V 6.0 R G = 10Ω R G = 82Ω - - - VGE = 15V VCE = 480V 7.0 6.0 E off - milliJoules 7.0 E off - MilliJoules 50 I C = 56A 5.0 5.0 4.0 4.0 TJ = 125ºC I C = 28A 3.0 3.0 2.0 2.0 TJ = 25ºC 1.0 1.0 0.0 0.0 25 10 20 30 40 50 45 55 65 75 I C = 14A 85 95 105 115 125 60 I C - Amperes TJ - Degrees Centigrade Fig. 11. Dependence of Sw itching Tim e on RG Fig. 12. Dependence of Sw itching Tim e on IC 600 1200 td(off) tfi - - - - - - 1000 TJ = 125ºC VGE = 15V VCE = 480V 900 800 700 600 I C = 14A I C = 56A 500 400 I C = 28A 300 td(off) tfi - - - - - - 550 Switching Time - nanosecond 1100 Switching Time - nanosecond 35 R G = 10Ω VGE = 15V VCE = 480V 500 450 400 TJ = 125ºC 350 300 250 TJ = 25ºC 200 150 200 10 30 50 70 90 R G - Ohms 110 130 150 10 20 30 40 50 60 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 28N60BD1 IXGT 28N60BD1 Fig. 13. Dependence of Sw itching Tim e on Tem perature Fig. 14. Gate Charge 500 15 td(off) tfi - - - - - R G = 10Ω VGE = 15V VCE = 480V 400 350 300 VCE = 300V IC = 28A IG = 10mA 12 I C = 56A VG E - Volts Switching Time - nanosecond 450 I C = 14A 9 6 I C = 28A 250 3 200 I C = 56A 150 0 25 35 45 55 65 75 85 95 105 115 125 0 10 20 TJ - Degrees Centigrade 30 40 50 60 70 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 30 35 40 V C E - Volts Fig. 16. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 1 0.5 0.1 1 10 100 Pulse Width - milliseconds © 2003 IXYS All rights reserved 1000 60 A TVJ= 100°C A nC 50 IF 30 1000 T = 100°C VJ 800 Qr 25 IF= 60A IF= 30A IF= 60A IF= 30A IRM 40 20 TVJ=150°C 30 600 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 0 100 3 V 2 5 0 A/µs 1000 -diF/dt VF Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr 2.0 90 IF= 60A IF= 30A IRM 1.00 µs VFR tfr 0.75 tfr 80 1.0 600 A/µs 800 1000 -diF/dt 400 Fig. 14 Peak reverse current IRM V VFR 15 trr Kf 200 20 TVJ= 100°C TVJ= 100°C ns 1.5 0 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 15 Dynamic parameters Qr, IRM Fig. 16 Recovery time trr versus -diF/dt 1 K/W 0.00 600 A/µs 800 1000 diF/dt Fig. 17 Peak forward voltage VFR and tfr Constants for ZthJC calculation: i 1 2 0.1 Rthi (K/W) ti (s) 0.502 0.193 0.0052 0.0003 ZthJC 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 s 0.1 1 t Fig. 18 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343