IXGH30N60B2D1

Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE(sat) tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 70 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms 150 A SSOA (RBSOA) PC VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C ICM = 60 A 190 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque (M3) (TO-247) Weight TO-247 TO-268 Symbol Test Conditions VGE(th) ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 24 A, VGE = 15 V © 2004 IXYS All rights reserved 1.13/10Nm/lb.in. 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. C (TAB) G 2.5 TJ = 25°C TJ = 150°C TJ = 25°C 5.0 V 200 3 µA mA ±100 nA 1.8 V C E TO-268 (IXGT) G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features z z z Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z z z = 250 µA, VCE = VGE IC TO-247 AD (IXGH) z Md = 600 V = 70 A < 1.8 V = 82 ns z z z PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers DS99134A(04/04) IXGH 30N60B2D1 IXGT 30N60B2D1 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 24 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 18 S 1500 pF 145 pF 40 pF ∅P Cies Coes 26 VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = 24 A, VGE = 15 V, VCE = 300 V Qgc td(on) tri Inductive load, TJ = 25°°C td(off) IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 Ω tfi Eoff Eon td(off) tfi Inductive load, TJ = 125°°C IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 Ω Eoff 66 nC 9 nC 22 nC 13 ns 15 ns 110 200 ns 82 150 ns 0.32 0.6 mJ 13 ns td(on) tri 17 ns 0.22 mJ 200 ns 150 ns 0.9 mJ RthJC RthCK TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.65 K/W (TO-247) Reverse Diode (FRED) 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 30 A, VGE = 0 V, Pulse test t ≤ 300 µs, duty cycle d ≤ 2 % IRM t rr IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C VR = 100 V TJ = 100°C 100 IF = 1 A; -di/dt = 100 A/µs; VR = 30 V 25 TJ =150°C 1.6 2.5 V V 4 A ns ns 0.9 K/W RthJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGH 30N60B2D1 IXGT 30N60B2D1 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 300 50 VGE = 15V VGE = 15V 13V 11V 45 40 I C - Amperes 35 I C - Amperes 250 13V 200 11V 9V 30 7V 25 20 15 150 9V 100 7V 10 50 5 5V 5V 0 0 0.5 1 1.5 2 2.5 0 3 2 4 6 12 14 16 18 1.3 50 VGE = 15V 13V 11V 40 35 7V 30 I C = 48A 1.2 9V V C E (sat)- Normalized 45 25 20 15 V GE = 15V 1.1 1.0 I C = 24A 0.9 5V 10 0.8 5 I C = 12A 0.7 0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 50 75 100 125 150 12 13 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 250 4.2 TJ = 25ºC 3.9 225 TJ = -40ºC 25ºC 125ºC 200 3.6 3.3 I C = 48A 24A 12A 3 2.7 I C - Amperes VC E - Volts 10 Fig. 4. Dependence of V CE(sat) on Tem perature Fig. 3. Output Characteristics @ 125 Deg. C I C - Amperes 8 V C E - Volts V C E - Volts 2.4 175 150 125 100 2.1 75 1.8 50 1.5 25 1.2 0 5 6 7 8 9 10 11 12 13 14 15 16 17 V G E - Volts © 2004 IXYS All rights reserved 4 5 6 7 8 9 V G E - Volts 10 11 IXGH 30N60B2D1 IXGT 30N60B2D1 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 45 2.7 TJ = -40ºC 25ºC 125ºC 40 2.1 E off - milliJoules g f s - Siemens 35 2.4 30 25 20 15 1.8 TJ = 125ºC VGE = 15V VCE = 400V 1.5 1.2 0.9 10 0.6 5 0.3 0 I C = 48A I C = 24A I C = 12A 0 0 25 50 75 100 125 150 175 200 225 250 0 10 20 30 I C - Amperes 2 60 70 80 2 R G = 5Ω VGE = 15V VCE = 400V 1.8 1.6 1.6 1.4 1.2 TJ = 125ºC 1 0.8 0.6 TJ = 25ºC 0.4 1.2 1 I C = 24A 0.8 0.6 0.4 0.2 0 0 15 20 25 30 35 40 I C = 48A 1.4 0.2 10 R G = 5Ω VGE = 15V VCE = 400V 1.8 E off - milliJoules E off - MilliJoules 50 Fig. 10. Dependence of Turn-Off Energy on Tem perature Fig. 9. Dependence of Turn-Off Energy on IC 45 50 I C = 12A 25 35 I C - Amperes 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG Fig. 12. Dependence of Turn-Off Sw itching Tim e on IC 260 700 td(off) tfi - - - - - - 600 TJ = 125ºC VGE = 15V VCE = 400V 500 400 I C = 12A 300 I C = 24A 200 td(off) tfi - - - - - - 240 Switching Time - nanosecond Switching Time - nanosecond 40 R G - Ohms I C = 48A 220 R G = 5Ω VGE = 15V VCE = 400V 200 180 TJ = 125ºC 160 140 120 100 TJ = 25ºC 80 100 60 0 10 20 30 40 50 60 70 80 R G - Ohms 10 15 20 25 30 35 40 45 50 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGH 30N60B2D1 IXGT 30N60B2D1 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 15 200 td(off) tfi - - - - - - 180 R G = 5Ω VGE = 15V VCE = 400V I C = 12A 24A 48A VCE = 300V I C = 24A I G = 10mA 12 VG E - Volts Switching Time - nanosecond 220 160 140 9 6 120 I C = 48A 24A 12A 100 3 80 0 25 35 45 55 65 75 85 95 105 115 125 0 10 20 TJ - Degrees Centigrade 30 40 50 60 70 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 30 35 40 V C E - Volts Fig. 16. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 1.0 0.5 0.1 1 10 100 Pulse Width - milliseconds © 2004 IXYS All rights reserved 1000 IXGH 30N60B2D1 IXGT 30N60B2D1 60 A 1000 50 IF 800 Qr 600 TVJ= 100°C VR = 300V A 25 IF= 60A IF= 30A IF= 15A IRM IF= 60A IF= 30A IF= 15A 40 TVJ=150°C 30 TVJ= 100°C VR = 300V nC 20 30 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 2 5 0 100 3 V 0 A/µs 1000 -diF/dt VF Fig. 17. Forward current IF versus VF Fig. 18. Reverse recovery charge Qr versus -diF/dt 90 2.0 Kf 600 A/µs 800 1000 -diF/dt 400 1.00 TVJ= 100°C IF = 30A V VFR 15 trr 200 Fig. 19. Peak reverse current IRM versus -diF/dt 20 TVJ= 100°C VR = 300V ns 1.5 0 µs tfr 0.75 VFR tfr 80 IF= 60A IF= 30A IF= 15A 1.0 IRM 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. ,II Fig.20. 20.Dynamic Dynamicparameters parametersQQ r r,RM RM versus versusTVJ TVJ Fig. 21. Recovery time trr versus -diF/dt 1 K/W 0.00 600 A/µs 800 1000 diF/dt Fig. 22. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 0.1 ZthJC Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 s 0.1 1 t Fig. 23. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.