IXGH30N60C3D1

IXGH30N60C3D1 IXGT30N60C3D1* GenX3TM 600V IGBTs w/ Diode *Obsolete Part Number High-Speed PT IGBTs for 40-100 kHz Switching VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 IF110 ICM TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms 60 30 30 150 A A A A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 A (RBSOA) Clamped Inductive Load @ ≤ VCES PC TC = 25°C TJ 220 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10 seconds 260 °C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-268 TO-247 4 6 g g E C (Tab) TO-247 (IXGH) G C E G = Gate E = Emitter C (Tab) C = Collector Tab = Collector Features z z z z Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Packages Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 z 5.5 V 75 μA 1 mA ±100 nA TJ = 125°C 2.6 1.8 3.0 V V Applications z z z z z z z z © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100013B(05/11) IXGH30N60C3D1 IXGT30N60C3D1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 20A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS 9 Inductive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 300V, RG = 5Ω Note 2 Inductive load, TJ = 125°C IC = 20A, VGE = 15V VCE = 300V, RG = 5Ω Note 2 TO-247 TO-268 Outline 30 S 915 78 32 pF pF pF 38 8 17 nC nC nC 16 26 0.27 42 47 0.09 ns ns mJ ns ns mJ 75 0.18 17 28 0.44 70 90 0.33 ns ns mJ ns ns mJ 0.21 0.56 °C/W °C/W Terminals: 1 - Gate 3 - Emitter 2,4 - Collector TO-247 Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IF = 30A, VGE = 0V, Note 1 IRM trr IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C VR = 100V TJ = 100°C IF = 1A, -di/dt = 100A/μs, VR = 30V TJ = 150°C 2.7 V V 4 A ns ns 1.6 100 25 RthJC Notes: 1 Characteristic Values Min. Typ. Max. 0.9 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. 2 3 ∅P e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH30N60C3D1 IXGT30N60C3D1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 180 40 VGE = 15V 13V 35 140 30 11V 13V 120 25 IC - Amperes IC - Amperes VGE = 15V 160 20 9V 15 10 100 11V 80 60 9V 40 5 7V 20 0 7V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 2 4 6 8 12 14 16 18 20 Fig. 4. Dependence of VCE(sat) on JunctionTemperature Fig. 3. Output Characteristics @ T J = 125ºC 1.1 40 VGE = 15V 13V 11V 35 VGE = 15V 1.0 I VCE(sat) - Normalized 30 IC - Amperes 10 VCE - Volts VCE - Volts 9V 25 20 15 = 40A 0.9 0.8 I C = 20A 0.7 10 I 0.6 5 C C = 10A 7V 0.5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 25 3.2 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 70 5.5 TJ = 25ºC 60 5.0 50 I 4.0 C IC - Amperes VCE - Volts 4.5 = 40A 20A 10A 40 TJ = 125ºC 25ºC - 40ºC 30 3.5 20 3.0 10 2.5 0 7 8 9 10 11 12 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 13 14 15 5 6 7 8 VGE - Volts 9 10 11 IXGH30N60C3D1 IXGT30N60C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 24 16 TJ = - 40ºC 20 VCE = 300V 12 I G = 10 mA I C = 20A 25ºC 16 VGE - Volts g f s - Siemens 14 125ºC 12 10 8 6 8 4 4 2 0 0 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 40 10,000 60 50 Cies 1,000 IC - Amperes Capacitance - PicoFarads f = 1 MHz Coes 100 40 30 20 TJ = 125ºC 10 Cres 0 100 10 0 5 10 15 20 25 30 35 40 RG = 5Ω dv / dt < 10V / ns 200 300 400 500 600 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGH30N60C3D1 IXGT30N60C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 0.8 Eon - Eoff 0.7 --- TJ = 125ºC , VGE = 15V 1.4 0.6 1.2 0.5 1.0 0.4 1.2 Eoff = 40A 0.8 0.4 0.6 0.3 I C = 20A 0.2 6 8 10 12 14 16 18 E off - MilliJoules C 0.5 0.8 TJ = 125ºC 0.3 0.6 0.2 0.4 0.1 0.2 0 0.4 TJ = 25ºC 15 20 t fi 120 0.8 0.3 0.6 0.2 0.4 t f i - Nanoseconds 0.4 140 100 I C = 40A 120 80 I 100 I C = 20A 45 55 65 75 85 95 105 115 40 4 6 8 10 140 TJ = 125ºC 70 80 60 60 50 40 40 TJ = 25ºC 20 30 0 20 25 30 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 35 40 td(off) - - - - 80 RG = 5Ω , VGE = 15V VCE = 300V t f i - Nanoseconds 80 100 20 20 120 70 100 60 I C = 40A, 20A 80 50 60 40 40 30 20 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 20 125 t d(off) - Nanoseconds VCE = 300V 15 18 90 t fi 90 t d(off) - Nanoseconds t f i - Nanoseconds 100 RG = 5Ω , VGE = 15V 10 16 160 110 td(off) - - - - 120 14 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 180 140 12 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 60 80 0 125 TJ - Degrees Centigrade t fi = 20A 0.2 0 35 C t d(off) - Nanoseconds VCE = 300V 1 I C = 40A td(off) - - - - TJ = 125ºC, VGE = 15V 160 VCE = 300V 25 40 140 1.2 E on - MilliJoules E off - MilliJoules ---- RG = 5Ω , VGE = 15V 0.1 35 180 1.4 0.5 30 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 0.7 Eon 25 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.2 0 10 20 RG - Ohms 0.6 1 E on - MilliJoules I E on - MilliJoules E off - MilliJoules ---- VCE = 300V VCE = 300V 0.6 4 Eon RG = 5Ω , VGE = 15V IXGH30N60C3D1 IXGT30N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 90 t ri 80 td(on) - - - - 70 28 60 t ri 50 VCE = 300V t r i - Nanoseconds 26 VCE = 300V 60 I C 24 = 40A 50 22 40 20 30 I C 10 6 8 10 12 14 16 18 td(on) - - - - 22 RG = 5Ω , VGE = 15V 20 TJ = 125ºC 40 18 TJ = 25ºC 30 16 20 14 16 10 12 14 0 18 = 20A 20 4 t d(on) - Nanoseconds 70 t r i - Nanoseconds TJ = 125ºC, VGE = 15V 24 20 10 10 RG - Ohms t d(on) - Nanoseconds 30 15 20 25 30 35 40 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 75 21 20 I C = 40A 55 19 t ri td(on) - - - - RG = 5Ω , VGE = 15V 45 18 VCE = 300V 35 17 I C = 20A 25 t d(on) - Nanoseconds t r i - Nanoseconds 65 16 15 25 35 45 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_30N60C3(4D)05-02-11-A IXGH30N60C3D1 IXGT30N60C3D1 60 A 1000 nC 50 IF 30 TVJ= 100°C VR = 300V 25 800 Qr IRM 40 30 TVJ=100°C 15 400 20 10 TVJ=25°C 200 10 0 IF= 60A IF= 30A IF= 15A 20 IF= 60A IF= 30A IF= 15A 600 TVJ=150°C TVJ= 100°C VR = 300V A 0 1 0 100 3 V 2 5 A/μs 1000 -diF/dt VF Fig. 22. Reverse recovery charge Qr versus -diF/dt Fig. 21. Forward current IF versus VF 2.0 90 trr 1.5 Kf 200 400 600 A/μs 800 1000 -diF/dt Fig. 23. Peak reverse current IRM versus -diF/dt 1.00 TVJ= 100°C IF = 30A V V FR 15 IF= 60A IF= 30A IF= 15A 80 0 20 TVJ= 100°C VR = 300V ns 0 μs tfr 0.75 tfr VFR 1.0 10 0.50 5 0.25 IRM 70 Qr 0.5 0.0 0 40 80 120 °C 160 60 0 200 T VJ 400 600 800 A/μs 1000 0 0 200 -diF/dt Fig. 24. Dynamic parameters Qr, IRM versus TVJ Fig. 25. Recovery time trr versus -diF/dt 1 K/W 0.00 600 A/μs 800 1000 diF/dt Fig. 26. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 0.1 Z thJC 1 2 3 0.01 0.001 0.00001 400 DSEP 29-06 0.0001 0.001 0.01 Fig. 27. Transient thermal resistance junction to case © 2011 IXYS CORPORATION, All Rights Reserved 0.1 t s 1 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.