IXGH32N100A3

Advance Technical Information GenX3TM 1000V IGBT IXGH32N100A3 IXGT32N100A3 VCES = 1000V = 75A IC25 VCE(sat) ≤ 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions VCES TC = 25°C to 150°C VCGR Maximum Ratings 1000 V TJ = 25°C to 150°C, RGE = 1MΩ 1000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C, IGBT chip capability 75 A IC110 TC = 110°C 32 A ICM TJ ≤ 150°C, tp < 300μs 200 A IAS TC = 25°C 20 A EAS TC = 25°C 120 mJ SSOA VGE = 15V, TVJ = 125°C, RG = 10Ω (RBSOA) Clamped inductive load @ ≤ 0.8 • VCES PC TC = 25°C ICM = 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from case for 10s 300 °C TSOLD Plastic body for 10 seconds 260 °C Md Mounting torque (TO-247 ) 1.13 / 10 Nm/lb.in. Weight TO-247 TO-268 6 5 g g Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. BVCES IC = 250μA, VGE = 0V 1000 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES Typ. IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 32A, VGE = 15V, Note 1 Max. V 5.0 E TO-268 ( IXGT) G C (TAB) E G = Gate E = Emitter C = Collector TAB = Collector Features • International standard packages • Low saturation voltage • Avalanche Rated • MOS gate turn-on - drive simplicity • Epoxy molding meets UL 94V-O Applications • Pulser circuits • Capacitor discharge V 50 μA VCE = VCES VGE = 0V C (TAB) C A 300 TJ G TJ = 125°C 1 mA ±100 nA TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 1.90 2.05 2.2 V V DS99958(02/08) IXGH32N100A3 IXGT32N100A3 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = 32A, VCE = 10V, Note 1 14 TO-247 (IXGH) Outline 20 S 2250 pF 130 pF Cres 48 pF Qg(on) 87 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz 16 nC Qgc 35 nC td(on) 24 ns tri Eon td(off) IC = 32A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 32A, VGE = 15V 51 ns 2.6 mJ 385 700 ns 540 800 ns Eoff 9.5 14 mJ td(on) 52 tfi tri Eon td(off) tfi VCE = 800V, RG = 10Ω Inductive Load, TJ = 125°C IC = 32A, VGE = 15V VCE = 800V, RG = 10Ω Eoff RthCS e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC ns 23 ns 4.2 mJ 400 ns 770 ns 13 mJ RthJC ∅P Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.42 °C/W TO-247 0.21 °C/W TO-268 Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Terminals: 1 - Gate 3 - Emitter 2 - Collector IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.